Faculty Profiles - NG Yee Fai | The Hong Kong University of Science and Technology

Yee Fai NG
吳誼暉

PhD in Surface Physics
The University of Hong Kong, 2002

Lecturer I
Department of Physics

(852) 2358 7473
phyfng@ust.hk
Room 4448
Personal Web

ORCID

0000-0003-4156-1309

Scopus ID

7202471126

Research Interest Publications Teaching Assignment

Research Interest

Science education
Material physics
Nanoscience
Surface physics

Publications

All Years 8 2024 0 2023 0 2022 0 2021 0 2020 0 2019 1 2018 7

2019 1

Pedagogy and Innovation in Science Education: A Case Study of an Experiential Learning Science Undergraduate Course

The European Journal of Social and Behavioural Sciences, v. 25, (2), 3 January 2019, p. 156-173
Ng, Yee Fai; Chan, Kwan Kit; Lei, Huey; Mok, Phoebe; Leung, Shing Yu
Article

2003 2

InN Island shape and its dependence on growth condition of molecular-beam epitaxy

Applied Physics Letters, v. 83, (25), December 2003, p. 5157-5159
Cao, Y. G.; Xie, M. H.; Liu, Y.; Ng, Yee Fai; Wu, H. S.; Tong, S. Y.
Article

Scaling of Three-Dimensional InN Islands Grown on GaN(0001) by Molecular-beam Epitaxy

Physical Review B, v. 68, (16), October 2003, article number 161304
Cao, Y. G.; Xie, M. H.; Liu, Y.; Xu, S. H.; Ng, Yee Fai; Wu, H. S.; Tong, S. Y.
Article

2002 1

Growth Mode and Strain Evolution During InN Growth on GaN(0001) by Molecular-beam Epitaxy

Applied Physics Letters, v. 81, (21), November 2002, p. 3960-3962
Ng, Yee Fai; Cao, Y. G.; Xie, M. H.; Wang, X. L.; Tong, S. Y.
Article

2001 1

InN Heteroepitaxy on GaN—RHEED Intensity Oscillations and Strain Relaxation

Ng, Yee Fai; Xie, M. H.; Tong, S. Y.
Conference paper

2000 3

Reduction of Threading Defects in GaN Grown on Vicinal SiC(0001) by Molecular-beam Epitaxy

Applied Physical Letters, v. 77, (8), August 2000, p. 1105-1107
Xie, M. H.; Zheng, L. X.; Cheung, S. H.; Ng, Yee Fai; Wu, Huasheng; Tong, S. Y; Ohtani, N.
Article

Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

Physical Review B, v. 61, (15), April 2000, p. 9983-9985
Xie, M. H.; Cheung, S. H.; Zheng, L. X.; Ng, Yee Fai; Wu, Huasheng; Ohtani, N.
Article

Surface Morphology of GaN: Flat versus Vicinal Surface

Materials Research Society Internet Journal of Nitride Semiconductor Research, v. 5, (S1), January 2000, p. 174-180
Xie, M. H.; Seutter, S. M.; Zheng, L. X.; Cheung, S. H.; Ng, Yee Fai; Wu, Huasheng; Tong, S. Y.
Article

Article 1

Pedagogy and Innovation in Science Education: A Case Study of an Experiential Learning Science Undergraduate Course

The European Journal of Social and Behavioural Sciences, v. 25, (2), 3 January 2019, p. 156-173
Ng, Yee Fai; Chan, Kwan Kit; Lei, Huey; Mok, Phoebe; Leung, Shing Yu

Article 2

InN Island shape and its dependence on growth condition of molecular-beam epitaxy

Applied Physics Letters, v. 83, (25), December 2003, p. 5157-5159
Cao, Y. G.; Xie, M. H.; Liu, Y.; Ng, Yee Fai; Wu, H. S.; Tong, S. Y.

Scaling of Three-Dimensional InN Islands Grown on GaN(0001) by Molecular-beam Epitaxy

Physical Review B, v. 68, (16), October 2003, article number 161304
Cao, Y. G.; Xie, M. H.; Liu, Y.; Xu, S. H.; Ng, Yee Fai; Wu, H. S.; Tong, S. Y.

Article 1

Growth Mode and Strain Evolution During InN Growth on GaN(0001) by Molecular-beam Epitaxy

Applied Physics Letters, v. 81, (21), November 2002, p. 3960-3962
Ng, Yee Fai; Cao, Y. G.; Xie, M. H.; Wang, X. L.; Tong, S. Y.

Conference paper 1

InN Heteroepitaxy on GaN—RHEED Intensity Oscillations and Strain Relaxation

Ng, Yee Fai; Xie, M. H.; Tong, S. Y.

Article 3

Reduction of Threading Defects in GaN Grown on Vicinal SiC(0001) by Molecular-beam Epitaxy

Applied Physical Letters, v. 77, (8), August 2000, p. 1105-1107
Xie, M. H.; Zheng, L. X.; Cheung, S. H.; Ng, Yee Fai; Wu, Huasheng; Tong, S. Y; Ohtani, N.

Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

Physical Review B, v. 61, (15), April 2000, p. 9983-9985
Xie, M. H.; Cheung, S. H.; Zheng, L. X.; Ng, Yee Fai; Wu, Huasheng; Ohtani, N.

Surface Morphology of GaN: Flat versus Vicinal Surface

Materials Research Society Internet Journal of Nitride Semiconductor Research, v. 5, (S1), January 2000, p. 174-180
Xie, M. H.; Seutter, S. M.; Zheng, L. X.; Cheung, S. H.; Ng, Yee Fai; Wu, Huasheng; Tong, S. Y.

2003 2

InN Island shape and its dependence on growth condition of molecular-beam epitaxy

Applied Physics Letters, v. 83, (25), December 2003, p. 5157-5159
Cao, Y. G.; Xie, M. H.; Liu, Y.; Ng, Yee Fai; Wu, H. S.; Tong, S. Y.
Article

Scaling of Three-Dimensional InN Islands Grown on GaN(0001) by Molecular-beam Epitaxy

Physical Review B, v. 68, (16), October 2003, article number 161304
Cao, Y. G.; Xie, M. H.; Liu, Y.; Xu, S. H.; Ng, Yee Fai; Wu, H. S.; Tong, S. Y.
Article

2002 1

Growth Mode and Strain Evolution During InN Growth on GaN(0001) by Molecular-beam Epitaxy

Applied Physics Letters, v. 81, (21), November 2002, p. 3960-3962
Ng, Yee Fai; Cao, Y. G.; Xie, M. H.; Wang, X. L.; Tong, S. Y.
Article

2001 1

InN Heteroepitaxy on GaN—RHEED Intensity Oscillations and Strain Relaxation

Ng, Yee Fai; Xie, M. H.; Tong, S. Y.
Conference paper

2000 3

Reduction of Threading Defects in GaN Grown on Vicinal SiC(0001) by Molecular-beam Epitaxy

Applied Physical Letters, v. 77, (8), August 2000, p. 1105-1107
Xie, M. H.; Zheng, L. X.; Cheung, S. H.; Ng, Yee Fai; Wu, Huasheng; Tong, S. Y; Ohtani, N.
Article

Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

Physical Review B, v. 61, (15), April 2000, p. 9983-9985
Xie, M. H.; Cheung, S. H.; Zheng, L. X.; Ng, Yee Fai; Wu, Huasheng; Ohtani, N.
Article

Surface Morphology of GaN: Flat versus Vicinal Surface

Materials Research Society Internet Journal of Nitride Semiconductor Research, v. 5, (S1), January 2000, p. 174-180
Xie, M. H.; Seutter, S. M.; Zheng, L. X.; Cheung, S. H.; Ng, Yee Fai; Wu, Huasheng; Tong, S. Y.
Article

No Publications

Teaching Assignment

2024-25 Fall 2 2023-24 Summer 1 2023-24 Spring 4 2023-24 Winter 0 2023-24 Fall 2 2022-23 Summer 1

PHYS1101	Introductory Physics
PHYS1111	General Physics I

PHYS1115

Laboratory for General Physics II

PHYS1101	Introductory Physics
PHYS1113	Laboratory for General Physics I
PHYS1115	Laboratory for General Physics II
SCIE3110	Teaching Science Using Innovative Teaching Tools

PHYS1101	Introductory Physics
PHYS1111	General Physics I

PHYS1115

Laboratory for General Physics II

No Teaching Assignments

Research Interest

Publications

2019 1

2003 2

2002 1

2001 1

2000 3

Article 1

Article 2

Article 1

Conference paper 1

Article 3

2003 2

2002 1

2001 1

2000 3

Teaching Assignment

Projects

From January 2022 to December 2024

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