Faculty Profiles - ZHANG Weijia | The Hong Kong University of Science and Technology

Weijia ZHANG
張薇葭

PhD in Electrical and Computer Engineering
University of Toronto, 2019

Assistant Professor
Department of Electronic and Computer Engineering

Google Scholar

7OlewaoAAAAJ

Scopus ID

56311486200

Research Interest

Power IC design
Gate driver technique for power switch
Applications of wide-bandgap semiconductor devices
Power module design
Packaging and thermal management
AI-assisted power applications

Publications

2022 1

A Dynamic Gate Driver IC with Automated Pattern Optimization for SiC Power MOSFETs

2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Institute of Electrical and Electronics Engineers Inc., 2022, p. 33-36
Cui, W. T.; Zhang, W. J.; Liang, J. Y.; Nishio, H.; Sumida, H.; Nakajima, H.; Hsieh, Yuan Ta; Tsai, Hann Huei; Juang, Ying Zong; Yeh, Wen Kuan; Ng, W. T.
Conference paper

2021 7

A Smart Gate Driver IC for GaN Power HEMTs with Dynamic Ringing Suppression

IEEE Transactions on Power Electronics, v. 36, (12), p. 14119-14132, article number 9457126
Zhang, Wei Jia; Yu, Jingshu; Cui, Wen Tao; Leng, Yahui; Liang, Jingyuan; Hsieh, Yuan Ta; Tsai, Hann Huei; Juang, Ying Zong; Yeh, Wen Kuan; Ng, Wai Tung
Article

Simulation Study of a p-GaN HEMT with an Integrated Schottky Barrier Diode

IEEE Transactions on Electron Devices, v. 68, (12), p. 6039-6045
Yi, Bo; Wu, Zheng; Cheng, Junji; Huang, Haimeng; Zhang, Weijia; Ng, Wai Tung
Article

A Direct Bond Fabrication Process for Compact GaN Intelligent Power Modules on Liquid Coolers for EV Applications

2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 131-134, article number 9452217
Kim, Namjee; Zhang, Wei Jia; Liang, Jingyuan; Cui, Wen Tao; Catuneanu, Andrei; Birkett, Matthew; Burgers, John G.; Tung Ng, Wai
Conference paper

A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

Proceedings of the International Symposium on Power Semiconductor Devices and ICs / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 67-70, Article number: 9452261
Wang, Mengqi; Zhang, Wei Jia; Liang, Jingyuan; Cui, Wen Tao; Tung Ng, Wai; Nishio, Haruhiko; Sumida, Hitoshi; Nakajima, Hiroyuki
Conference paper

Compact GaN Power Modules with Direct Bonded Liquid-Cooled Heat Exchanger Suitable for EV Applications

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021, p. 123-128
Zhang, W. J.; Liang, J.; Cui, W. T.; Kim, N.; Li, R.; Catuneanu, A.; Birkett, M.; Burgers, J. G.; Ng, W. T.
Conference paper

Practical Limits of Liquid Cooling Electric Vehicle Power Modules

2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 379-382, Article number: 9452221
Catuneanu, Andrei; Burgers, John G.; Fleury, Pascal; Zhang, Wei Jia; Ng, Wai Tung
Conference paper

Slope Sensing for Optimum Dynamic Gate Driving of SiC Power MOSFETs

2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 199-202, Article number: 9452289
Cui, W. T.; Zhang, W. J.; Liang, J.; Wang, M.; Nishio, H.; Sumida, H.; Nakajima, H.; Ng, W. T.
Conference paper

2020 8

A TCAD Study on Lateral Power MOSFET with Dual Conduction Paths and High-k Passivation

IEEE Electron Device Letters, v. 41, (2), February 2020, article number 8946727, p. 260-263
Cheng, Junji; Huang, Haimeng; Yi, Bo; Zhang, Weijia; Ng, Wai Tung
Article

A unified model for vertical doped and polarized superjunction GaN devices

Applied Physics Letters, v. 116, (10), March 2020, article number 102103
Huang, Haimeng; Cheng, Junji; Yi, Bo; Zhang, Weijia; Ng, Wai Tung
Article

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Journal of Electronic Materials, v. 49, (11), p. 6829-6843
Kim, Namjee; Yu, Jingshu; Zhang, Weijia; Li, Rophina; Wang, Mengqi; Ng, Wai Tung
Article

Numerical Solutions for Electric Field Lines and Breakdown Voltages in Superjunction-Like Power Devices

IEEE Transactions on Electron Devices, v. 67, (9), September 2020, article number 9142418, p. 3898-3902
Huang, Haimeng; Hu, Ke; Xu, Wenjia; Xu, Shaodi; Cui, Wentao; Zhang, Weijia; Ng, Wai Tung
Article

A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control

Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2020, p. 102-105, Article number: 9170108
Zhang, Wei Jia; Yu, Jingshu; Leng, Yahui; Cui, Wen Tao; Deng, Gao Qiang; Ng, Wai Tung
Conference paper

An intelligent IGBT gate driver IC with temperature compensated gate side collector current sensing

PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings, VDE VERLAG GMBH, 2020, p. 82-87
Li, Rophina; Wang, Mengqi; Yu, Jingshu; Zhang, Weijia; Ng, Wai Tung; Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Hiroyuki, Nakajima
Conference paper

Smart Gate Driver ICs for GaN Power Transistors

13th IEEE International Conference on ASIC, ASICON 2019 / edited by Ye Fan; Tang Ting-Ao. IEEE Computer Society, 2020, Article number: 8983677
Zhang, Wei Jia; Yu, Jingshu; Tungng, Wai
Conference paper

Thermal management for buck converters using co-packaged gan power HEMTs

PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings, VDE VERLAG GMBH, 2020, p. 190-195
Deng, Gaoqiang; Zhang, Weijia; Liang, Jingyuan; Li, Rophina; Kim, Namjee; Ng, Wai Tung; Luo, Xiaorong; Fu, Fred
Conference paper

2019 4

A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing

IEEE Transactions on Power Electronics, v. 34, (5), May 2019, article number 8440763, p. 4613-4627
Chen, Jingxuan; Zhang, Wei Jia; Shorten, Andrew; Yu, Jingshu; Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Ng, Wai Tung
Article

Novel Low Turn-Off Loss Trench-Gate FS-IGBT with a Hybrid p⁺/n Collector Structure

IEEE Journal of the Electron Devices Society, v. 7, May 2019, article number 8719973, p. 677-681
Ma, Kui; Zhang, Weijia; Ng, Wai Tung
Article

An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Institute of Electrical and Electronics Engineers Inc., 2019, p. 83-86, article number 8757616
Zhang, Wei Jia; Leng, Yahui; Yu, Jingshu; Lu, Yu Shen; Cheng, Chu Yao; Ng, Wai Tung
Conference paper

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Paper presented at 14th international seminar on power semiconductors (ISPS 2018), Prague, Czech Republic
ZHANG, Weijia; Leng, Yahui; Yu, Jingshu; Jiang, Xiaoxue; Cheng, Chu Yao; Ng, Wai Tung
Conference paper

2018 2

A smart gate driver IC for GaN power transistors

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2018, p. 84-87, Article number: 8393608
Yu, Jingshu; Zhang, Wei Jia; Shorten, Andrew; Li, Rophina; Ng, Wai Tung
Conference paper

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings / edited by Tang Ting-Ao; Ye Fan; Jiang Yu-Long. Institute of Electrical and Electronics Engineers Inc., 2018, article number 8564869
Ng, Wai Tung; Yu, Jingshu; Wang, Mengqi; Li, Rophina; Zhang, Weijia
Conference paper

2017 1

An IGBT gate driver IC with collector current sensing

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988913, p. 275-278
Chen, J.; Zhang, W.; Shorten, A.; Yu, J.; Ng, W. T.; Sasaki, M.; Kawashima, T.; Nishio, H.
Conference paper

2014 1

A segmented output stage H-bridge IC with tunable gate driver

26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2014, p. 205-208, Article number: 6856012
Yu, J. S.; Zhang, W. J.; Ng, W. T.
Conference paper

Conference paper 1

A Dynamic Gate Driver IC with Automated Pattern Optimization for SiC Power MOSFETs

2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Institute of Electrical and Electronics Engineers Inc., 2022, p. 33-36
Cui, W. T.; Zhang, W. J.; Liang, J. Y.; Nishio, H.; Sumida, H.; Nakajima, H.; Hsieh, Yuan Ta; Tsai, Hann Huei; Juang, Ying Zong; Yeh, Wen Kuan; Ng, W. T.

Article 2

A Smart Gate Driver IC for GaN Power HEMTs with Dynamic Ringing Suppression

IEEE Transactions on Power Electronics, v. 36, (12), p. 14119-14132, article number 9457126
Zhang, Wei Jia; Yu, Jingshu; Cui, Wen Tao; Leng, Yahui; Liang, Jingyuan; Hsieh, Yuan Ta; Tsai, Hann Huei; Juang, Ying Zong; Yeh, Wen Kuan; Ng, Wai Tung

Simulation Study of a p-GaN HEMT with an Integrated Schottky Barrier Diode

IEEE Transactions on Electron Devices, v. 68, (12), p. 6039-6045
Yi, Bo; Wu, Zheng; Cheng, Junji; Huang, Haimeng; Zhang, Weijia; Ng, Wai Tung

Conference paper 5

A Direct Bond Fabrication Process for Compact GaN Intelligent Power Modules on Liquid Coolers for EV Applications

2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 131-134, article number 9452217
Kim, Namjee; Zhang, Wei Jia; Liang, Jingyuan; Cui, Wen Tao; Catuneanu, Andrei; Birkett, Matthew; Burgers, John G.; Tung Ng, Wai

A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

Proceedings of the International Symposium on Power Semiconductor Devices and ICs / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 67-70, Article number: 9452261
Wang, Mengqi; Zhang, Wei Jia; Liang, Jingyuan; Cui, Wen Tao; Tung Ng, Wai; Nishio, Haruhiko; Sumida, Hitoshi; Nakajima, Hiroyuki

Compact GaN Power Modules with Direct Bonded Liquid-Cooled Heat Exchanger Suitable for EV Applications

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021, p. 123-128
Zhang, W. J.; Liang, J.; Cui, W. T.; Kim, N.; Li, R.; Catuneanu, A.; Birkett, M.; Burgers, J. G.; Ng, W. T.

Practical Limits of Liquid Cooling Electric Vehicle Power Modules

2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 379-382, Article number: 9452221
Catuneanu, Andrei; Burgers, John G.; Fleury, Pascal; Zhang, Wei Jia; Ng, Wai Tung

Slope Sensing for Optimum Dynamic Gate Driving of SiC Power MOSFETs

2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2021, p. 199-202, Article number: 9452289
Cui, W. T.; Zhang, W. J.; Liang, J.; Wang, M.; Nishio, H.; Sumida, H.; Nakajima, H.; Ng, W. T.

Article 4

A TCAD Study on Lateral Power MOSFET with Dual Conduction Paths and High-k Passivation

IEEE Electron Device Letters, v. 41, (2), February 2020, article number 8946727, p. 260-263
Cheng, Junji; Huang, Haimeng; Yi, Bo; Zhang, Weijia; Ng, Wai Tung

A unified model for vertical doped and polarized superjunction GaN devices

Applied Physics Letters, v. 116, (10), March 2020, article number 102103
Huang, Haimeng; Cheng, Junji; Yi, Bo; Zhang, Weijia; Ng, Wai Tung

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Journal of Electronic Materials, v. 49, (11), p. 6829-6843
Kim, Namjee; Yu, Jingshu; Zhang, Weijia; Li, Rophina; Wang, Mengqi; Ng, Wai Tung

Numerical Solutions for Electric Field Lines and Breakdown Voltages in Superjunction-Like Power Devices

IEEE Transactions on Electron Devices, v. 67, (9), September 2020, article number 9142418, p. 3898-3902
Huang, Haimeng; Hu, Ke; Xu, Wenjia; Xu, Shaodi; Cui, Wentao; Zhang, Weijia; Ng, Wai Tung

Conference paper 4

A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control

Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2020, p. 102-105, Article number: 9170108
Zhang, Wei Jia; Yu, Jingshu; Leng, Yahui; Cui, Wen Tao; Deng, Gao Qiang; Ng, Wai Tung

An intelligent IGBT gate driver IC with temperature compensated gate side collector current sensing

PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings, VDE VERLAG GMBH, 2020, p. 82-87
Li, Rophina; Wang, Mengqi; Yu, Jingshu; Zhang, Weijia; Ng, Wai Tung; Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Hiroyuki, Nakajima

Smart Gate Driver ICs for GaN Power Transistors

13th IEEE International Conference on ASIC, ASICON 2019 / edited by Ye Fan; Tang Ting-Ao. IEEE Computer Society, 2020, Article number: 8983677
Zhang, Wei Jia; Yu, Jingshu; Tungng, Wai

Thermal management for buck converters using co-packaged gan power HEMTs

PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings, VDE VERLAG GMBH, 2020, p. 190-195
Deng, Gaoqiang; Zhang, Weijia; Liang, Jingyuan; Li, Rophina; Kim, Namjee; Ng, Wai Tung; Luo, Xiaorong; Fu, Fred

Article 2

A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing

IEEE Transactions on Power Electronics, v. 34, (5), May 2019, article number 8440763, p. 4613-4627
Chen, Jingxuan; Zhang, Wei Jia; Shorten, Andrew; Yu, Jingshu; Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Ng, Wai Tung

Novel Low Turn-Off Loss Trench-Gate FS-IGBT with a Hybrid p⁺/n Collector Structure

IEEE Journal of the Electron Devices Society, v. 7, May 2019, article number 8719973, p. 677-681
Ma, Kui; Zhang, Weijia; Ng, Wai Tung

Conference paper 2

An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Institute of Electrical and Electronics Engineers Inc., 2019, p. 83-86, article number 8757616
Zhang, Wei Jia; Leng, Yahui; Yu, Jingshu; Lu, Yu Shen; Cheng, Chu Yao; Ng, Wai Tung

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Paper presented at 14th international seminar on power semiconductors (ISPS 2018), Prague, Czech Republic
ZHANG, Weijia; Leng, Yahui; Yu, Jingshu; Jiang, Xiaoxue; Cheng, Chu Yao; Ng, Wai Tung

Conference paper 2

A smart gate driver IC for GaN power transistors

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2018, p. 84-87, Article number: 8393608
Yu, Jingshu; Zhang, Wei Jia; Shorten, Andrew; Li, Rophina; Ng, Wai Tung

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings / edited by Tang Ting-Ao; Ye Fan; Jiang Yu-Long. Institute of Electrical and Electronics Engineers Inc., 2018, article number 8564869
Ng, Wai Tung; Yu, Jingshu; Wang, Mengqi; Li, Rophina; Zhang, Weijia

Conference paper 1

An IGBT gate driver IC with collector current sensing

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988913, p. 275-278
Chen, J.; Zhang, W.; Shorten, A.; Yu, J.; Ng, W. T.; Sasaki, M.; Kawashima, T.; Nishio, H.

Conference paper 1

A segmented output stage H-bridge IC with tunable gate driver

26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2014, p. 205-208, Article number: 6856012
Yu, J. S.; Zhang, W. J.; Ng, W. T.

2019 4

A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing

IEEE Transactions on Power Electronics, v. 34, (5), May 2019, article number 8440763, p. 4613-4627
Chen, Jingxuan; Zhang, Wei Jia; Shorten, Andrew; Yu, Jingshu; Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Ng, Wai Tung
Article

Novel Low Turn-Off Loss Trench-Gate FS-IGBT with a Hybrid p⁺/n Collector Structure

IEEE Journal of the Electron Devices Society, v. 7, May 2019, article number 8719973, p. 677-681
Ma, Kui; Zhang, Weijia; Ng, Wai Tung
Article

An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Institute of Electrical and Electronics Engineers Inc., 2019, p. 83-86, article number 8757616
Zhang, Wei Jia; Leng, Yahui; Yu, Jingshu; Lu, Yu Shen; Cheng, Chu Yao; Ng, Wai Tung
Conference paper

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Paper presented at 14th international seminar on power semiconductors (ISPS 2018), Prague, Czech Republic
ZHANG, Weijia; Leng, Yahui; Yu, Jingshu; Jiang, Xiaoxue; Cheng, Chu Yao; Ng, Wai Tung
Conference paper

2018 2

A smart gate driver IC for GaN power transistors

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2018, p. 84-87, Article number: 8393608
Yu, Jingshu; Zhang, Wei Jia; Shorten, Andrew; Li, Rophina; Ng, Wai Tung
Conference paper

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings / edited by Tang Ting-Ao; Ye Fan; Jiang Yu-Long. Institute of Electrical and Electronics Engineers Inc., 2018, article number 8564869
Ng, Wai Tung; Yu, Jingshu; Wang, Mengqi; Li, Rophina; Zhang, Weijia
Conference paper

2017 1

An IGBT gate driver IC with collector current sensing

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988913, p. 275-278
Chen, J.; Zhang, W.; Shorten, A.; Yu, J.; Ng, W. T.; Sasaki, M.; Kawashima, T.; Nishio, H.
Conference paper

2014 1

A segmented output stage H-bridge IC with tunable gate driver

26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 / Institute of Electrical and Electronics Engineers Inc.. Institute of Electrical and Electronics Engineers Inc., 2014, p. 205-208, Article number: 6856012
Yu, J. S.; Zhang, W. J.; Ng, W. T.
Conference paper

No Publications

Research Interest

Publications

2022 1

2021 7

2020 8

2019 4

2018 2

2017 1

2014 1

Conference paper 1

Article 2

Conference paper 5

Article 4

Conference paper 4

Article 2

Conference paper 2

Conference paper 2

Conference paper 1

Conference paper 1

2019 4

2018 2

2017 1

2014 1

Projects

From January 2023 to December 2025

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