Faculty Profiles - ZHU Renqiang | The Hong Kong University of Science and Technology

Renqiang ZHU
朱仁强

PhD in Electronic and Computer Engineering
The Hong Kong University of Science and Technology, 2022

Research Assistant Professor
Division of Emerging Interdisciplinary Areas

(852) 2358 8372
zhurenqiang@ust.hk
Room 1043

Google Scholar

MmMXYa4AAAAJ

ORCID

0000-0002-2456-2855

ResearcherID

GAI-5155-2022

Scopus ID

36009690600

Research Interest Publications Projects

Research Interest

III-Nitride materials and devices

Publications

All Years 30 2026 0 2025 9 2024 7 2023 2 2022 4 2021 5 2020 3

2025 9

Fully-Vertical GaN-on-SiC trench MOSFETs

IEEE Electron Device Letters, v. 46, (2), p. 282-285, article number 10807277
Li, Jialun; Zhu, Renqiang; Ming Wong, Ka; May Lau, Kei
Article

Vertical Al₂O₃/GaN MOS capacitors with PEALD-GaO_x interlayer passivation

Applied Physics Letters, v. 126, (8), article number 081603
Zhu, Renqiang; Lin, Jinpei; Gu, Hong; Chen, Lixuan; Zhang, Bo; Liu, Hezhou; Liu, Xinke
Article

Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Journal of Physics D: Applied Physics, v. 58, (10), article number 105103
Zhu, Renqiang; Li, Bo; Li, Shuai; Ma, Zhengweng; Yang, Huakai; He, Shijie; Huang, Shuangwu; Xiong, Xinbo; Chiu, Hsien Chin; Li, Xiaohua; Zhang, Bo; Liu, Xinke
Article

3 kV/2.9 mΩ⋯ cm²β-Ga₂O₃ vertical p-n heterojunction diodes with helium-implanted edge termination and oxygen post annealing

Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Institute of Electrical and Electronics Engineers Inc., 2025, p. 357-360article number 11118209
Han, Jiajun; Sun, Na; Pei, Xinyi; Fan, Kangkai; Xu, Yu; Huang, Zihao; Zhu, Renqiang; Huo, Nengjie; Li, Jingbo; Mao, Junfa; Ye, Jiandong; Liu, Xinke
Conference paper

Enhancing key performance of vertical GaN MOS capacitors through GaOx interface technology

Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Institute of Electrical and Electronics Engineers Inc., 2025, p. 337-340article number 11118206
Lin, Jinpei; Pei, Xinyi; Li, Xiaohua; Liu, Haiwen; Zhu, Renqiang; Zhang, Chunfu; Chiu, Hsien Chin; Liang, Jianbo; Liu, Hezhou; Mao, Junfa; Liu, Xinke
Conference paper

Enhancing key performance of vertical p-NiO/n-GaN heterojunction diodes through plasma treatment and oxygen post-annealing

Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Institute of Electrical and Electronics Engineers Inc., 2025, p. 333-336article number 11117458
Huang, Yeying; Wang, Min; Sun, Na; Zhu, Renqiang; Li, Xiaohua; Liang, Jianbo; Ye, Jiandong; Zhang, Chunfu; Liu, Hezhou; Mao, Junfa; Liu, Xinke
Conference paper

Impact of charge trapping on threshold voltage instability in quasi-vertical GaN trench MOSFETs on sapphire

Paper presented at 15th International Conference on Nitride Semiconductors (ICNS-15)
, Malmö, Sweden
Luo, Haowen; ZHU, Renqiang; Fan, Xuancong; LAU, Kei May; JIANG, Huaxing
Conference paper

Investigation of kink effect in quasi-vertical GaN PiN diodes on sapphire

Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA, Institute of Electrical and Electronics Engineers Inc., 2025, p. 241-243article number 10835366
Luo, Haowen; Lin, Han; Zhu, Renqiang; Lau, Kei May; Jiang, Huaxing
Conference paper

Vertical GaN-on-GaN trench MOSFETs with enhanced ON and OFF-state performance

Paper presented at 15th International Conference on Nitride Semiconductors (ICNS-15)
, Malmö, Sweden
Fan, Xuancong; ZHU, Renqiang; Luo, Haowen; LAU, Kei May; JIANG, Huaxing
Conference paper

2024 7

Dynamic reliability assessment of vertical GaN trench MOSFETs with thick bottom dielectric

IEEE Transactions on Device and Materials Reliability, v. 24, (3), p. 358-364, article number 10547004
Zhang, Yu; Zhu, Renqiang; Qu, Haolan; Gu, Yitian; Jiang, Huaxing; Lau, Kei May; Zou, Xinbo
Article

Fully vertical GaN-on-SiC p-i-n Diodes with BFOM of 2.89 GW/cm²

IEEE Journal of the Electron Devices Society, v. 12, p. 318-321, article number 10496446
LI, Jialun; Zhu, Renqiang; WONG, Ka Ming; Lau, Kei May
Article

Study of drain-induced channel effects in vertical GaN junction field-effect transistors

Semiconductor Science and Technology, v. 39, (7), article number 075002
Chen, Zengfa; Yue, Wen; Zhu, Renqiang; Wang, Min; Zhu, Xi; Lin, Jinpei; Huang, Shuangwu; Liu, Xinke
Article

Vertical GaN-on-GaN trench junction barrier schottky diodes with a slanted sidewall

IEEE Journal of the Electron Devices Society, v. 12, p. 34-38
Liu, Xinke; Li, Bo; Wu, Junye; Li, Jian; Yue, Wen; Zhu, Renqiang; Wang, Qi; Li, Xiaohua; Ben, Jianwei; He, Wei; Chiu, Hsien Chin; Xu, Ke; Zhong, Ze
Article

Enhancing key performance of vertical GaN schottky barrier diodes through AlO_xinsertion and dual ion co-implantation

2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., 2024, p. 252-254article number 10579675
Li, Bo; Ma, Zhengweng; Gao, Linfei; Mao, Junfa; Zhuang, Wenrong; Li, Quanchun; Zhang, Bo; Zhu, Renqiang; Li, Jingbo; Liu, Xinke
Conference paper

Fully-vertical GaN-on-SiC trench MOSFETs enabled by conductive AlGaN buffer

Paper presented at 2024 Compound Semiconductor Week (CSW), Lund, Sweden
LI, Jialun; ZHU, Renqiang; HE, Yuanzhi; WONG, Ka Ming; LAU, Kei May
Conference paper

GaN-on-Si vertical MOSFETs with enhanced channel conductivity

Paper presented at 12th International Workshop on Nitride Semiconductors, Honolulu, United States
HE, Yuanzhi; ZHU, Renqiang; LI, Jialun; LAU, Kei May
Conference paper

2023 2

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Applied Physics Letters, v. 123, (21), article number 213505
Wu, Junye; Liao, Zeliang; Wang, Haofan; Zou, Ping; Zhu, Renqiang; Cai, Weixiong; Zhuang, Wenrong; Tu, Yudi; Chen, Shaojun; Xiong, Xinbo; Chiu, Hsien Chin; Li, Xiaohua; Liu, Xinke
Article

Minimal ON-resistance degradation in quasi-vertical GaN trench MOSFETs on Si with gate pulsed bias at elevated temperature

Paper presented at Compound Semiconductor Week 2023 (CSW), Jeju, Korea, Republic of
Fan, Xuancong; JIANG, Huaxing; ZHU, Renqiang; LAU, Kei May
Conference paper

2022 4

Enhancing ON-and OFF-state performance of quasi-vertical GaN trench MOSFETs on sapphire with reduced interface charges and a thick bottom dielectric

IEEE Electron Device Letters, v. 43, (3), p. 346-349, article number 9691320
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May
Article

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Applied Physics Express, v. 15, (12), article number 121004
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May
Article

Vertical GaN trench MOSFETs with step-graded channel doping

Applied Physics Letters, v. 120, (24), article number 242104
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May
Article

High-performance GaN vertical trench MOSFETs grown on Si substrate

2022 Compound Semiconductor Week, CSW 2022, Institute of Electrical and Electronics Engineers Inc., 2022, article number 9930472
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May
Conference paper

2021 5

1300 V normally-OFF p-GaN gate HEMTs on Si with high ON-state drain current

IEEE Transactions on Electron Devices, v. 68, (2), p. 653-657, article number 9303380
JIANG, Huaxing; LYU, Qifeng; Zhu, Renqiang; Xiang, Peng; Cheng, Kai; Lau, Kei May
Article

Effects of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs

IEEE Electron Device Letters, v. 42, (7), p. 970-973, article number 9431174
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Article

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Semiconductor Science and Technology, v. 36, (3), article number 034001
JIANG, Huaxing; Zhu, Renqiang; LYU, Qifeng; TANG, Chak Wah; Lau, Kei May
Article

High-performance GaN trench gate MOSFETs

Paper presented at Lester Eastman Conference on High Performance Devices (LEC 2021)
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Conference paper

Improved design space between ON-resistance, ON-current and Vth in GaN vertical trench MOSFETs with two-step doped channel

Paper presented at Compound Semiconductor Week 2021 (CSW), Stockholm, Sweden
ZHU, Renqiang; JIANG, Huaxing; TANG, Chak Wah; LAU, Kei May
Conference paper

2019 2

High-voltage p-GaN HEMTs with OFF-state blocking capability after gate breakdown

IEEE Electron Device Letters, v. 40, (4), p. 530-533, article number 8635538
JIANG, Huaxing; Zhu, Renqiang; LYU, Qifeng; Lau, Kei May
Article

High-voltage low-ON-resistance p-GaN gate HEMTs on Si with suppressed current collapse operations up to 1000 V

Paper presented at 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, United States
JIANG, Huaxing; ZHU, Renqiang; LYU, Qifeng; XIANG, Peng; CHENG, Kai; LAU, Kei May
Conference paper

2018 1

Large-V_th, low-gate-current p-GaN HEMTs with a TiW gate metal

Paper presented at International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
ZHU, Renqiang; JIANG, Huaxing; LAU, Kei May
Conference paper

Article 3

Fully-Vertical GaN-on-SiC trench MOSFETs

IEEE Electron Device Letters, v. 46, (2), p. 282-285, article number 10807277
Li, Jialun; Zhu, Renqiang; Ming Wong, Ka; May Lau, Kei

Vertical Al₂O₃/GaN MOS capacitors with PEALD-GaO_x interlayer passivation

Applied Physics Letters, v. 126, (8), article number 081603
Zhu, Renqiang; Lin, Jinpei; Gu, Hong; Chen, Lixuan; Zhang, Bo; Liu, Hezhou; Liu, Xinke

Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Journal of Physics D: Applied Physics, v. 58, (10), article number 105103
Zhu, Renqiang; Li, Bo; Li, Shuai; Ma, Zhengweng; Yang, Huakai; He, Shijie; Huang, Shuangwu; Xiong, Xinbo; Chiu, Hsien Chin; Li, Xiaohua; Zhang, Bo; Liu, Xinke

Conference paper 6

3 kV/2.9 mΩ⋯ cm²β-Ga₂O₃ vertical p-n heterojunction diodes with helium-implanted edge termination and oxygen post annealing

Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Institute of Electrical and Electronics Engineers Inc., 2025, p. 357-360article number 11118209
Han, Jiajun; Sun, Na; Pei, Xinyi; Fan, Kangkai; Xu, Yu; Huang, Zihao; Zhu, Renqiang; Huo, Nengjie; Li, Jingbo; Mao, Junfa; Ye, Jiandong; Liu, Xinke

Enhancing key performance of vertical GaN MOS capacitors through GaOx interface technology

Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Institute of Electrical and Electronics Engineers Inc., 2025, p. 337-340article number 11118206
Lin, Jinpei; Pei, Xinyi; Li, Xiaohua; Liu, Haiwen; Zhu, Renqiang; Zhang, Chunfu; Chiu, Hsien Chin; Liang, Jianbo; Liu, Hezhou; Mao, Junfa; Liu, Xinke

Enhancing key performance of vertical p-NiO/n-GaN heterojunction diodes through plasma treatment and oxygen post-annealing

Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Institute of Electrical and Electronics Engineers Inc., 2025, p. 333-336article number 11117458
Huang, Yeying; Wang, Min; Sun, Na; Zhu, Renqiang; Li, Xiaohua; Liang, Jianbo; Ye, Jiandong; Zhang, Chunfu; Liu, Hezhou; Mao, Junfa; Liu, Xinke

Impact of charge trapping on threshold voltage instability in quasi-vertical GaN trench MOSFETs on sapphire

Paper presented at 15th International Conference on Nitride Semiconductors (ICNS-15)
, Malmö, Sweden
Luo, Haowen; ZHU, Renqiang; Fan, Xuancong; LAU, Kei May; JIANG, Huaxing

Investigation of kink effect in quasi-vertical GaN PiN diodes on sapphire

Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA, Institute of Electrical and Electronics Engineers Inc., 2025, p. 241-243article number 10835366
Luo, Haowen; Lin, Han; Zhu, Renqiang; Lau, Kei May; Jiang, Huaxing

Vertical GaN-on-GaN trench MOSFETs with enhanced ON and OFF-state performance

Paper presented at 15th International Conference on Nitride Semiconductors (ICNS-15)
, Malmö, Sweden
Fan, Xuancong; ZHU, Renqiang; Luo, Haowen; LAU, Kei May; JIANG, Huaxing

Article 4

Dynamic reliability assessment of vertical GaN trench MOSFETs with thick bottom dielectric

IEEE Transactions on Device and Materials Reliability, v. 24, (3), p. 358-364, article number 10547004
Zhang, Yu; Zhu, Renqiang; Qu, Haolan; Gu, Yitian; Jiang, Huaxing; Lau, Kei May; Zou, Xinbo

Fully vertical GaN-on-SiC p-i-n Diodes with BFOM of 2.89 GW/cm²

IEEE Journal of the Electron Devices Society, v. 12, p. 318-321, article number 10496446
LI, Jialun; Zhu, Renqiang; WONG, Ka Ming; Lau, Kei May

Study of drain-induced channel effects in vertical GaN junction field-effect transistors

Semiconductor Science and Technology, v. 39, (7), article number 075002
Chen, Zengfa; Yue, Wen; Zhu, Renqiang; Wang, Min; Zhu, Xi; Lin, Jinpei; Huang, Shuangwu; Liu, Xinke

Vertical GaN-on-GaN trench junction barrier schottky diodes with a slanted sidewall

IEEE Journal of the Electron Devices Society, v. 12, p. 34-38
Liu, Xinke; Li, Bo; Wu, Junye; Li, Jian; Yue, Wen; Zhu, Renqiang; Wang, Qi; Li, Xiaohua; Ben, Jianwei; He, Wei; Chiu, Hsien Chin; Xu, Ke; Zhong, Ze

Conference paper 3

Enhancing key performance of vertical GaN schottky barrier diodes through AlO_xinsertion and dual ion co-implantation

2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., 2024, p. 252-254article number 10579675
Li, Bo; Ma, Zhengweng; Gao, Linfei; Mao, Junfa; Zhuang, Wenrong; Li, Quanchun; Zhang, Bo; Zhu, Renqiang; Li, Jingbo; Liu, Xinke

Fully-vertical GaN-on-SiC trench MOSFETs enabled by conductive AlGaN buffer

Paper presented at 2024 Compound Semiconductor Week (CSW), Lund, Sweden
LI, Jialun; ZHU, Renqiang; HE, Yuanzhi; WONG, Ka Ming; LAU, Kei May

GaN-on-Si vertical MOSFETs with enhanced channel conductivity

Paper presented at 12th International Workshop on Nitride Semiconductors, Honolulu, United States
HE, Yuanzhi; ZHU, Renqiang; LI, Jialun; LAU, Kei May

Article 1

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Applied Physics Letters, v. 123, (21), article number 213505
Wu, Junye; Liao, Zeliang; Wang, Haofan; Zou, Ping; Zhu, Renqiang; Cai, Weixiong; Zhuang, Wenrong; Tu, Yudi; Chen, Shaojun; Xiong, Xinbo; Chiu, Hsien Chin; Li, Xiaohua; Liu, Xinke

Conference paper 1

Minimal ON-resistance degradation in quasi-vertical GaN trench MOSFETs on Si with gate pulsed bias at elevated temperature

Paper presented at Compound Semiconductor Week 2023 (CSW), Jeju, Korea, Republic of
Fan, Xuancong; JIANG, Huaxing; ZHU, Renqiang; LAU, Kei May

Article 3

Enhancing ON-and OFF-state performance of quasi-vertical GaN trench MOSFETs on sapphire with reduced interface charges and a thick bottom dielectric

IEEE Electron Device Letters, v. 43, (3), p. 346-349, article number 9691320
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Applied Physics Express, v. 15, (12), article number 121004
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May

Vertical GaN trench MOSFETs with step-graded channel doping

Applied Physics Letters, v. 120, (24), article number 242104
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May

Conference paper 1

High-performance GaN vertical trench MOSFETs grown on Si substrate

2022 Compound Semiconductor Week, CSW 2022, Institute of Electrical and Electronics Engineers Inc., 2022, article number 9930472
Zhu, Renqiang; JIANG, Huaxing; TANG, Chak Wah; Lau, Kei May

Article 3

1300 V normally-OFF p-GaN gate HEMTs on Si with high ON-state drain current

IEEE Transactions on Electron Devices, v. 68, (2), p. 653-657, article number 9303380
JIANG, Huaxing; LYU, Qifeng; Zhu, Renqiang; Xiang, Peng; Cheng, Kai; Lau, Kei May

Effects of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs

IEEE Electron Device Letters, v. 42, (7), p. 970-973, article number 9431174
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Semiconductor Science and Technology, v. 36, (3), article number 034001
JIANG, Huaxing; Zhu, Renqiang; LYU, Qifeng; TANG, Chak Wah; Lau, Kei May

Conference paper 2

High-performance GaN trench gate MOSFETs

Paper presented at Lester Eastman Conference on High Performance Devices (LEC 2021)
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Improved design space between ON-resistance, ON-current and Vth in GaN vertical trench MOSFETs with two-step doped channel

Paper presented at Compound Semiconductor Week 2021 (CSW), Stockholm, Sweden
ZHU, Renqiang; JIANG, Huaxing; TANG, Chak Wah; LAU, Kei May

Article 1

High-voltage p-GaN HEMTs with OFF-state blocking capability after gate breakdown

IEEE Electron Device Letters, v. 40, (4), p. 530-533, article number 8635538
JIANG, Huaxing; Zhu, Renqiang; LYU, Qifeng; Lau, Kei May

Conference paper 1

High-voltage low-ON-resistance p-GaN gate HEMTs on Si with suppressed current collapse operations up to 1000 V

Paper presented at 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, United States
JIANG, Huaxing; ZHU, Renqiang; LYU, Qifeng; XIANG, Peng; CHENG, Kai; LAU, Kei May

Conference paper 1

Large-V_th, low-gate-current p-GaN HEMTs with a TiW gate metal

Paper presented at International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
ZHU, Renqiang; JIANG, Huaxing; LAU, Kei May

2019 2

High-voltage p-GaN HEMTs with OFF-state blocking capability after gate breakdown

IEEE Electron Device Letters, v. 40, (4), p. 530-533, article number 8635538
JIANG, Huaxing; Zhu, Renqiang; LYU, Qifeng; Lau, Kei May
Article

High-voltage low-ON-resistance p-GaN gate HEMTs on Si with suppressed current collapse operations up to 1000 V

Paper presented at 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, United States
JIANG, Huaxing; ZHU, Renqiang; LYU, Qifeng; XIANG, Peng; CHENG, Kai; LAU, Kei May
Conference paper

2018 1

Large-V_th, low-gate-current p-GaN HEMTs with a TiW gate metal

Paper presented at International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
ZHU, Renqiang; JIANG, Huaxing; LAU, Kei May
Conference paper

No Publications

Projects

From January 2024 to December 2026

All Projects 1

No Projects.
1200 V High Reliability GaN Vertical MOSFETs for High Power Applications

面向大功率應用的1200 V 高可靠性氮化鎵垂直MOSFETs Participating

Enkris Semiconductor Hong Kong Limited, Innovation and Technology Fund, Jiangsu Crossing Photoelectric Technology Co., Ltd.
Project Team (HKUST)
LAU Kei May (Lead)

ZHU Renqiang
2025 -

Research Interest

Publications

2025 9

2024 7

2023 2

2022 4

2021 5

2019 2

2018 1

Article 3

Conference paper 6

Article 4

Conference paper 3

Article 1

Conference paper 1

Article 3

Conference paper 1

Article 3

Conference paper 2

Article 1

Conference paper 1

Conference paper 1

2019 2

2018 1

Projects

From January 2024 to December 2026

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