Faculty Profiles - ZHU Renqiang | The Hong Kong University of Science and Technology

Renqiang ZHU
朱仁强

PhD in Electronic and Computer Engineering
The Hong Kong University of Science and Technology, 2022

Research Assistant Professor
Division of Emerging Interdisciplinary Areas

(852) 2358 8372
zhurenqiang@ust.hk
Room 1043

Google Scholar

MmMXYa4AAAAJ

ORCID

0000-0002-2456-2855

ResearcherID

GAI-5155-2022

Scopus ID

36009690600

Research Interest Publications

Research Interest

III-Nitride materials and devices

Publications

All Years 14 2025 1 2024 4 2023 0 2022 4 2021 4 2020 0 2019 1

2025 1

Fully-Vertical GaN-on-SiC Trench MOSFETs

IEEE Electron Device Letters, v. 46, (2), February 2025, article number 10807277, p. 282-285
Li, Jialun; Zhu, Renqiang; Wong, Ka Ming; Lau, Kei May
Article

2024 4

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric

IEEE Transactions on Device and Materials Reliability, v. 24, (3), September 2024, article number 10547004, p. 358-364
Zhang, Yu; Zhu, Renqiang; Qu, Haolan; Gu, Yitian; Jiang, Huaxing; Lau, Kei May; Zou, Xinbo
Article

Efficient Second-Harmonic Generation with Weak Polarization Sensitivity in Gallium Nitride Metasurfaces via Bound States in the Continuum

Advanced Optical Materials, June 2024, article number 2400815
Fan, Kezhou; Chen, Haohan; Sergeev, Aleksandr; Xing, Zengshan; Zhu, Renqiang; Lau, Kei May; Wu, Lijun; Wong, Kam Sing
Article

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm²

IEEE Journal of the Electron Devices Society, v. 12, April 2024, article number 10496446, p. 318-321
Li, Jialun; Zhu, Renqiang; Wong, Ka Ming; Lau, Kei May
Article

GaN-on-Si Vertical Trench MOSFETs with Low RON.sp and High Vth by Enhanced Channel Conductivity

He, Yuanzhi; Zhu, Renqiang; Li, Jialun; Lau, Kei May
Conference paper

2022 4

Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire with Reduced Interface Charges and a Thick Bottom Dielectric

IEEE Electron Device Letters, v. 43, (3), March 2022, article number 9691320, p. 346-349
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Article

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Applied Physics Express, v. 15, (12), November 2022, article number 121004
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Article

Vertical GaN trench MOSFETs with step-graded channel doping

Applied Physics Letters, v. 120, (24), June 2022, article number 242104
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Article

High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

2022 Compound Semiconductor Week, CSW 2022, 2022, article number 9930472
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Conference paper

2021 4

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE Transactions on Electron Devices, v. 68, (2), February 2021, article number 9303380, p. 653-657
Jiang, Huaxing; Lyu, Qifeng; Zhu, Renqiang; Xiang, Peng; Cheng, Kai; Lau, Kei May
Article

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9431174, p. 970-973
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Article

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Semiconductor Science and Technology, v. 36, (3), March 2021, article number 034001
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Tang, Chak Wah; Lau, Kei May
Article

High-performance GaN trench gate MOSFETs

Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Conference paper

2019 1

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8635538, p. 530-533
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Lau, Kei May
Article

Article 1

Fully-Vertical GaN-on-SiC Trench MOSFETs

IEEE Electron Device Letters, v. 46, (2), February 2025, article number 10807277, p. 282-285
Li, Jialun; Zhu, Renqiang; Wong, Ka Ming; Lau, Kei May

Article 3

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric

IEEE Transactions on Device and Materials Reliability, v. 24, (3), September 2024, article number 10547004, p. 358-364
Zhang, Yu; Zhu, Renqiang; Qu, Haolan; Gu, Yitian; Jiang, Huaxing; Lau, Kei May; Zou, Xinbo

Efficient Second-Harmonic Generation with Weak Polarization Sensitivity in Gallium Nitride Metasurfaces via Bound States in the Continuum

Advanced Optical Materials, June 2024, article number 2400815
Fan, Kezhou; Chen, Haohan; Sergeev, Aleksandr; Xing, Zengshan; Zhu, Renqiang; Lau, Kei May; Wu, Lijun; Wong, Kam Sing

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm²

IEEE Journal of the Electron Devices Society, v. 12, April 2024, article number 10496446, p. 318-321
Li, Jialun; Zhu, Renqiang; Wong, Ka Ming; Lau, Kei May

Conference paper 1

GaN-on-Si Vertical Trench MOSFETs with Low RON.sp and High Vth by Enhanced Channel Conductivity

He, Yuanzhi; Zhu, Renqiang; Li, Jialun; Lau, Kei May

Article 3

Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire with Reduced Interface Charges and a Thick Bottom Dielectric

IEEE Electron Device Letters, v. 43, (3), March 2022, article number 9691320, p. 346-349
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Applied Physics Express, v. 15, (12), November 2022, article number 121004
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Vertical GaN trench MOSFETs with step-graded channel doping

Applied Physics Letters, v. 120, (24), June 2022, article number 242104
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Conference paper 1

High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

2022 Compound Semiconductor Week, CSW 2022, 2022, article number 9930472
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Article 3

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE Transactions on Electron Devices, v. 68, (2), February 2021, article number 9303380, p. 653-657
Jiang, Huaxing; Lyu, Qifeng; Zhu, Renqiang; Xiang, Peng; Cheng, Kai; Lau, Kei May

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9431174, p. 970-973
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Semiconductor Science and Technology, v. 36, (3), March 2021, article number 034001
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Tang, Chak Wah; Lau, Kei May

Conference paper 1

High-performance GaN trench gate MOSFETs

Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May

Article 1

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8635538, p. 530-533
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Lau, Kei May

2019 1

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8635538, p. 530-533
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Lau, Kei May
Article

No Publications

Research Interest

Publications

2025 1

2024 4

2022 4

2021 4

2019 1

Article 1

Article 3

Conference paper 1

Article 3

Conference paper 1

Article 3

Conference paper 1

Article 1

2019 1

Projects

From January 2023 to December 2025

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