Beta-gallium oxide material and device technologies

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p-GaN Junction Termination Extension and Experimental Demonstration of Selective p-Doping by Implantation

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

Vertical β-Ga₂O₃ Power Transistors: Fundamentals, Designs, and Opportunities

1-kV β-Ga₂O₃ UMOSFET with quasi-inversion nitrogen-ion-implanted channel

A New Approach for β-Ga₂O₃ Normally-Off Power Transistors

A Schottky source approach for normally-Off β-Ga₂O₃ transistors

Mechanical Stress-Induced Recoverable and Unrecoverable Deteriorations of Flexible a-InGaZnO Thin-Film Transistor

Switching losses and their mitigation in lateral Ga₂O₃ power MOSFETs with high-permittivity dielectric passivation

What is in store for gallium oxide power devices in the next decade?

A landscape of β-Ga₂O₃ Schottky power diodes

Atomic scale defect formation and phase transformation in Si implanted β-Ga₂O₃

Atomic scale mechanism of β to γ phase transformation in gallium oxide

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

High Breakdown Voltage β-Ga₂O₃ Schottky Diodes

A Decade of Advances in Lateral and Vertical β-Ga₂O₃ Power MOSFETs

A review and outlook of Ga₂O₃ transistor technologies

Atomic-level insights into the radiation damage and recovery of β-Ga₂O₃ for high-performance semiconductors

Deep Acceptor Characterization in β-Ga₂O₃ Using Deep Level Optical Spectroscopy Methods

Observation of Fundamental Spatial Limits of Light Localization

Physics-based small-signal model of Ga₂O₃ hot-electron transistor

The Diverse Landscape of Gallium Oxide Power Electronics

Investigation of a defect in the β-Ga₂O₃ substrate material from capacitance transients

Investigation of electric field effect on defects in GaAsN by admittance spectroscopy

Advanced defect characterization in β-Ga₂O₃ without the Arrhenius plot

Atomic scale investigation of point and extended defects in ion implanted β-Ga₂O₃

Atomic-scale investigation of point and extended defects in ion-implanted β-Ga₂O₃

Characterization of deep acceptors in β-Ga₂O₃ by deep level optical spectroscopy

Design study of enhancement-mode β-(Al_xGa_1–x)₂O₃/Ga₂O₃ HEMT for multi-kV power electronic applications

Dielectric encapsulation for thermal annealing of β-Ga₂O₃

Formation of deeper acceptors by nitrogen implantation in HVPE grown β-Ga₂O₃

Gallium oxide hot electron devices

Quantum transport in Ga₂O₃ ballistic electron devices

What can we do with Ga₂O₃?

Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga₂O₃ MOSFETs

Detection of Subsurface, Nanometer-Scale Crystallographic Defects by Nonlinear Light Scattering and Localization

Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted β-Ga₂O₃ crystals detected by photocurrent measurement

Ultrawide-bandgap semiconductors: An overview

Current status of deep level defects in β-Ga₂O₃

New developments in gallium-oxide-based ultrawide-bandgap devices and materials

Trapping and memory effects in β-Ga₂O₃ MOSFETs

β-Ga₂O₃: Device concepts and advanced processing

Carrier capture kinetics, deep levels, and isolation properties of β-Ga₂O₃ Schottky-barrier diodes damaged by nitrogen implantation

Characterization of trap states in buried nitrogen-implanted β-Ga₂O₃

Enhancement-Mode β-Ga₂O₃ Current Aperture Vertical MOSFETs with N-Ion-Implanted Blocker

Vertical β-Ga₂O₃ Power Transistors: A Review

Field-effect transistors 2: Ga₂O₃ Field-Effect Transistors for Power Switching and Radiation-Hard Electronics

Aperture-limited conduction from acceptor diffusion in current aperture vertical β-Ga₂O₃ MOSFETs

Aperture-limited conduction in vertical β-Ga₂O₃ MOSFETs with nitrogen-implanted current blocking layer

Charge trapping and degradation of Ga₂O₃ isolation structures for power electronics

Effects of nitrogen-ion implantation on responsivity spectra of β-Ga₂O₃ crystals

Effects of nitrogen-ion implantation on responsivity spectra of β-Ga₂O₃ crystals

Fundamentals and process technologies of current aperture vertical Ga₂O₃ MOSFETs

Light scattering and localization by dislocation scattering sites

Nitrogen doping of gallium oxide by ion implantation and its application to vertical transistors

Photocurrent spectra of N-ion-implanted β-Ga₂O₃ crystals

Recent progress in gallium oxide power transistor technologies

Vertical Ga₂O₃ transistors based on ion implantation doping technology

Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process

Current Aperture Vertical β-Ga₂O₃ MOSFETs Fabricated by N- and Si-Ion Implantation Doping

Gallium Oxide Field Effect Transistors-Establishing New Frontiers of Power Switching and Radiation-Hard Electronics

Normally-Off Ga₂O₃ MOSFETs with unintentionally nitrogen-doped channel layer grown by plasma-assisted molecular beam epitaxy

Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs

Stability and degradation of isolation and surface in Ga₂O₃ devices

Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation

Gallium Oxide Field Effect Transistors — Establishing New Frontiers of Power Switching and Radiation-Hard Electronics

N-polar III-nitride transistors

Aperture size engineering of current aperture vertical Ga₂O₃ MOSFETs

Comparison between lateral and vertical Ga₂O₃ isolation structures

Development of vertical Ga₂O₃ power transistors

Dynamic R_ON in β-Ga₂O₃ MOSFET power devices

Enhancement-Mode Current Aperture Vertical GaO MOSFETs

Invited: Process and Characterization of Vertical Ga₂O₃ Transistors

Light localization in disordered medium by scattering dislocation sites

Nitrogen-doped channel β-Ga₂O₃ MOSFET with normally-off operation

Nitrogen-ion implantation doping of Ga₂O₃ and its application to transistors

Normally-off β-Ga₂O₃ MOSFET with nitrogen-doped channel

Optical evolution of dislocation speckle imaging inside and outside of thin films

Recent progress in vertical Ga₂O₃ transistors

Record large signal RF performance for β-Ga₂O₃ MOSFETs

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction

Stability and degradation of isolation and surface in Ga₂O₃ devices

Unintentional incorporation of Si and N atoms in Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Vertical enhancement-mode β-Ga₂O₃ MOSFETs with a current aperture

Vertical Ga₂O₃ MOSFETs fabricated by ion implantation process

Vertical Ga₂O₃ Schottky barrier diodes with a guard ring fabricated by using nitrogen-ion implantation (II)

Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation

Vertical Ga₂O₃ transistors fabricated by ion implantation doping

Vertical triple-ion-implanted β-Ga₂O₃ MOSFETs with nitrogen-doped current blocker

Vertical β-Ga₂O₃ transistors for power switching applications

β-Ga₂O₃ MOSFETs with nitrogen-ion-implanted back-barrier

β-Ga₂O₃ MOSFETs with nitrogen-ion-implanted back-barrier: DC performance and trapping effects

Acceptor doping of β-Ga₂O₃ by Mg and N ion implantations

All-ion-implanted planar-gate current aperture vertical Ga₂O₃ MOSFETs with Mg-doped blocking layer

Pulsed Large Signal RF Performance of Field-Plated Ga₂O₃ MOSFETs

Radiation hardness of β-Ga₂O₃ metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization

Advances in Ga₂O₃ MOSFETs for power switching and beyond

Current aperture vertical Ga₂O₃ MOSFETs with N-ion-implanted current blocking layer

Developments of Ga₂O₃ electronic devices for next-generation power switching

Evaluation of electrical and thermal performance of β-Ga₂O₃ MOSFETs for RF operation

Ga₂O₃ current aperture vertical electron transistors with N-ion-implanted current blocking layer

Ga₂O₃ field-effect transistor technologies: Recent advances and future perspectives

Ga₂O₃ power transistors: The promise, the reality, and future directions

Latest progress in gallium-oxide electronic devices

New developments in GaN-based electronics

Nonlinear optical defect detection

Pulse and large signal RF performance of β-Ga₂O₃ MOSFETs

Recent advances in Ga₂O₃ MOSFET technologies

Recent progress in Ga₂O₃ MOSFETs

Reflections on the state of ultra-wide-bandgap Ga₂O₃ MOSFETs

Simulation of heat extraction from Ga₂O₃ MOSFETs with an integrated SiC heat sink

Thermal characterization of β-Ga₂O₃ MOSFETs

Toward realization of Ga₂O₃ transistors for power electronics applications

Vertical Ga₂O₃ Schottky barrier diodes with a guard ring fabricated by using nitrogen-ion implantation

Vertical Ga₂O₃ Schottky barrier diodes with a guard ring formed by nitrogen-ion implantation

Enhancement-mode Ga₂O₃ MOSFETs with Si-ion-implanted source and drain

Advances in Ga₂O₃ MOSFETs for power and radiation-hard electronics

Application of gallium oxide for high-power electronics

Application of gallium oxide for high-power electronics

Charge trapping processes in Ga₂O₃ Schottky diodes

Current state-of-the-art of gallium oxide power device technology

Design and engineering of Ga₂O₃ MOSFETs for next generation power switches

Design of vertical Ga₂O₃ Schottky barrier diodes with over 3-kV breakdown voltage

Design of vertical Ga₂O₃ Schottky barrier diodes with over 3-kV breakdown voltage

Enhancement-mode Ga₂O₃ MOSFET with Al₂O₃ gate dielectric and Si-ion-implanted source and drain

Enhancement-mode Ga₂O₃ MOSFETs with Si-ion-implanted source and drain

First demonstration of vertical Ga₂O₃ MOSFET: Planar structure with a current aperture

Gallium oxide-based devices for power electronics and emerging applications

Gamma-ray irradiation effects on Ga₂O₃ MOSFETs

Investigation of nitrogen ion implantation for current blocking in vertical Ga₂O₃ transistors

Latest progress in gallium oxide epitaxial growth technologies for power devices

Mg ion implantation technology for vertical Ga₂O₃ power devices

Nitrogen ion implantation technology for vertical Ga₂O₃ power devices

Optical defect detection of semiconductor thin film by sub-micron resolution second harmonic technique

Planar vertical Ga₂O₃ MOSFETs with a current aperture

Progress in Ga₂O₃ metal–oxide–semiconductor field-effect transistor technologies

Pursuing the promise of ultra-wide-bandgap Ga₂O₃ power device technology

Radiation hardness of Ga₂O₃ MOSFETs against gamma-ray irradiation

Simulation of improved thermal performance in Ga₂O₃ power devices with an integrated substrate heat sink

Ultra-wide-bandgap Ga₂O₃ material and electronic device technologies

Ultra-wide-bandgap Ga₂O₃ material and electronic device technologies

Unlocking the potential of Ga₂O₃ MOSFETs for power electronics

Characterization of channel temperature in Ga₂O₃ metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750V

Large conduction band offset at SiO₂/β-Ga₂O₃ heterojunction determined by X-ray photoelectron spectroscopy

Characterization of channel temperature in Ga₂O₃ MOSFETs

Development of Mg-ion implantation technology for Ga₂O₃ vertical power device applications

Effects of post-deposition anneal on SiO₂ films on Ga₂O₃ (010)

Effects of post-deposition anneal on SiO₂ layer on Ga₂O₃ (010)

Effects of post-deposition anneal on SiO₂ layer on Ga₂O₃ (010)

Electrical and thermal properties of field-plated Ga₂O₃ MOSFETs with high breakdown voltage

Engineering Ga₂O₃ for high-voltage MOSFETs: transport properties, electrical characterization, and thermal analysis

Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V

Gallium oxide-based devices for power electronics and beyond

High-breakdown depletion-mode Ga₂O₃ MOSFETs with a field plate

Investigation of Mg ion implantation for current blocking in vertical Ga₂O₃ transistors

Investigation of Mg-ion-implanted Ga₂O₃ as current blocking layer in vertical Ga₂O₃ transistors

Measurement of channel temperature in Ga₂O₃ MOSFETs

Mg-ion-implantation technology for vertical Ga₂O₃ power devices

Molecular beam epitaxy growth of Ga₂O₃ thin films on β-Ga₂O₃ (001) substrates

Progress in Ga₂O₃ transistor and diode technologies

Recent advances in gallium oxide device technologies

Status and potential of gallium oxide devices—A new candidate for future power semiconductor electronics

Thick and conductivity-controlled homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy

Ultra-wide bandgap Ga₂O₃ for next-generation power MOSFETs

Anomalous Fe diffusion in Si-ion-implanted β-Ga₂O₃ and its suppression in Ga₂O₃ transistor structures through highly resistive buffer layers

Band alignment at SiO₂/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

Band alignment of Al₂O₃/Ga₂O₃ heterostructures and their application to field-effect transistors

Band alignment of Au/Al₂O₃/Ga₂O₃ MOS structure determined by XPS and tunneling current analysis

Challenge and outlook of gallium oxide power devices

Current Status of Gallium Oxide-Based Power Device Technology

Enhanced Fe diffusion in Si-ion-implanted β-Ga₂O₃ and its suppression in Ga₂O₃ transistor structures through highly-resistive buffer layers

Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V

Ga₂O₃ MOSFETs with a resistive buffer layer for reliable channel doping by ion implantation

Gallium oxide device technology for future power electronics

Gallium oxide devices for the next revolution in power electronics

Large conduction band offset at SiO₂/β-Ga₂O₃ heterojunction determined by x-ray photoelectron spectroscopy

Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

Planar Device Isolation for β-Ga₂O₃ field effect transistors

Progress in research and development on gallium oxide power devices

The challenges of gallium oxide devices for future power electronics

Band alignment and electrical properties of Al₂O₃/β-Ga₂O₃ heterojunctions

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Band alignment of Al₂O₃/β-Ga₂O₃ heterojunctions

Band offset at Al₂O₃/β-Ga₂O₃ heterojunctions

Characterization and suppression of anti-phase-boundary defects in GaAs-on-Si films using SHG and aspect-ratio-trapping

Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation

Depletion-mode gallium oxide MOSFETs

Depletion-mode gallium oxide MOSFETs using Si-ion implantation

Electrical properties of gallium oxide (Ga₂O₃) MOSFETs

Electrically estimated conduction band offset between ALD-Al₂O₃ and β-Ga₂O₃ (-201) using Fowler-Nordheim tunneling current

Electron mobility in β-Ga₂O₃ (010)

Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃

Ga₂O₃ MOSFETs with an n-type channel layer fabricated by Si-ion implantation doping and an Al₂O₃ gate dielectric formed by ALD

Gallium oxide (Ga₂O₃) devices for next generation applications

Investigation of Fe atom diffusion in Ga₂O₃

Monitoring defectivity in III-V/Si heterostructures on patterned Si wafers using high resolution X-ray diffraction

Benchmarking current density in staggered gap In_0.53Ga _0.47As/GaAs_0.5Sb_0.5 heterojunction Esaki tunnel diodes

Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors on β-Ga₂O₃ (010) substrates and temperature dependence of their device characteristics

High-performance N-polar GaN enhancement-mode device technology

Molecular beam epitaxy for high-performance Ga-face GaN electron devices

N-polar GaN epitaxy and high electron mobility transistors

Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN

Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in au-free technology

Al₂O₃/n-Ga₂O₃ MOS diodes

Application of inline X-ray metrology for defect characterization of III-V/Si heterostructures

Characterization of Al₂O₃/n-Ga₂O₃ MOS diodes

Defect metrology of epitaxial Ge on patterned Si wafers using an inline HRXRD tool

Depletion-mode Ga₂O₃ MOSFETs

Depletion-mode Ga₂O₃ MOSFETs on β-Ga₂O₃ (010) substrates with Si-ion-implanted channel and contacts

Gallium oxide (Ga₂O₃) transistors and diodes

High voltage GaN technology in a silicon CMOS environment: Challenges and opportunities

Novel wide bandgap semiconductor Ga₂O₃ transistors

Optimal device architecture and hetero-integration scheme for III-V CMOS

Research and development on Ga₂O₃ power devices

Research and development on Ga₂O₃ transistors and diodes

Structural and electrical properties of Al₂O₃/Ga₂O₃ MOS diode on β-Ga₂O₃ (010)

Wide-bandgap nitride- and oxide-based electronics—Vision, challenges, and opportunities

Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs

Anomalous output conductance in N-polar GaN high electron mobility transistors

Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510-mS/mm g_m, and 0.66-Ω • mm R_on

Integration challenges of III-V materials in advanced CMOS logic

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Atom probe characterization of polar interfaces of Al(Ga)N/GaN heterostructure for device applications

Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm² peak current density to enhance TFET drive current

Challenges of III-V materials in advanced CMOS logic

Characterization of polar AlN/GaN interfaces using atom probe tomography

Correlation between threading dislocation density and sheet resistance of PAMBE-grown AlGaN/GaN heterosturctures

Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

Epitaxial systems engineered for tunnel diodes and tunnel FETs

ETB-QW InAs MOSFET with Scaled Body for Improved Electrostatics

Growth comparison of polar and nonpolar Al_xGa_1-xN/GaN heterostructures using atom probe

Low sheet resistance N-polar GaN high electron mobility transistor structures with strain management for scaled designs

Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors

Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz

Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

RF performance of deep-recessed N-Polar GaN MIS-HEMTs using a selective etch technology without Ex Situ surface passivation

X-band power performance of N-face GaN MIS-HEMTs

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Atom probe study of interfacial abruptness on an N-face GaN high electron mobility transistor structures

Direct correlation between E_c-0.57 eV trap generation and field-induced degradation in AlGaN/GaN high electron mobility transistors

Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors

Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs

Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g_m and 0.76 Ω-mm R_on

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

Polarity inversion of N-face GaN using an aluminum oxide interlayer

100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz

100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz

Deep-recessed N-polar GaN microwave MIS-HEMTs using selective etch technology with a 74% power added efficiency at 4 GHz without ex-situ surface passivation

Dispersion-free AlGaN/GaN CAVET with low R_on achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer

Effects of threading dislocations on the performance of AlGaN/GaN HEMTs grown by PAMBE

Gate/Drain lag effects and an anomalous DC drain conductance in N-face GaN-based MIS-HEMTs

Low on-resistance AlGaN/GaN current aperture vertical electron transistors achieved with MBE regrown channels to suppress Mg diffusion from current blocking layers

N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy

N-polar Gan-based MIS-HEMTS for mixed signal applications

Polarity inversion from N-face to Ga-face in RF plasma MBE of GaN

Polarity inversion of N-face GaN using an aluminum oxide (AlO_x) interlayer

Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth

X-band power performance of MBE-grown N-face GaN MIS-HEMTs

Current-induced spin polarization in gallium nitride

High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

High-performance N-face GaN microwave MIS-HEMTs with > 70% power-added efficiency

Characterization of traps in N-face AlGaN/GaN materials and devices using deep level optical spectroscopy

Effect of AlN nucleation on the heteroepitaxial growth of N-face GaN by molecular beam epitaxy for high electron mobility transistors

High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE

Ultra-low contact resistance for self-aligned HEMT structures on N-polar GaN by MBE regrowth of InGaN-based contact layers

Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF₄-treatment

N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

Current-induced spin polarization in gallium nitride

Gate leakage reduction in AlGaN/GaN HEMTs grown by plasma-assisted MBE

Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Impact of CF₄ plasma treatment on GaN

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures

MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures

N-face high electron mobility transistors with a GaN-spacer

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Impurity incorporation in N-face GaN by plasma-assisted molecular beam epitaxy

Migration enhanced epitaxy of N-polar indium nitride

N-polar GaN electronics

CF₄ plasma treatment toward GaN transistor applications

Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

N-face high electron mobility transistors with a GaN spacer

N-face high electron mobility transistors with a GaN spacer

Growth and electrical characterization of N-face AlGaN/GaN heterostructures

Advanced transistor structures based on N-face GaN

Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs

N-face AlGaN/GaN modulation-doped field effect transistors

Structural and electrical characterization of N-face GaN grown on C-face SiC by MBE

Charge injection in doped organic semiconductors

Contact issues in electroluminescent devices from ruthenium complexes

How to make Ohmic contacts to organic semiconductors

Charge injection in doped organic semiconductors

Charge transport in doped organic semiconductors

Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil

Charge injection in doped organic semiconductors

Charge injection in doped organic semiconductors

Injection and transport in doped organic semiconductors

ITO modification for more efficient hole injection in organic light emitting diodes

Charge injection at the metal/organic interface

Acceptor doping of β-Ga₂O₃ by Mg and N ion implantations

Article

All-ion-implanted planar-gate current aperture vertical Ga₂O₃ MOSFETs with Mg-doped blocking layer

Article

Pulsed Large Signal RF Performance of Field-Plated Ga₂O₃ MOSFETs

Article

Radiation hardness of β-Ga₂O₃ metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

Article

Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization

Article

Advances in Ga₂O₃ MOSFETs for power switching and beyond

Conference paper

Current aperture vertical Ga₂O₃ MOSFETs with N-ion-implanted current blocking layer

Conference paper

Developments of Ga₂O₃ electronic devices for next-generation power switching

Conference paper

Evaluation of electrical and thermal performance of β-Ga₂O₃ MOSFETs for RF operation

Conference paper

Ga₂O₃ current aperture vertical electron transistors with N-ion-implanted current blocking layer

Conference paper

Ga₂O₃ field-effect transistor technologies: Recent advances and future perspectives

Conference paper

Ga₂O₃ power transistors: The promise, the reality, and future directions

Conference paper

Latest progress in gallium-oxide electronic devices

Conference paper

New developments in GaN-based electronics

Conference paper

Nonlinear optical defect detection

Conference paper

Pulse and large signal RF performance of β-Ga₂O₃ MOSFETs

Conference paper

Recent advances in Ga₂O₃ MOSFET technologies

Conference paper

Recent progress in Ga₂O₃ MOSFETs

Conference paper

Reflections on the state of ultra-wide-bandgap Ga₂O₃ MOSFETs

Conference paper

Simulation of heat extraction from Ga₂O₃ MOSFETs with an integrated SiC heat sink

Conference paper

Thermal characterization of β-Ga₂O₃ MOSFETs

Conference paper

Toward realization of Ga₂O₃ transistors for power electronics applications

Conference paper

Vertical Ga₂O₃ Schottky barrier diodes with a guard ring fabricated by using nitrogen-ion implantation

Conference paper

Vertical Ga₂O₃ Schottky barrier diodes with a guard ring formed by nitrogen-ion implantation

Conference paper

Enhancement-mode Ga₂O₃ MOSFETs with Si-ion-implanted source and drain

Article

Advances in Ga₂O₃ MOSFETs for power and radiation-hard electronics

Conference paper

Application of gallium oxide for high-power electronics

Conference paper

Application of gallium oxide for high-power electronics

Conference paper

Charge trapping processes in Ga₂O₃ Schottky diodes

Conference paper

Current state-of-the-art of gallium oxide power device technology

Conference paper

Design and engineering of Ga₂O₃ MOSFETs for next generation power switches

Conference paper

Design of vertical Ga₂O₃ Schottky barrier diodes with over 3-kV breakdown voltage

Conference paper

Design of vertical Ga₂O₃ Schottky barrier diodes with over 3-kV breakdown voltage

Conference paper

Enhancement-mode Ga₂O₃ MOSFET with Al₂O₃ gate dielectric and Si-ion-implanted source and drain

Conference paper

Enhancement-mode Ga₂O₃ MOSFETs with Si-ion-implanted source and drain

Conference paper

First demonstration of vertical Ga₂O₃ MOSFET: Planar structure with a current aperture

Conference paper

Gallium oxide-based devices for power electronics and emerging applications

Conference paper

Gamma-ray irradiation effects on Ga₂O₃ MOSFETs

Conference paper

Investigation of nitrogen ion implantation for current blocking in vertical Ga₂O₃ transistors

Conference paper

Latest progress in gallium oxide epitaxial growth technologies for power devices

Conference paper

Mg ion implantation technology for vertical Ga₂O₃ power devices

Conference paper

Nitrogen ion implantation technology for vertical Ga₂O₃ power devices

Conference paper

Optical defect detection of semiconductor thin film by sub-micron resolution second harmonic technique

Conference paper

Planar vertical Ga₂O₃ MOSFETs with a current aperture

Conference paper

Progress in Ga₂O₃ metal–oxide–semiconductor field-effect transistor technologies

Conference paper

Pursuing the promise of ultra-wide-bandgap Ga₂O₃ power device technology

Conference paper

Radiation hardness of Ga₂O₃ MOSFETs against gamma-ray irradiation

Conference paper

Simulation of improved thermal performance in Ga₂O₃ power devices with an integrated substrate heat sink

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Ultra-wide-bandgap Ga₂O₃ material and electronic device technologies

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Ultra-wide-bandgap Ga₂O₃ material and electronic device technologies

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Unlocking the potential of Ga₂O₃ MOSFETs for power electronics

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Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

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Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750V

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Large conduction band offset at SiO₂/β-Ga₂O₃ heterojunction determined by X-ray photoelectron spectroscopy

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Characterization of channel temperature in Ga₂O₃ MOSFETs

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Development of Mg-ion implantation technology for Ga₂O₃ vertical power device applications

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Effects of post-deposition anneal on SiO₂ films on Ga₂O₃ (010)

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Effects of post-deposition anneal on SiO₂ layer on Ga₂O₃ (010)

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Effects of post-deposition anneal on SiO₂ layer on Ga₂O₃ (010)

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Electrical and thermal properties of field-plated Ga₂O₃ MOSFETs with high breakdown voltage

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Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V

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High-breakdown depletion-mode Ga₂O₃ MOSFETs with a field plate

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Investigation of Mg ion implantation for current blocking in vertical Ga₂O₃ transistors

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Investigation of Mg-ion-implanted Ga₂O₃ as current blocking layer in vertical Ga₂O₃ transistors

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Measurement of channel temperature in Ga₂O₃ MOSFETs

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Mg-ion-implantation technology for vertical Ga₂O₃ power devices

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Molecular beam epitaxy growth of Ga₂O₃ thin films on β-Ga₂O₃ (001) substrates

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Thick and conductivity-controlled homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy

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Ultra-wide bandgap Ga₂O₃ for next-generation power MOSFETs

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Anomalous Fe diffusion in Si-ion-implanted β-Ga₂O₃ and its suppression in Ga₂O₃ transistor structures through highly resistive buffer layers

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Band alignment at SiO₂/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

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Band alignment of Al₂O₃/Ga₂O₃ heterostructures and their application to field-effect transistors

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Band alignment of Au/Al₂O₃/Ga₂O₃ MOS structure determined by XPS and tunneling current analysis

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Challenge and outlook of gallium oxide power devices

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Current Status of Gallium Oxide-Based Power Device Technology

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Enhanced Fe diffusion in Si-ion-implanted β-Ga₂O₃ and its suppression in Ga₂O₃ transistor structures through highly-resistive buffer layers

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Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V

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Ga₂O₃ MOSFETs with a resistive buffer layer for reliable channel doping by ion implantation

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Gallium oxide device technology for future power electronics

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Large conduction band offset at SiO₂/β-Ga₂O₃ heterojunction determined by x-ray photoelectron spectroscopy

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Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

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Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

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Planar Device Isolation for β-Ga₂O₃ field effect transistors

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The challenges of gallium oxide devices for future power electronics

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Band alignment and electrical properties of Al₂O₃/β-Ga₂O₃ heterojunctions

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Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

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Band alignment of Al₂O₃/β-Ga₂O₃ heterojunctions

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Band offset at Al₂O₃/β-Ga₂O₃ heterojunctions

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Characterization and suppression of anti-phase-boundary defects in GaAs-on-Si films using SHG and aspect-ratio-trapping

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Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

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Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation

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Depletion-mode gallium oxide MOSFETs

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Depletion-mode gallium oxide MOSFETs using Si-ion implantation

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Electrical properties of gallium oxide (Ga₂O₃) MOSFETs

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Electrically estimated conduction band offset between ALD-Al₂O₃ and β-Ga₂O₃ (-201) using Fowler-Nordheim tunneling current

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Electron mobility in β-Ga₂O₃ (010)

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Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃

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Ga₂O₃ MOSFETs with an n-type channel layer fabricated by Si-ion implantation doping and an Al₂O₃ gate dielectric formed by ALD

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Investigation of Fe atom diffusion in Ga₂O₃

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Monitoring defectivity in III-V/Si heterostructures on patterned Si wafers using high resolution X-ray diffraction

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Benchmarking current density in staggered gap In_0.53Ga _0.47As/GaAs_0.5Sb_0.5 heterojunction Esaki tunnel diodes

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Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation

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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

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Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors on β-Ga₂O₃ (010) substrates and temperature dependence of their device characteristics

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High-performance N-polar GaN enhancement-mode device technology

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Molecular beam epitaxy for high-performance Ga-face GaN electron devices

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N-polar GaN epitaxy and high electron mobility transistors

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Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN

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Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in au-free technology

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Al₂O₃/n-Ga₂O₃ MOS diodes

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Application of inline X-ray metrology for defect characterization of III-V/Si heterostructures

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Characterization of Al₂O₃/n-Ga₂O₃ MOS diodes

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Defect metrology of epitaxial Ge on patterned Si wafers using an inline HRXRD tool

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Depletion-mode Ga₂O₃ MOSFETs

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Depletion-mode Ga₂O₃ MOSFETs on β-Ga₂O₃ (010) substrates with Si-ion-implanted channel and contacts

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Gallium oxide (Ga₂O₃) transistors and diodes

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Novel wide bandgap semiconductor Ga₂O₃ transistors

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Research and development on Ga₂O₃ transistors and diodes

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Structural and electrical properties of Al₂O₃/Ga₂O₃ MOS diode on β-Ga₂O₃ (010)

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Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs

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Anomalous output conductance in N-polar GaN high electron mobility transistors

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Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

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CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

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Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

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Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

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Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510-mS/mm g_m, and 0.66-Ω • mm R_on

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Integration challenges of III-V materials in advanced CMOS logic

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Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

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Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

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Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

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Atom probe characterization of polar interfaces of Al(Ga)N/GaN heterostructure for device applications

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Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm² peak current density to enhance TFET drive current

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Challenges of III-V materials in advanced CMOS logic

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Characterization of polar AlN/GaN interfaces using atom probe tomography

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Correlation between threading dislocation density and sheet resistance of PAMBE-grown AlGaN/GaN heterosturctures

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Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

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ETB-QW InAs MOSFET with Scaled Body for Improved Electrostatics

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Low sheet resistance N-polar GaN high electron mobility transistor structures with strain management for scaled designs

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Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors

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Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz

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Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth

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Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

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RF performance of deep-recessed N-Polar GaN MIS-HEMTs using a selective etch technology without Ex Situ surface passivation

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X-band power performance of N-face GaN MIS-HEMTs

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Anomalous output conductance in N-polar GaN-based MIS-HEMTs

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Atom probe study of interfacial abruptness on an N-face GaN high electron mobility transistor structures

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Direct correlation between E_c-0.57 eV trap generation and field-induced degradation in AlGaN/GaN high electron mobility transistors

Conference paper

Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors

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Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs

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Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g_m and 0.76 Ω-mm R_on

Conference paper

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

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Polarity inversion of N-face GaN using an aluminum oxide interlayer

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100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz

Conference paper

100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz

Conference paper

Deep-recessed N-polar GaN microwave MIS-HEMTs using selective etch technology with a 74% power added efficiency at 4 GHz without ex-situ surface passivation

Conference paper

Dispersion-free AlGaN/GaN CAVET with low R_on achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer

Conference paper

Effects of threading dislocations on the performance of AlGaN/GaN HEMTs grown by PAMBE

Conference paper

Gate/Drain lag effects and an anomalous DC drain conductance in N-face GaN-based MIS-HEMTs

Conference paper

Low on-resistance AlGaN/GaN current aperture vertical electron transistors achieved with MBE regrown channels to suppress Mg diffusion from current blocking layers

Conference paper

N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy

Conference paper

N-polar Gan-based MIS-HEMTS for mixed signal applications

Conference paper

Polarity inversion from N-face to Ga-face in RF plasma MBE of GaN

Conference paper

Polarity inversion of N-face GaN using an aluminum oxide (AlO_x) interlayer

Conference paper

Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth

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X-band power performance of MBE-grown N-face GaN MIS-HEMTs

Conference paper

Current-induced spin polarization in gallium nitride

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High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

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High-performance N-face GaN microwave MIS-HEMTs with > 70% power-added efficiency

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Characterization of traps in N-face AlGaN/GaN materials and devices using deep level optical spectroscopy

Conference paper

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Conference paper

High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE

Conference paper

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Conference paper

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N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

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Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

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Current-induced spin polarization in gallium nitride

Conference paper

Gate leakage reduction in AlGaN/GaN HEMTs grown by plasma-assisted MBE

Conference paper

Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

Conference paper

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

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Impact of CF₄ plasma treatment on GaN

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Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

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Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures

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MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures

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N-face high electron mobility transistors with a GaN-spacer

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N-polar GaN∕AlGaN∕GaN high electron mobility transistors

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Impurity incorporation in N-face GaN by plasma-assisted molecular beam epitaxy

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Migration enhanced epitaxy of N-polar indium nitride

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N-polar GaN electronics

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CF₄ plasma treatment toward GaN transistor applications

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Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

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N-face high electron mobility transistors with a GaN spacer

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N-face high electron mobility transistors with a GaN spacer

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Growth and electrical characterization of N-face AlGaN/GaN heterostructures

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N-face AlGaN/GaN modulation-doped field effect transistors

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Charge injection in doped organic semiconductors

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Charge injection in doped organic semiconductors

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Charge injection in doped organic semiconductors

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Charge injection in doped organic semiconductors

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