A Dynamic Two-Stage Gate Driver for Unlocking the Fast-Switching Potential of GaN HEMT

Monolithically Integrated GaN Comparator Based on Complementary Logic

Stacked Strongly Coupled GaN/SiC Cascode Device With Fast Switching and Reclaimed Strong dv/dt Control

Suppression of Drain-Bias-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs With Voltage Seatbelt

Unlocking the Full Potential of GaN-SiC Cascode Device With 3D Co-Packaging and Enhanced dv-dt Control Capability

A Gate Driving Scheme for GaN GIT with Enhanced Short Circuit Capability for Motor Drive Application

A Self-Powered Gate Driving Scheme Enabled by the GaN/SiC Cascode Power Device

A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs

Deep Learning-Based Energy-Efficient Spacing Policy and Platooning Control Co-Design for Connected and Automated Vehicles on Inclined Roads

Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test

GaN-based Charge Trapping Memory with an AlN Interfacial Layer for Multi-State Operation

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs With a Low-Voltage GaN HEMT in a Cascode Configuration

Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs

Threshold voltage instability in III-nitride heterostructure metal-insulator-semiconductor high-electron-mobility transistors: Characterization and interface engineering

3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation

A GaN-based Monolithic Bi-Directional Switch with Balanced Performance

A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on Suppression and Gate Reliability Enhancement of SiC MOSFETs

A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor

An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity

Investigation of RF Stability in E-mode p-GaN Gate HEMTs

Monolithically Integrated GaN CMOS Comparator

Reconfigurable Neurotransistors Based on Wide-Bandgap Semiconductors for Adaptive Reservoir Computing

Stacked Strongly Coupled GaN/SiC Cascode Device with Fast Switching and Reclaimed Strong dv/dt Control

Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-SiC

Adaptive Level-Shift Gate Driver with Indirect Gate Oxide Health Monitoring for Suppressing Crosstalk of SiC MOSFETs

An Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT

Endurance Improvement of GaN Bipolar Charge Trapping Memory with Back Gate Injection

Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

GaN Power Integration Technology and Its Future Prospects

Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT

Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates

Static and Dynamic Characteristics of a 1200-V/22 -mΩ Normally-Off SiC/GaN Cascode Device Built With Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode p-GaN Gate Double-Channel HEMTs

Electroluminescence and Gate Carrier Dynamics in a Schottky type p-GaN Gate Double-Channel GaN HEMT

High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

High-Speed and High-Endurance GaN-based Charge Trapping Memory

HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type p-GaN Gate HEMTs

p-GaN/AlGaN/GaN Heterostructure as a Versatile Platform for Extremely-Wide-Temperature-Range (X-WTR) Electronics

Process and Design Techniques for Reliability Enhancement of Lateral GaN HEMTs

Protection of SiC MOSFET from Negative Gate Voltage Spikes with a Low-Voltage GaN HEMT

Pulsed Measurement of Hole Storage Induced Conductivity Enhancement in p-GaN Gate Double Channel HEMT

RF Performances of E-mode p-GaN Gate HEMT on 200mm-Si Substrates for Sub6GHz Applications

Suppressing the Reverse Recovery of Si Super-Junction MOSFET with a Low-Voltage GaN HEMT in a Cascode Configuration

Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation

650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits

GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

Gate Leakage and Reliability of GaN p-Channel FET with SiN_x/GaON Staggered Gate Stack

Gate Reliability of Schottky-Type p-GaN Gate HEMTs under AC Positive Gate Bias Stress with a Switching Drain Bias

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Interfacial band parameters of ultrathin ALD-Al₂O₃, ALD-HfO₂, and PEALD-AlN/ALD-Al₂O₃ on c-plane, Ga-face GaN through XPS measurements

Monolithic Integration of Gate Driver and Protection Modules with p-GaN Gate Power HEMTs

Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs

Normally-OFF p-GaN Gate Double-Channel HEMT with Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

ON-Resistance Analysis of GaN Reverse-Conducting HEMT with Distributive Built-In SBD

Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

Strain release in GaN epitaxy on 4° off-axis 4H-SiC

Substrate and Trench Design for GaN-on-EBUS Power IC Platform

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs

Correlation between Pulse I-V Tests and Human Body Model (HBM) Electrostatic Discharge (ESD) Tests for GaN HEMTs

Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation

Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit

Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors

p-GaN Gate HEMT with Surface Reinforcement for Enhanced Gate Reliability

A Physics-Based Empirical Model of Dynamic I_OFF under Switching Operation in p-GaN Gate Power HEMTs

An ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits

Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching

Characterization of GaON as a Surface Reinforcement Layer of p-GaN in Schottky-type p-GaN Gate HEMTs

Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Network

Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

Dv/Dt-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device

Gallium nitride-based complementary logic integrated circuits

GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation

Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs

OFF-State Drain-Voltage-Stress-Induced V_TH Instability in Schottky-Type p-GaN Gate HEMTs

On the Operating Speed and Energy Efficiency of GaN-based Monolithic Complementary Logic Circuits for Integrated Power Conversion Systems

Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor

RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure

Short Circuit Capability Characterization and Analysis of P-GaN Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Threshold Voltage Instability Of Enhancement-Mode GaN Buried p-Channel MOSFETs

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

A Bootstrap Voltage Clamping Circuit for Dynamic V_TH Characterization in Schottky-Type p-GaN Gate Power HEMT

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Device

Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs

E-mode p-FET-bridge HEMT: Toward high V_TH, low reverse-conduction loss and enhanced stability

Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs

Impact Of OFF-state Gate Bias On Dynamic R_ON of p-GaN Gate HEMT

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs

p-GaN Gate Power Transistor with Distributed Built-in Schottky Barrier Diode for Low-Loss Reverse Conduction

A Normally-_OFF Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Characterization and Analysis of Low-Temperature Time-To-Failure Behavior in Forward-Biased Schottky-Type p-GaN Gate HEMTs

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage

GaN Power IC Technology on p-GaN Gate HEMT Platform

High I_ON and I_ON/I_OFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation

High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations

Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

Investigation of SiN_x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Overcoming the Limitations of Gallium Oxide Through Heterogeneous Integration

Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals

700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

A Novel Ultra-Thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-Temperature Reverse Blocking Characteristic

A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-temperature Power Switching Applications

Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off

Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests

Dv/Dt-control of 1200-V Co-packaged SiC-JFET/GaN-HEMT Cascode Device

Dynamic V_th in p-GaN Gate Power HEMTs and Its Impacts upon Power Switching Circuits

E-mode p-GaN Gate HEMT with p-FET Bridge for Higher V_TH and Enhanced V_TH Stability

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

Enhancement-Mode GaN p-Channel MOSFETs for Power Integration

Gate Reliability and V_TH Stability Investigations of p-GaN HEMTs

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

Planar GaN Power Integration – The World is Flat

Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p -GaN Gate HEMTs

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p -GaN Gate HEMTs

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

Investigation of Dynamic I_OFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs

Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs

Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-in Schottky Barrier Diode

Short Circuit Capability and Short Circuit Induced V_TH Instability of a 1.2kV SiC Power MOSFET

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

Characterization of Dynamic I_OFF in Schottky-Type p-GaN Gate HEMTs

Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode

Development of GaN power Integrated Circuits

DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications

Dynamic Threshold Voltage in p-GaN Gate HEMT

Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Identifying the Location of Hole-Induced Gate Degradation in LPCVD−SiN_x/GaN MIS-FETs under High Reverse-Bias Stress

Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors

Integration on GaN-on-Si p-GaN gate HEMT platform

Investigations of p-shielded SiC trench IGBT with considerations on IE effect, oxide protection and dynamic degradation

Repetitive Short Circuit Energy Dependent V_TH Instability of 1.2kV SiC Power MOSFETs

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaO_xN_{1- x} Channel

Temperature-Dependent Gate Degradation of p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN_x Gate Dielectric

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

Dependence of V_TH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Dynamic OFF-State Current (Dynamic I_OFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact

Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3

High-capacitance-density p -Gan gate capacitors for high-frequency power integration

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study

Interface Engineering of Monolayer MoS₂/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

Layer-dependent Second-order Raman Intensity of MoS₂ and WSe₂: Influence of Intervalley Scattering

Performance and V_TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially-Recessed MIS-HEMTs with LPCVD-SiN_x/PECVD-SiN_x Gate Dielectric Stack

Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Photon Emission and Current-collapse Suppression of AlGaN/GaN Field-effect Transistors with Photonic-ohmic Drain at High Temperatures

Reverse-blocking Normally-OFF GaN Double-channel MOS-HEMT with Low Reverse Leakage Current and Low ON-state Resistance

The 2018 GaN power electronics roadmap

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

V_TH instability of p-GaN gate HEMTs under static and dynamic gate stress

An Interdigitated GaN MIS-HEMT/SBD Normally-off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss

Dynamic OFF-State Leakage Current (I_OFF) in GaN power HEMTs

Dynamic OFF-State Leakage Current (I_OFF) in GaN Power HEMTs

Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs

GaN Power Integrated Circuits

High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer

High-speed, high-reliability GaN power device with integrated gate driver

Modeling the gate driver IC for GaN transistor: A black-box approach

Modification of amorphous-SiNx/GaN interface trap density by nitridation: A first-principles calculation study

Monitoring the Surface Functionalizaion of MoS2 and WSe2 for High-k Integration Using In Situ Resonant Raman Spectroscopy - A First-principle study

Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform

Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric

Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric

Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiN_x/GaN MIS-FETs

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain

SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation

Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

Understanding the Dynamic Behaviro in GaN-on-Si Power Devices and IC’s

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

Enhanced Dielectric Deposition on Single-Layer MoS2 with Low Damage Using Remote N2 Plasma Treatment

GaN-on-Si Power Technology: Devices and Applications

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si₃N₄ as Passivation and Post Gate-Recess Channel Protection Layers

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Normally-Off LPCVD-SiN_x/GaN MIS-FET With Crystalline Oxidation Interlayer

Remote N₂ Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS₂ MOSFET

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

SiC Trench MOSFET with Self-biased p-shield for Low R_ON-SP and Low OFF-state Oxide Field

Trapping Mechanisms in Insulated-Gate GaN Power Devices: Understanding and Characterization Techniques

Fluorine-Implanted Enhancement-Mode Transistors

Recent Progress in GaN-on-Si HEMT

An Analytical Model for False Turn-on Evaluation of GaN Transistor in Bridge-Leg Configuration

Buffer Trapping-induced R_ON Degradation in GaN-on-Si Power Transistors: Role of Electron Injection From Si Substrate

Characterization and analysis of dynamic RON of GaN-on-Si lateral power devices with grounded and floating Si substrate

Charge Storage Effect in SiC Trench MOSFET with a Floating p-shield and its Impact on Dynamic Performances

Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack

Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique

High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer

High-speed Power MOSFET with Low Reverse Transfer Capacitance Using a Trench/planar Gate Architecture

Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices

Integration of LPCVD-SiNx Gate Dielectric with Recessed-Gate E-Mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime

Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer

Maximizing the Performance of 650 v p-GaN Gate HEMTs: Dynamic Ron Characterization and Gate-Drive Design Considerations

Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform

Nitridation of GaN Surface for Power Device Application: A First-Principles Study

PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer

Role of Shallow Surface Traps and Polarization Charges in Nitride-based Passivation for AlGaN/GaN Heterojunction FET

Switching Transient Analysis for Normally-off GaN Transistors With p-GaN Gate in a Phase-leg Circuit

TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

Analysis of a four generation family reveals the widespread sequence-dependent maintenance of allelic DNA methylation in somatic and germ cells

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain

Compatibility of AlN/SiN_x Passivation With LPCVD-SiN_x Gate Dielectric in GaN-Based MIS-HEMT

Dynamic Gate Stress-induced V_TH Shift and its Impact on Dynamic R_ON in GaN MIS-HEMTs

Gate stack engineering for GaN lateral power transistors

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform

Optoelectronic devices on AlGaN/GaN HEMT platform

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices

面向高性能GaN基功率電子的器件物理研究

Comparison of SiN_x and AlN Passivations for AlGaN/GaN HEMTs

Compatibility of AlN/SiNx Passivation with High-Temperature Process

Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping

First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom

Impact of V_TH Shift on R_ON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors

Performance Enhancement and Characterization Techniques for GaN Power Devices

Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Normally OFF Al₂O₃-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices

Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study

First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line

Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs

Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs

High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer

III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances

Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier

Improved Thermal Stabilities in Normally-Off GaN MIS-HEMTs

Nitridation Interfacial-layer Technology for Enhanced Stability in GaN-based Power Devices

Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform

On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs

Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment

Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform

Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform

Surface Nitridation for Improved Dielectric/III−Nitride Interfaces in GaN MIS−HEMTs

Technology Challenges of GaN Heterojunction Power Devices

Toward reliable MIS- and MOS-gate structures for GaN power devices

900 V/1.6 mΩ · cm² normally off Al₂O₃/GaN MOSFET on silicon substrate

A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform

A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer

AlN/GaN Heteostructure TFTs with Plasma Enhanced Atomic Layer Deposition of Epitaxial AlN Thin Film

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications

High-fMAX high Johnson's figure-of-merit 0.2-μ m gate algan/gan HEMTs on silicon substrate with AlN}/SiNx passivation

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Technology for III-N heterogeneous mixed-signal electronics

A GaN pulse width modulation integrated circuit

Analytical Modeling for AlGaN/GaN HEMTs

Characterizing power delivery systems with on/off-chip voltage regulators for many-core processors

Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics

High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al₂O₃ gate dielectric for high-performance normally-off GaN MIS-HEMTs

Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer

Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode

Nitridation interfacial-layer technology: Enabling low interface trap density and high stability in III-nitride MIS-HEMTs

Normally-off hybrid Al₂O₃/GaN MOSFET on silicon substrate based on wet-etching

Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Stability and temperature dependence of dynamic R_ON in AlN-passivated AlGaN/GaN HEMT on Si substrate

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

A dominant-negative mutation of HSF2 associated with idiopathic azoospermia

A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

Characterization of VT-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs

Device Technology for GaN Mixed-Signal Integrated Circuits

Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Enhancement-Mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

Genome-wide analysis of microRNAs expression profiling in patients with primary IgA nephropathy

High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

High-performance normally-Off Al2O3 GaN MOSFET using a wet etching-based gate recess technique

High-Quality Interface in Al2O3/GaN/GaNAlGaNGaN MIS Structures with in Situ Pre-Gate Plasma Nitridation

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation

Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs

Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Overexpression of Cyclooxygenase-1 Correlates with Poor Prognosis in Renal Cell Carcinoma

Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

600 V High-performance AlGaN/GaN HEMTs with AlN/SiN_x Passivation

600V 1.3mμ·cm2 Low-leakage Low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

AlN/GaN Heterostructure TFTs with the Polarized AlN Barrier Grown by 300 ^oC Plasma Enhanced Atomic Layer Epitaxy

Degradation of Transient OFF-State Leakage Current in AlGaN/GaN HEMTs Induced by ON-State Gate Overdrive

Device technology for GaN mixed-signal integrated circuits

GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-gating Measurements

GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique

High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications

High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates

Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation

Mapping of Interface Traps in High-performance Al₂O ₃/AlGaN/GaN MIS-heterostructures Using Frequency- and Temperature-dependent C-V Techniques

Monolithically Integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-standby-power Start-up Circuit for Switched-mode Power Supplies

Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices

Technology for III-N Heterogeneous Mixed-signal Electronics

Toward GaN-based Power Integrated Circuits

AlGaN/GaN MISHEMTs With High-kappa LaLuO3 Gate Dielectric

AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 m Omega.cm(2) Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer

Characterization of V_th-instability in Al₂O₃/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs

Fe-doped InN layers grown by molecular beam epitaxy

F離子注入新型Al_0.25Ga_0.75N/GaN HEMT器件耐壓分析

High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy

Low Dynamic ON-Resistance in AlGaN/GaN-on-Si Power HEMTs Obtained by AlN Thin Film Passivation

Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage

Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

Thermally activated pop-in and indentation size effects in GaN films

UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

AlD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs

AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High On-State Current and Low Off-State Leakage

AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κ LaLuO3 gate dielectric

Exploiting nanostructure-thin film interfaces in advanced sensor device configurations

Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology

Integrated Gate-protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs

Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs

Normally-off AlGaN/GaN power tunnel-junction FETs

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures

A Compact Dual-Band Coupled-Line Balun with Tapped Open-Ended Stubs

Characterization of High-κ LaLuO₃ Thin Film Grown on AlGaN/GaN Heterostructure by Molecular Beam Deposition

Efficient Parameter Extraction of Microwave Coupled-Resonator Filter Using Genetic Algorithms

Enhanced Electroluminescence from the Fluorine-plasma Implanted Ni/Au-AlGaN/GaN Schottky Diode

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer

Fabrication of GaN-based MEMS structures using dry-etch technique

GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics

High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes

Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors

ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: An XPS study

Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors

A Novel Normally-off GaN Power Tunnel Junction FET

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Characterization of GaN cantilevers fabricated with GaN-on-silicon platform

Design of dual-band coupled-line balun

Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode

Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT

Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology

Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio

Stealth Electrode Dielectrophoresis: Microspheres Manipulation by Patterned 2-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterostructures

The role of fluorine ions in GaN heterojunction transistors: Applications and stability

18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers

Determining phonon deformation potentials of hexagonal GaN with stress modulation

Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of Al_xGa_1-xN/GaN heterostructures

GaN smart power IC technology

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing

Integrated Voltage Reference Generator for GaN Smart Power Chip Technology

Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance

Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: Evidence of Fermi level de-pinning at Ni/AlGaN interface

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology

Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation

GaN smart discrete power devices

GaN Smart Power IC Technologies

Reliability of Enhancement-mode AlGaN/GaN HEMTs Under ON-State Gate Overdrive

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation

Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities

Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Design of dual-band rat-race couplers

Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode

Microbridge tests on gallium nitride thin films

Silicon-on-Organic Integration of a 2.4-GHz VCO Using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology

Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy

Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits

Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications

GaN smart power chip technology

HEMT-compatible lateral field-effect rectifier using CF(4) plasma treatment

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

Integrated voltage reference and comparator circuits for GaN smart power chip technology

Wide bandgap GaN smart power chip technology

A second-order dual-band bandpass filter using a dual-band admittance inverter

Compact broadband dual-band bandpass filters using slotted ground structures

Flip-chip integrated oscillator with reduced phase noise and enhanced output power by using DGS

Fluorine plasma ion implantation in AlGaN/GaN heterostructures: A molecular dynamics simulation study

Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture

High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures

Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma

The effect of physical design parameters on the RF and microwave performance of the BST thin film planar interdigitated varactors

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器

Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing

High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment

High-performance AlGaN/GaN HEMT-compatible lateral field-effect rectifiers

Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures

Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters

Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs

Temperature Dependence of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs

A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs

A stub tapped branch-line coupler for dual-band operations

A tunable bandstop resonator based on a compact slotted ground structure

DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors

High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment

MMIC LNA based novel composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse

Novel composite-channel Al_0.3Ga_0.7N/ Al_0.05Ga_0.95N/GaN HEMT MMIC VCO with low phase noise

Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers

A microstrip bandpass filter with an electronically reconfigurable transmission zero

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment

Fabrication of position-controllable GaN nanostructures

Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate

GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching

Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Microwave performance dependence of BST thin film planar interdigitated varactors on different substrates

Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure

Quantum, power, and compound semiconductors - Reliability and characterization of power HEMTs

Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures

Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure

A physical model for on-chip spiral inductors with accurate substrate modeling

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate

Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate

Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage

Enhancement-mode Si₃N₄/AlGaN/GaN MISHFETs

GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS

Isoelectronic indium-surfactant-doped Al_0.3Ga_0.7N/GaN high electron mobility transistors

Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF₄ plasma treatment

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits

AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch

Analysis of SAW filter fabricated on anisotropic substrate using finite-difference time-domain method

Compact on-chip three-dimensional electromagnetic bandgap structure

Core Technologies for III-Nitride Integrated Microsensors

Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC

Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor

MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse

Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment

A tri-section stepped-impedance resonator for cross-coupled bandpass filters

AlGaN-GaN double-channel HEMTs

AlGaN-GaN HEMTs on patterned silicon (111) substrate

Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs

CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF microwave passive components on silicon substrate

Correlation of in-situ reflectance spectra and resistivity of GaN/Al₂O₃ interfacial layer in metalorganic chemical vapor deposition

Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates

Highly linear Al_0.3Ga_0.7N-Al_0.05Ga_0.95N-GaN composite-channel HEMTs

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition

Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

AlGaN/GaN HEMTs on Grooved Sapphire Substrate

Bandpass and bandstop filters using CMOS-compatible micromachined edge-suspended coplanar waveguides

Compact bandpass filters using slow-wave coplanar waveguide tri-section stepped-impedance resonators

Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS

GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/ GaN HEMTs

Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT

Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Characterization of GaN grown on patterned Si(111) substrates

CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies

High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications

Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate

Low-loss microwave filters on CMOS-grade standard silicon substrate with low-k BCB dielectric

Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN composite-channel HEMTs with enhanced linearity

Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers

Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining

GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors

Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate

High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates

High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications

High-Q CMOS-compatible micromachined edge-suspended spiral inductors

Microwave characterization of high aspect ratio through-wafer interconnect vias in silicon substrates

Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy

Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT

0.5 mu m silicon-on-sapphire metal oxide semiconductor field effect transistor for RF power amplifier applications

Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs

A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications

Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures

AlGaN/GaN/Graded-AlGaN double heterostructure HEMT

Silicon-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology

Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors

Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

High-performance microwave passive components on silicon substrate

High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

High-Q copper inductors on standard silicon substrate with a low-K BCB dielectric layer

RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET

On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer

Design and fabrication of reflective nematic displays with only one polarizer

Experimental realization of reflective bistable cholesteric liquid crystal displays with new driving scheme and low driving voltage

A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips

Novel RTD-HEMT-RTD structure based on simulations

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output

A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications

High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMT's)

Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Microwave-frequency operation of resonant tunneling high electron mobility transistors

Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

A novel multiple-valued logic gate using resonant tunneling devices

An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices

Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts

Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors

High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried gate technology

InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations

InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices

A novel functional logic gate using resonant-tunneling devices for multiple-valued loic applications

A variable function logic gate based on controlled quenching of series connected resonant tunneling devices

High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs)

InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuitapplications

Literal gate using resonant-tunneling devices

Novel ultrafast functional device: resonant tunneling high electron mobility transistor

Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Quantum functional circuits using series-connected resonant tunneling devices

Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)

Monostable-bistable transition logic elements (MOBILEs) based on monolithic integration of resonant tunneling diodes and FETs

Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor

A Unified BSIM I-V Model for Circuit Simulation

High-performance enhancement-mode InAlAs/InGaAs HEMT's using non-alloyed ohmic contact and Pt-based buried-gate

Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Reset-set flip-flop based on a novel approach to modulating resoant-tunneling current with FETs

Reset-set flipflop based on a novel approach of modulating resonant-tunneling current with FET gates

Monolithic integration of resonant tunneling diodes and FETs for Monostable-Bistable Transition Logic Elements (MOBILEs)

Single transistor static memory cell: Circuit application of a new quantum transistor

Dynamics of energy and phase relaxation in ultrafast resonant tunneling transistors

Modeling of a new field-effect resonant tunneling transistor

Observation of the negative persistent photoconductivity in an n-channel GaAs/Al_xGa_1-xAs single heterojunction

Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction

Resonant tunneling between two- and three-dimensions: modeling of tunneling diodes and tunneling transistors

Single transistor static memory cell: circuit application of a new quantum transistor

On the intrinsic bistability in resonant tunneling structures: observation of the area and temperature dependence of hysteresis

The I-V characteristics of doublebarrier resonant tunneling diodes: observation and calculation on their temperature dependence and asymmetry

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

Article

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

Article

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Article

Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors

Article

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p -GaN Gate HEMTs

Article

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Article

Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

Article

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p -GaN Gate HEMTs

Article

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

Article

Investigation of Dynamic I_OFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs

Article

Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs

Article

Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

Article

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-in Schottky Barrier Diode

Article

Short Circuit Capability and Short Circuit Induced V_TH Instability of a 1.2kV SiC Power MOSFET

Article

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Article

Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

Article

Characterization of Dynamic I_OFF in Schottky-Type p-GaN Gate HEMTs

Conference paper

Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode

Conference paper

Development of GaN power Integrated Circuits

Conference paper

DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures

Conference paper

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications

Conference paper

Dynamic Threshold Voltage in p-GaN Gate HEMT

Conference paper

Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Conference paper

Identifying the Location of Hole-Induced Gate Degradation in LPCVD−SiN_x/GaN MIS-FETs under High Reverse-Bias Stress

Conference paper

Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors

Conference paper

Integration on GaN-on-Si p-GaN gate HEMT platform

Conference paper

Investigations of p-shielded SiC trench IGBT with considerations on IE effect, oxide protection and dynamic degradation

Conference paper

Repetitive Short Circuit Energy Dependent V_TH Instability of 1.2kV SiC Power MOSFETs

Conference paper

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Conference paper

Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET

Conference paper

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaO_xN_{1- x} Channel

Conference paper

Temperature-Dependent Gate Degradation of p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

Conference paper

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Article

Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface

Article

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

Article

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN_x Gate Dielectric

Article

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

Article

Dependence of V_TH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Article

Dynamic OFF-State Current (Dynamic I_OFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact

Article

Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3

Article

High-capacitance-density p -Gan gate capacitors for high-frequency power integration

Article

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Article

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study

Article

Interface Engineering of Monolayer MoS₂/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

Article

Layer-dependent Second-order Raman Intensity of MoS₂ and WSe₂: Influence of Intervalley Scattering

Article

Performance and V_TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially-Recessed MIS-HEMTs with LPCVD-SiN_x/PECVD-SiN_x Gate Dielectric Stack

Article

Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Article

Photon Emission and Current-collapse Suppression of AlGaN/GaN Field-effect Transistors with Photonic-ohmic Drain at High Temperatures

Article

Reverse-blocking Normally-OFF GaN Double-channel MOS-HEMT with Low Reverse Leakage Current and Low ON-state Resistance

Article

The 2018 GaN power electronics roadmap

Article

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Article

V_TH instability of p-GaN gate HEMTs under static and dynamic gate stress

Article

An Interdigitated GaN MIS-HEMT/SBD Normally-off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss

Conference paper

Dynamic OFF-State Leakage Current (I_OFF) in GaN power HEMTs

Conference paper

Dynamic OFF-State Leakage Current (I_OFF) in GaN Power HEMTs

Conference paper

Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs

Conference paper

GaN Power Integrated Circuits

Conference paper

High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer

Conference paper

High-speed, high-reliability GaN power device with integrated gate driver

Conference paper

Modeling the gate driver IC for GaN transistor: A black-box approach

Conference paper

Modification of amorphous-SiNx/GaN interface trap density by nitridation: A first-principles calculation study

Conference paper

Monitoring the Surface Functionalizaion of MoS2 and WSe2 for High-k Integration Using In Situ Resonant Raman Spectroscopy - A First-principle study

Conference paper

Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform

Conference paper

Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric

Conference paper

Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric

Conference paper

Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiN_x/GaN MIS-FETs

Conference paper

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain

Conference paper

SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation

Conference paper

Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

Conference paper

Understanding the Dynamic Behaviro in GaN-on-Si Power Devices and IC’s

Conference paper

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

Article

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Article

Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

Article

Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

Article

Enhanced Dielectric Deposition on Single-Layer MoS2 with Low Damage Using Remote N2 Plasma Treatment

Article

GaN-on-Si Power Technology: Devices and Applications

Article

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si₃N₄ as Passivation and Post Gate-Recess Channel Protection Layers

Article

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

Article

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Article

Normally-Off LPCVD-SiN_x/GaN MIS-FET With Crystalline Oxidation Interlayer

Article

Remote N₂ Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS₂ MOSFET

Article

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

Article

SiC Trench MOSFET with Self-biased p-shield for Low R_ON-SP and Low OFF-state Oxide Field

Article

Trapping Mechanisms in Insulated-Gate GaN Power Devices: Understanding and Characterization Techniques

Article

Fluorine-Implanted Enhancement-Mode Transistors

Book chapter

Recent Progress in GaN-on-Si HEMT

Book chapter

An Analytical Model for False Turn-on Evaluation of GaN Transistor in Bridge-Leg Configuration

Conference paper

Buffer Trapping-induced R_ON Degradation in GaN-on-Si Power Transistors: Role of Electron Injection From Si Substrate

Conference paper

Characterization and analysis of dynamic RON of GaN-on-Si lateral power devices with grounded and floating Si substrate

Conference paper

Charge Storage Effect in SiC Trench MOSFET with a Floating p-shield and its Impact on Dynamic Performances

Conference paper

Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack

Conference paper

Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique

Conference paper

High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer

Conference paper

High-speed Power MOSFET with Low Reverse Transfer Capacitance Using a Trench/planar Gate Architecture

Conference paper

Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices

Conference paper

Integration of LPCVD-SiNx Gate Dielectric with Recessed-Gate E-Mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime

Conference paper

Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer

Conference paper

Maximizing the Performance of 650 v p-GaN Gate HEMTs: Dynamic Ron Characterization and Gate-Drive Design Considerations

Conference paper

Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform

Conference paper

Nitridation of GaN Surface for Power Device Application: A First-Principles Study

Conference paper

PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer

Conference paper

Role of Shallow Surface Traps and Polarization Charges in Nitride-based Passivation for AlGaN/GaN Heterojunction FET

Conference paper

Switching Transient Analysis for Normally-off GaN Transistors With p-GaN Gate in a Phase-leg Circuit

Conference paper

TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

Conference paper

Analysis of a four generation family reveals the widespread sequence-dependent maintenance of allelic DNA methylation in somatic and germ cells

Article

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain

Article

Compatibility of AlN/SiN_x Passivation With LPCVD-SiN_x Gate Dielectric in GaN-Based MIS-HEMT

Article

Dynamic Gate Stress-induced V_TH Shift and its Impact on Dynamic R_ON in GaN MIS-HEMTs

Article

Gate stack engineering for GaN lateral power transistors

Article

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Article

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Article

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

Article

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform

Article

Optoelectronic devices on AlGaN/GaN HEMT platform

Article

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Article

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

Article

Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices

Article

面向高性能GaN基功率電子的器件物理研究

Article

Comparison of SiN_x and AlN Passivations for AlGaN/GaN HEMTs

Conference paper

Compatibility of AlN/SiNx Passivation with High-Temperature Process

Conference paper

Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT

Conference paper

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

Conference paper

Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping

Conference paper

First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom

Conference paper

Impact of V_TH Shift on R_ON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive

Conference paper

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors

Conference paper

Performance Enhancement and Characterization Techniques for GaN Power Devices

Conference paper

Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications

Conference paper

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

Article

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Article

An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators

Article

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Article

Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Article

Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation

Article

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric

Article

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

Article

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Article

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Article

Normally OFF Al₂O₃-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Article

O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Article

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Article

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Article

Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Article

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

Article

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Conference paper

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices

Conference paper

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices

Conference paper

Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study

Conference paper

First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line

Conference paper

Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs

Conference paper

Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs

Conference paper

High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer

Conference paper

III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances

Conference paper

Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier

Conference paper

Improved Thermal Stabilities in Normally-Off GaN MIS-HEMTs

Conference paper

Nitridation Interfacial-layer Technology for Enhanced Stability in GaN-based Power Devices

Conference paper

Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance

Conference paper

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform

Conference paper

On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs

Conference paper

Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment

Conference paper

Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform

Conference paper

Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform

Conference paper

Surface Nitridation for Improved Dielectric/III−Nitride Interfaces in GaN MIS−HEMTs

Conference paper

Technology Challenges of GaN Heterojunction Power Devices

Conference paper

Toward reliable MIS- and MOS-gate structures for GaN power devices

Conference paper

900 V/1.6 mΩ · cm² normally off Al₂O₃/GaN MOSFET on silicon substrate

Article

A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform

Article

A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

Article

Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer

Article

AlN/GaN Heteostructure TFTs with Plasma Enhanced Atomic Layer Deposition of Epitaxial AlN Thin Film

Article

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

Article

GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

Article

High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications

Article

High-fMAX high Johnson's figure-of-merit 0.2-μ m gate algan/gan HEMTs on silicon substrate with AlN}/SiNx passivation

Article

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

Article

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Article

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Article

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Article

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Article

Technology for III-N heterogeneous mixed-signal electronics

Article

A GaN pulse width modulation integrated circuit

Conference paper

Analytical Modeling for AlGaN/GaN HEMTs

Conference paper

Characterizing power delivery systems with on/off-chip voltage regulators for many-core processors

Conference paper

Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics

Conference paper

High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al₂O₃ gate dielectric for high-performance normally-off GaN MIS-HEMTs

Conference paper

Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer

Conference paper

Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode

Conference paper

Nitridation interfacial-layer technology: Enabling low interface trap density and high stability in III-nitride MIS-HEMTs

Conference paper

Normally-off hybrid Al₂O₃/GaN MOSFET on silicon substrate based on wet-etching

Conference paper

Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Conference paper

Stability and temperature dependence of dynamic R_ON in AlN-passivated AlGaN/GaN HEMT on Si substrate

Conference paper

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

Conference paper

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

Article

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Article

600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Article

A dominant-negative mutation of HSF2 associated with idiopathic azoospermia

Article

A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

Article

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

Article

AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

Article

Characterization of VT-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs

Article

Device Technology for GaN Mixed-Signal Integrated Circuits

Article

Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Article

Enhancement-Mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Article

Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs

Article

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

Article

Genome-wide analysis of microRNAs expression profiling in patients with primary IgA nephropathy

Article

High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

Article

High-performance normally-Off Al2O3 GaN MOSFET using a wet etching-based gate recess technique

Article

High-Quality Interface in Al2O3/GaN/GaNAlGaNGaN MIS Structures with in Situ Pre-Gate Plasma Nitridation

Article

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation

Article

Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs

Article

Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier

Article

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Article

Overexpression of Cyclooxygenase-1 Correlates with Poor Prognosis in Renal Cell Carcinoma

Article

Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Article

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

Article

600 V High-performance AlGaN/GaN HEMTs with AlN/SiN_x Passivation

Conference paper

600V 1.3mμ·cm2 Low-leakage Low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Conference paper

AlN/GaN Heterostructure TFTs with the Polarized AlN Barrier Grown by 300 ^oC Plasma Enhanced Atomic Layer Epitaxy

Conference paper

Degradation of Transient OFF-State Leakage Current in AlGaN/GaN HEMTs Induced by ON-State Gate Overdrive

Conference paper

Device technology for GaN mixed-signal integrated circuits

Conference paper

GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-gating Measurements

Conference paper

GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

Conference paper

High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique

Conference paper

High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications

Conference paper

High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates

Conference paper

Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation

Conference paper

Mapping of Interface Traps in High-performance Al₂O ₃/AlGaN/GaN MIS-heterostructures Using Frequency- and Temperature-dependent C-V Techniques

Conference paper

Monolithically Integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-standby-power Start-up Circuit for Switched-mode Power Supplies

Conference paper

Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices

Conference paper

Technology for III-N Heterogeneous Mixed-signal Electronics

Conference paper

Toward GaN-based Power Integrated Circuits

Conference paper

AlGaN/GaN MISHEMTs With High-kappa LaLuO3 Gate Dielectric

Article

AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 m Omega.cm(2) Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

Article

Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer

Article

Characterization of V_th-instability in Al₂O₃/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement

Article

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Article

Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs

Article

Fe-doped InN layers grown by molecular beam epitaxy

Article

F離子注入新型Al_0.25Ga_0.75N/GaN HEMT器件耐壓分析

Article

High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy

Article

Low Dynamic ON-Resistance in AlGaN/GaN-on-Si Power HEMTs Obtained by AlN Thin Film Passivation

Article

Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage

Article

Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

Article

Thermally activated pop-in and indentation size effects in GaN films

Article

UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction

Article

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Article

AlD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs

Conference paper

AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High On-State Current and Low Off-State Leakage

Conference paper

AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

Conference paper

AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

Conference paper

Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κ LaLuO3 gate dielectric

Conference paper

Exploiting nanostructure-thin film interfaces in advanced sensor device configurations

Conference paper

Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology

Conference paper

Integrated Gate-protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs

Conference paper

Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs

Conference paper

Normally-off AlGaN/GaN power tunnel-junction FETs

Conference paper

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures

Conference paper

A Compact Dual-Band Coupled-Line Balun with Tapped Open-Ended Stubs

Article

Characterization of High-κ LaLuO₃ Thin Film Grown on AlGaN/GaN Heterostructure by Molecular Beam Deposition

Article

Efficient Parameter Extraction of Microwave Coupled-Resonator Filter Using Genetic Algorithms

Article

Enhanced Electroluminescence from the Fluorine-plasma Implanted Ni/Au-AlGaN/GaN Schottky Diode

Article

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

Article

Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer

Article

Fabrication of GaN-based MEMS structures using dry-etch technique

Article

GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics

Article

High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation

Article

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Article

Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes

Article

Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors

Article

ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Article

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Article

Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: An XPS study

Article

Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors

Article

A Novel Normally-off GaN Power Tunnel Junction FET

Conference paper

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Conference paper

Characterization of GaN cantilevers fabricated with GaN-on-silicon platform

Conference paper

Design of dual-band coupled-line balun

Conference paper

Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode

Conference paper

Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT

Conference paper

Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology

Conference paper

Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio

Conference paper

Stealth Electrode Dielectrophoresis: Microspheres Manipulation by Patterned 2-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterostructures

Conference paper

The role of fluorine ions in GaN heterojunction transistors: Applications and stability

Conference paper

18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation

Article

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

Article

AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

Article

Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers

Article

Determining phonon deformation potentials of hexagonal GaN with stress modulation

Article

Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of Al_xGa_1-xN/GaN heterostructures

Article

GaN smart power IC technology

Article

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Article

Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing

Article

Integrated Voltage Reference Generator for GaN Smart Power Chip Technology

Article

Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

Article

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Article

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Article

Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

Article

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

Article

AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance

Conference paper

Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: Evidence of Fermi level de-pinning at Ni/AlGaN interface

Conference paper

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology

Conference paper

Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation

Conference paper

GaN smart discrete power devices

Conference paper

GaN Smart Power IC Technologies

Conference paper

Reliability of Enhancement-mode AlGaN/GaN HEMTs Under ON-State Gate Overdrive

Conference paper

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Conference paper

Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation

Conference paper

Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities

Conference paper

Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology

Conference paper

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Article

Design of dual-band rat-race couplers

Article

Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

Article

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Article

Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode

Article

Microbridge tests on gallium nitride thin films

Article

Silicon-on-Organic Integration of a 2.4-GHz VCO Using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology

Article

Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

Article

Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy

Article

Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits

Article

Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications

Article

GaN smart power chip technology

Conference paper

HEMT-compatible lateral field-effect rectifier using CF(4) plasma treatment

Conference paper

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

Conference paper

Integrated voltage reference and comparator circuits for GaN smart power chip technology

Conference paper

Wide bandgap GaN smart power chip technology

Conference paper

A second-order dual-band bandpass filter using a dual-band admittance inverter

Article

Compact broadband dual-band bandpass filters using slotted ground structures

Article

Flip-chip integrated oscillator with reduced phase noise and enhanced output power by using DGS

Article

Fluorine plasma ion implantation in AlGaN/GaN heterostructures: A molecular dynamics simulation study

Article

Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture

Article

High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Article

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Article

Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures

Article

Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma

Article

The effect of physical design parameters on the RF and microwave performance of the BST thin film planar interdigitated varactors

Article

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器

Article

Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors

Conference paper

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

Conference paper

Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs

Conference paper

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Conference paper

Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing

Conference paper

High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment

Conference paper

High-performance AlGaN/GaN HEMT-compatible lateral field-effect rectifiers

Conference paper

Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures

Conference paper

Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters

Conference paper

Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs

Conference paper

Temperature Dependence of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier

Conference paper

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs

Article

A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Article

A stub tapped branch-line coupler for dual-band operations

Article

A tunable bandstop resonator based on a compact slotted ground structure

Article

DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Article

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors

Article

High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

Article

Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment

Article

MMIC LNA based novel composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Article

Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse

Article

Novel composite-channel Al_0.3Ga_0.7N/ Al_0.05Ga_0.95N/GaN HEMT MMIC VCO with low phase noise

Article

Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers

Article

A microstrip bandpass filter with an electronically reconfigurable transmission zero

Conference paper

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment

Conference paper

Fabrication of position-controllable GaN nanostructures

Conference paper

Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate

Conference paper

GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching

Conference paper

Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Conference paper

Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Conference paper

Microwave performance dependence of BST thin film planar interdigitated varactors on different substrates

Conference paper

Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure

Conference paper

Quantum, power, and compound semiconductors - Reliability and characterization of power HEMTs

Conference paper

Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Conference paper

SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures

Conference paper

Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure

Conference paper

A physical model for on-chip spiral inductors with accurate substrate modeling

Article

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

Article

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

Article

CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate

Article

Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate

Article

Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

Article

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Article

Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage

Article

Enhancement-mode Si₃N₄/AlGaN/GaN MISHFETs

Article

GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS

Article

Isoelectronic indium-surfactant-doped Al_0.3Ga_0.7N/GaN high electron mobility transistors

Article

Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

Article

Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators

Article

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF₄ plasma treatment

Article

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Article

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits

Conference paper

AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch

Conference paper

Analysis of SAW filter fabricated on anisotropic substrate using finite-difference time-domain method

Conference paper

Compact on-chip three-dimensional electromagnetic bandgap structure

Conference paper

Core Technologies for III-Nitride Integrated Microsensors

Conference paper

Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique

Conference paper

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Conference paper

GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC

Conference paper

Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor

Conference paper

MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

Conference paper

Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse

Conference paper

Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment

Conference paper

A tri-section stepped-impedance resonator for cross-coupled bandpass filters

Article

AlGaN-GaN double-channel HEMTs

Article

AlGaN-GaN HEMTs on patterned silicon (111) substrate

Article

Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Article

CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF microwave passive components on silicon substrate

Article

Correlation of in-situ reflectance spectra and resistivity of GaN/Al₂O₃ interfacial layer in metalorganic chemical vapor deposition

Article

Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates

Article

Highly linear Al_0.3Ga_0.7N-Al_0.05Ga_0.95N-GaN composite-channel HEMTs

Article

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Article

III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Article

Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition

Article

Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates

Article

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

Article

Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET

Book chapter

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

Conference paper

AlGaN/GaN HEMTs on Grooved Sapphire Substrate

Conference paper

Bandpass and bandstop filters using CMOS-compatible micromachined edge-suspended coplanar waveguides

Conference paper

Compact bandpass filters using slow-wave coplanar waveguide tri-section stepped-impedance resonators

Conference paper

Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

Conference paper

GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS

Conference paper

GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors

Conference paper

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/ GaN HEMTs

Conference paper

Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Conference paper

Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT

Conference paper

Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Conference paper

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Article

Characterization of GaN grown on patterned Si(111) substrates

Article

CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies

Article

High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications

Article

Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate

Article

Low-loss microwave filters on CMOS-grade standard silicon substrate with low-k BCB dielectric

Article

Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

Conference paper

Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN composite-channel HEMTs with enhanced linearity

Conference paper

Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers

Conference paper

Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining

Conference paper

GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors

Conference paper

Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

Conference paper

High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate

Conference paper

High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates

Conference paper

High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications

Conference paper

High-Q CMOS-compatible micromachined edge-suspended spiral inductors

Conference paper

Microwave characterization of high aspect ratio through-wafer interconnect vias in silicon substrates

Conference paper

Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy

Conference paper

Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT

Conference paper

0.5 mu m silicon-on-sapphire metal oxide semiconductor field effect transistor for RF power amplifier applications

Article

Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Article

A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs

Conference paper

A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications

Conference paper

Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures

Conference paper

AlGaN/GaN/Graded-AlGaN double heterostructure HEMT

Conference paper

Silicon-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology

Conference paper

Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors

Conference paper

Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

Article

High-performance microwave passive components on silicon substrate

Conference paper

High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Conference paper

High-Q copper inductors on standard silicon substrate with a low-K BCB dielectric layer

Conference paper

RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET

Conference paper

On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer

Conference paper

Design and fabrication of reflective nematic displays with only one polarizer

Article

Experimental realization of reflective bistable cholesteric liquid crystal displays with new driving scheme and low driving voltage

Article

A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips

Conference paper

Novel RTD-HEMT-RTD structure based on simulations

Conference paper

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output

Article

A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications

Article

High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMT's)

Article

Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Conference paper

Microwave-frequency operation of resonant tunneling high electron mobility transistors

Conference paper

Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

Conference paper

A novel multiple-valued logic gate using resonant tunneling devices

Article

An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices

Article

Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts

Article

Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors

Article

High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried gate technology

Article

InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations

Article

InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices

Article

A novel functional logic gate using resonant-tunneling devices for multiple-valued loic applications

Conference paper

A variable function logic gate based on controlled quenching of series connected resonant tunneling devices

Conference paper

High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs)

Conference paper

InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuitapplications

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