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Kevin Jing CHEN
陳敬

PhD in Electrical Engineering
The University of Maryland, 1993

Chair Professor
Department of Electronic and Computer Engineering

  • (852) 2358 8969
  • eekjchen@ust.hk
  • Room 2421
  • Personal Web

Google Scholar
npmd96IAAAAJ
ORCID
0000-0002-0659-2022
Scopus ID
10142978900
Research Interest Publications Projects Teaching Assignment RPG Supervision Space used

Research Interest


  • Power semiconductor devices and ICs
  • High-frequency semiconductor devices
  • Wide-bandgap semiconductor devices
  • Gallium nitride (GaN)-based microwave power transistors
  • Compound semiconductor materials and devices

Publications


All Years 599 2023 4 2022 23 2021 32 2020 31 2019 35 2018 38 2017 436

2023 4

An Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps

IEEE Electron Device Letters, v. 44, (1), January 2023, p. 25-28
Wu, Yanlin; Wei, Jin; Wang, Maojun; Nuo, Muqin; Yang, Junjie; Lin, Wei; Zheng, Zheyang; Zhang, Li; Hua, Mengyuan; Yang, Xuelin; Hao, Yilong; Chen, Jing; Shen, Bo
Article

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

IEEE Journal of the Electron Devices Society, v. 11, March 2023, article number 10077731, p. 198-203
Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; Chen, Kevin J.
Article

Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Advanced Materials, v. 35, (12), March 2023, article number 2208960
Chen, Junting; Zhao, Junlei; Feng, Sirui; Zhang, Li; Cheng, Yan; Liao, Hang; Zheng, Zheyang; Chen, Xiaolong; Gao, Zhen; Chen, Kevin J.; Hua, Mengyuan
Article

RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates

IEEE Electron Device Letters, v. 44, (1), January 2023, article number 9941147, p. 29-31
Cheng, Yan; Ng, Yat Hon; Zheng, Zheyang; Chen, Jing
Article
2022 23

650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications

IEEE Transactions on Industrial Electronics, v. 69, (9), September 2022, article number 9552482, p. 8997-9006
Zhong, Kailun; Wang, Yuru; Lyu, Gang; Wei, Jin; Sun, Jiahui; Chen, Kevin J.
Article

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

AIP Advances, v. 12, (4), April 2022, article number 045125
Song, Wenjie; Zhang, Jie; Zheng, Zheyang; Feng, Sirui; Yang, Xuelin; Shen, Bo; Chen, Jing
Article

GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

IEEE Electron Device Letters, v. 43, (5), May 2022, article number 9739008, p. 697-700
Chen, Tao; Zheng, Zheyang; Feng, Sirui; Zhang, Li; Song, Wenjie; Chen, Jing
Article

GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits

IEEE Transactions on Electron Devices, v. 69, (8), August 2022, article number 9789144, p. 4162-4169
Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Feng, Sirui; Chen, Jing
Article

GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

IEEE Electron Device Letters, v. 43, (11), November 2022, article number 9900349, p. 1826-1829
Lyu, Gang; Feng, Sirui; Zhang, Li; Chen, Tao; Wei, Jin; Chen, Jing
Article

Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack

IEEE Electron Device Letters, v. 43, (11), November 2022, article number 9889687, p. 1822-1825
Zhang, Li; Zheng, Zheyang; Song, Wenjie; Chen, Tao; Feng, Sirui; Chen, Junting; Hua, Mengyuan; Chen, Jing
Article

Gate Reliability of Schottky-Type p-GaN Gate HEMTs under AC Positive Gate Bias Stress with a Switching Drain Bias

IEEE Electron Device Letters, v. 43, (9), September 2022, article number 9815302, p. 1404-1407
Cheng, Yan; He, Jiabei; Xu, Han; Zhong, Kailun; Zheng, Zheyang; Sun, Jiahui; Chen, Kevin J.
Article

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

IEEE Transactions on Industrial Electronics, v. 69, (8), August 2022, p. 8387-8395
Zhong, Kailun; Wei, Jin; He, Jiabei; Feng, Sirui; Wang, Yuru; Yang, Song; Chen, Jing
Article

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Applied Physics Letters, v. 120, (12), March 2022, article number 122109
Liao, Yaqiang; Chen, Tao; Wang, Jia; Cai, Wentao; Ando, Yuto; Yang, Xu; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Jing; Amano, Hiroshi
Article

Interfacial band parameters of ultrathin ALD-Al2O3, ALD-HfO2, and PEALD-AlN/ALD-Al2O3 on c-plane, Ga-face GaN through XPS measurements

Journal of Applied Physics, v. 132, (13), 3 October 2022, article number 135302
Gong, Jiarui; Zheng, Zheyang; Vincent, Daniel; Zhou, Jie; Kim, Jisoo; Kim, Donghyeok; Ng, Tien Khee; Ooi, Boon S.; Chen, Kevin J.; Ma, Zhenqiang
Article

Monolithic Integration of Gate Driver and Protection Modules with p-GaN Gate Power HEMTs

IEEE Transactions on Industrial Electronics, v. 69, (7), July 2022, p. 6784-6793
Xu, Han; Tang, Gaofei; Wei, Jin; Zheng, Zheyang; Chen, Jing
Article

Normally-OFF p-GaN Gate Double-Channel HEMT with Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

IEEE Electron Device Letters, v. 43, (9), 1 August 2022, p. 1424-1427
Liao, Hang; Zheng, Zheyang; Chen, Tao; Zhang, Li; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Long; Yuan, Li; Chen, Kevin Jing
Article

ON-Resistance Analysis of GaN Reverse-Conducting HEMT with Distributive Built-In SBD

IEEE Transactions on Electron Devices, v. 69, (2), February 2022, p. 644-649
Wei, Jin; Zhang, Li; Zheng, Zheyang; Song, Wenjie; Yang, Song; Chen, Jing
Article

Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs

IEEE Transactions on Industrial Electronics, v. 69, (7), July 2022, article number 9499957, p. 7340-7348
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing
Article

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE Transactions on Industrial Electronics, v. 69, (12), December 2022, article number 9658266, p. 12773-12783
Lyu, Gang; Sun, Jiahui; Wang, Yuru; Chen, Jing
Article

Strain release in GaN epitaxy on 4° off-axis 4H-SiC

Advanced Materials, v. 34, (23), June 2022, article number 2201169
Feng, Sirui; Zheng, Zheyang; Cheng, Yan; Ng, Yat Hon; Song, Wenjie; Chen, Tao; Zhang, Li; Liu, Kai; Cheng, Kai; Chen, Jing
Article

Substrate and Trench Design for GaN-on-EBUS Power IC Platform

IEEE Transactions on Electron Devices, v. 69, (7), July 2022, article number 9790852, p. 3641-3647
Lyu, Gang; Wei, Jin; Chen, Tao; Zhang, Jie; Chen, Jing
Article

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Applied Physics Letters, v. 120, (15), 11 April 2022, article number 152102
Zheng, Zheyang; Chen, Tao; Zhang, Li; Song, Wenjie; Chen, Kevin J.
Article

Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, 2022, article number 9813597, p. 73-76
Sun, Jiahui; Zheng, Zheyang; Zhang, Li; Chen, Jing
Conference paper

Correlation between Pulse I-V Tests and Human Body Model (HBM) Electrostatic Discharge (ESD) Tests for GaN HEMTs


Sun, Jiahui; Zheng, Zheyang; Zhang, Li; Chen, Kevin Jing
Conference paper

Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, May 2022, article number 9813627, p. 325-328
Xu, Han; Zheng, Zheyang; Zhang, Li; Sun, Jiahui; Yang, Song; He, Jiabei; Wei, Jin; Chen, Kevin Jing
Conference paper

Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, 2022, article number 9813687, p. 129-132
Cheng, Yan; Xu, Han; Zhang, Li; Chen, Tao; Chen, Junting; Zheng, Zheyang; Chen, Jing
Conference paper

Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, 2022, article number 9813683, p. 185-188
Lyu, Gang; Wei, Jin; Ng, Yat Hon; Cheng, Yan; Feng, Sirui; Chen, Jing
Conference paper
2021 32

p-GaN Gate HEMT with Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9253682, p. 22-25
Zhang, Li; Zheng, Zheyang; Yang, Song; Song, Wenjie; He, Jiabei; Chen, Jing
Article

A Physics-Based Empirical Model of Dynamic IOFF under Switching Operation in p-GaN Gate Power HEMTs

IEEE Transactions on Power Electronics, v. 36, (9), September 2021, article number 9364720, p. 9796-9805
Wang, Yuru; Chen, Tao; Hua, Mengyuan; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Zhong, Kailun; Chen, Jing
Article

An ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits

Semiconductor Science and Technology, v. 36, (4), April 2021, article number 044002
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Sun, Qian; Chen, Jing
Article

Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching

IEEE Electron Device Letters, v. 42, (4), April 2021, p. 501-504
Zhong, Kailun; Xu, Han; Zheng, Zheyang; Chen, Junting; Chen, Kevin Jing
Article

Characterization of GaON as a Surface Reinforcement Layer of p-GaN in Schottky-type p-GaN Gate HEMTs

Applied Physics Letters, v. 119, (5), 2 August 2021, article number 053503
Zhang, Lining; Zheng, Zheyang; Yang, Song; Song, Wenjie; Feng, Sirui; Chen, Jing
Article

Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Network

IEEE Transactions on Antennas and Propagation, v. 69, (4), April 2021, article number 9254157, p. 1864-1873
Qiu, Haochuan; Liu, Houfang; Jia, Xiufeng; Jiang, Zhou-Ying; Liu, Yan-Hua; Xu, Jianlong; Lu, Tianqi; Shao, Minghao; Ren, Tian-Ling; Chen, Jing
Article

Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9420748, p. 986-989
Chen, Junting; Hua, Mengyuan; Wang, Chengcai; Liu, Ling; Li, Lingling; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Jing
Article

Dv/Dt-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device

IEEE Transactions on Power Electronics, v. 36, (3), March 2021, article number 9163283, p. 3312-3322
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Chen, Jing
Article

Gallium nitride-based complementary logic integrated circuits

Nature Electronics, v. 4, 19 July 2021, p. 595-603
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Feng, Sirui; Xu, Han; Sun, Jiahui; Yang, Song; Chen, Tao; Wei, Jin; Chen, Jing
Article

GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

IEEE Journal of the Electron Devices Society, v. 9, May 2021, article number 9423527, p. 545-551
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing
Article

GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation

IEEE Electron Device Letters, v. 42, (4), April 2021, p. 489-492
Yang, Song; Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Kevin Jing
Article

Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT

IEEE Electron Device Letters, v. 42, (5), May 2021, article number 9383262, p. 669-672
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhao, Junlei; Yang, Song; Zhang, Li; Zheng, Zheyang; Wei, Jin; Chen, Kevin Jing
Article

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

IEEE Transactions on Power Electronics, v. 36, (11), November 2021, article number 9416882, p. 12158-12162
Sun, Jiahui; Zheng, Zheyang; Zhong, Kailun; Lyu, Gang; Chen, Jing
Article

Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs

IEEE Transactions on Power Electronics, v. 36, (5), May 2021, article number 9222279, p. 5904-5914
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing
Article

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9264210, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing
Article

Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs

Applied Physics Letters, v. 118, (16), April 2021, article number 163502
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Jing
Article

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs

IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 9, (3), June 2021, article number 9144186, p. 3686-3694
Chen, Junting; Hua, Mengyuan; Wei, Jin; He, Jiabei; Wang, Chengcai; Zheng, Zheyang; Chen, Jing
Article

On the Operating Speed and Energy Efficiency of GaN-based Monolithic Complementary Logic Circuits for Integrated Power Conversion Systems

Fundamental Research, v. 1, (6), November 2021, p. 661-671
Zheng, Zheyang; Xu, Han; Zhang, Li; Chen, Jing
Article

Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor

Semiconductor Science and Technology, v. 36, (2), January 2021, article number 024006
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Jing
Article

RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure

IEEE Electron Device Letters, v. 42, (8), August 2021, article number 9449839, p. 1116-1119
Song, Wenjie; Zheng, Zheyang; Chen, Tao; Wei, Jin; Yuan, Li; Chen, Jing
Article

Short Circuit Capability Characterization and Analysis of P-GaN Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

IEEE Transactions on Industrial Electronics, v. 68, (9), September 2021, article number 9145816, p. 8798-8807
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Chen, Jing
Article

Threshold Voltage Instability Of Enhancement-Mode GaN Buried p-Channel MOSFETs

IEEE Electron Device Letters, v. 42, (11), November 2021, p. 1584-1587
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Tao; Feng, Sirui; Ng, Yat Hon; Sun, Jiahui; Xu, Han; Yang, Song; Wei, Jin; Chen, Kevin J.
Article

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Japanese Journal of Applied Physics, v. 60, (7), July 2021, article number 070903
Liao, Yaqiang; Chen, Tao; Wang, Jia; Ando, Yuto; Cai, Wentao; Yang, Xu; Watanabe, Hirotaka; Hirotani, Jun; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Jing; Amano, Hiroshi
Article

A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452232, p. 39-42
Zhong, Kailun; Xu, Han; Yang, Song; Zheng, Zheyang; Chen, Junting; Chen, Jing
Conference paper

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Technical Digest - International Electron Devices Meeting, IEDM, v. 2021-December, December 2021, p. 5.2.1-5.2.4
Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Tao; Zhong, Kailun; Liu, Jiapeng; Zeng, Rong; Chen, Jing
Conference paper

Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Device

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452274, p. 223-226
Zhong, Kailun; Sun, Jiahui; Wang, Yuru; Lyu, Gang; Feng, Sirui; Chen, Tao; Chen, Jing
Conference paper

Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452266, p. 207-210
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing
Conference paper

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability

Proceedings of International Conference on ASIC, v. 2021, October 2021, article number 9620369
Hua, Mengyuan; Chen, Junting; Wang, Chengcai; Li, Lingling; Liu, Ling; Zheng, Zheyang; Chen, Jing
Conference paper

Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452204, p. 35-38
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Jing
Conference paper

Impact Of OFF-state Gate Bias On Dynamic RON of p-GaN Gate HEMT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452256, p. 47-50
Jiang, Zuoheng; Hua, Mengyuan; Huang, Xinran; Li, Lingling; Chen, Junting; Chen, Jing
Conference paper

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

Technical Digest - International Electron Devices Meeting, IEDM, v. 2021-December, December 2021, article number 9720653, p. 5.3.1-5.3.4
Zhang, Li; Zheng, Zheyang; Cheng, Yan; Ng, Yat Hon; Feng, Sirui; Song, Wenjie; Chen, Tao; Chen, Jing
Conference paper

Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452259, p. 43-46
Zhang, Li; Yang, Song; Zheng, Zheyang; Song, Wenjie; Liao, Hang; Chen, Jing
Conference paper
2020 31

p-GaN Gate Power Transistor with Distributed Built-in Schottky Barrier Diode for Low-Loss Reverse Conduction

IEEE Electron Device Letters, v. 41, (3), March 2020, p. 341-344
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Xu, Han; Chen, Kevin Jing
Article

A Normally-OFF Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE Transactions on Power Electronics, v. 35, (9), September 2020, p. 9669-9679
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Zhang, Long; Chen, Kevin J.
Article

Characterization and Analysis of Low-Temperature Time-To-Failure Behavior in Forward-Biased Schottky-Type p-GaN Gate HEMTs

Applied Physics Letters, v. 116, (22), June 2020
He, Jiabei; Wei, Jin; Li, Yang; Zheng, Zheyang; Yang, Song; Huang, Baoling; Chen, Jing
Article

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

IEEE Transactions on Industrial Electronics, v. 67, (12), December 2020, article number 8936541, p. 10284-10294
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; He, Jiabei; Lei, Jiacheng; Chen, Jing
Article

E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

IEEE Electron Device Letters, v. 41, (4), April 2020, article number 9017996, p. 545-548
Wang, Chengcai; Hua, Mengyuan; Chen, Junting; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Li; Chen, Kevin Jing
Article

GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage

IEEE Electron Device Letters, v. 41, (9), September 2020, article number 9145684, p. 1304-1307
Zheng, Zheyang; Song, Wenjie; Lei, Jiacheng; Qian, Qingkai; Wei, Jin; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J.
Article

GaN Power IC Technology on p-GaN Gate HEMT Platform

Japanese journal of applied physics, v. 59, (SG), April 2020, article number SG0801
Wei, Jin; Tang, Gaofei; Xie, Ruiliang; Chen, Kevin Jing
Article

High ION and ION/IOFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform

IEEE Electron Device Letters, v. 41, (1), January 2020, article number 8907389, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing
Article

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al2O3 Gate Dielectric and In Situ Si3N4-Cap Passivation

IEEE Transactions on Electron Devices, v. 67, (10), October 2020, article number 9189937, p. 4136-4140
Zhu, Liyang; Zhou, Qi; Yang, Xiu; Lei, Jiacheng; Chen, Kuangli; Luo, Zhihua; Huang, Peng; Zhou, Chunhua; Chen, Jing; Zhang, Bo
Article

High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 8, (1), March 2020, p. 215-222
Sun, Jiahui; Yang, Shu; Xu, Hongyi; Zhang, Long; Wu, Xinke; Sheng, Kuang; Chen, Kevin Jing
Article

Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations

IEEE Transactions on Electron Devices, v. 67, (1), January 2020, article number 8930629, p. 217-223
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing
Article

Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

IEEE Electron Device Letters, v. 41, (5), May 2020, article number 9032129, p. 685-688
Yang, Song; Huang, Sen; Wei, Jin; Zheng, Zheyang; Wang, Yuru; He, Jiabei; Chen, Kevin Jing
Article

Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Journal of the Electron Devices Society, v. 8, April 2020, p. 358-364
Yang, Song; Tang, Zhikai; Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lu, Yunyou; Chen, Kevin Jing
Article

Overcoming the Limitations of Gallium Oxide Through Heterogeneous Integration

Science China Physics, Mechanics & Astronomy, v. 64, (1), 2021, article number 217331
Zhang, Yuhao; Chen, Jing
Article

Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals

IEEE Transactions on Electron Devices, v. 67, (10), 19 August 2020, article number 9171548, p. 4335-4339
Wei, Jin; Zhang, Meng; Chen, Jing
Article

700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, v. 2020-September, September 2020, article number 9170075, p. 521-524
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Feng, Sirui; Chen, Kevin J.
Conference paper

A Novel Ultra-Thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-Temperature Reverse Blocking Characteristic

2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278128
Zhu, Liyang; Zhou, Qi; Chen, Kuangli; Yang, Xiu; Lei, Jiacheng; Luo, Zhihua; Zhou, Chunhua; Chen, Kevin J; Zhang, Bo
Conference paper

A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170086, p. 325-328
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; Chen, Kevin J.
Conference paper

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-temperature Power Switching Applications

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360291
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Zhong, Kailun; Chen, Jing
Conference paper

Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off

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2019 35

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

npj 2D Materials and Applications, v. 3, (1), 13 June 2019, article number 24
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A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

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Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Applied Physics Letters, v. 114, (5), February 2019, article number 053109
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Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors

Journal of Applied Physics, v. 126, (16), October 2019, article number 164505
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ACS Applied Electronic Materials, v. 1, (5), 28 May 2019, p. 642-648
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Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p -GaN Gate HEMTs

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Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study

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Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

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Conference paper
2018 38

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

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Applied Physics Express, v. 11, (8), August 2018, article number 081003
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Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Physica Status Solidi (A) Applications and Materials, v. 215, (10), May 2018, article number 1700641
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
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Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

IEEE Electron Device Letters, v. 39, (1), January 2018, article number 8101516, p. 59-62
Wei, Jin; Lei, Jiacheng; Tang, Xi; Li, Baikui; Liu, Shenghou; Chen, Jing
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Dependence of VTH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

IEEE Electron Device Letters, v. 39, (3), March 2018, p. 413-416
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing
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Dynamic OFF-State Current (Dynamic IOFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact

IEEE Electron Device Letters, 39, 9, September 2018, article number 8402216, p. 1366-1369
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Lei, Jiacheng; Zheng, Zheyang; Wei, Jin; Chen, Jing
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Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3

Nano Energy, v. 43, January 2018, p. 259-269
Kim, Kwangeun; Hua, Mengyuan; Liu, Dong; Kim, Jisoo; Chen, Kevin J; Ma, Zhenqiang
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High-capacitance-density p-Gan gate capacitors for high-frequency power integration

IEEE Electron Device Letters, v. 39, (9), September 2018, article number 8408835, p. 1362-1365
Tang, Gaofei; Kwan, Man Ho; Su, Ru Yi; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Yang, Thomas; Chern, Chan Hong; Tsai, Tom; Tuan, Hsiao Chin; Kalnitsky, Alex; Chen, Jing
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Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

IEEE Transactions on Electron Devices, v. 65, (9), September 2018, article number 8423427, p. 3831-3838
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zheng, Zheyang; Zhang, Zhaofu; He, Jiabei; Chen, Jing
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In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study

Langmuir, v. 34, (8), 2018, p. 2882-2889
Qian, Qingkai; Zhang, Zhaofu; Chen, Kevin J.
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Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

ACS Applied Materials Interfaces, v. 10, (20), May 2018, p. 17419-17426
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Layer-dependent Second-order Raman Intensity of MoS2 and WSe2: Influence of Intervalley Scattering

Physical Review B, v. 97, (16), April 2018, article number 165409
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Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially-Recessed MIS-HEMTs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

IEEE Transactions on Electron Devices, v. 65, (8), Aug 2018, article number 8405596, p. 3185-3191
He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Chen, Jing
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Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Applied Physics Express, v. 11, (5), May 2018, article number 054101
Tang, Xi; Li, Baikui; Chen, Kevin Jing; Wang, Jiannong
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Photon Emission and Current-collapse Suppression of AlGaN/GaN Field-effect Transistors with Photonic-ohmic Drain at High Temperatures

Applied Physics Express, v. 11, (7), July 2018, article number 071003
Tang, Xi; Zhang, Zhaofu; Wei, Jin; Li, Baikui; Wang, Jiannong; Chen, Jing
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Reverse-blocking Normally-OFF GaN Double-channel MOS-HEMT with Low Reverse Leakage Current and Low ON-state Resistance

IEEE Electron Device Letters, v. 39, (7), July 2018, p. 1003-1006
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The 2018 GaN power electronics roadmap

Journal of physics. D. Applied physics, v. 51, (16), 26 March 2018, article number 163001
H amano; Y baines; E beam; Matteo borga; T bouchet; Paul r chalker; M charles; Chen, Kevin Jing; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Cioccio, L. Di; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xi; Marcon, Denis; Marz, Martin; McCarthy R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narauyanan, E.M.S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hon, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico
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VTH instability of p-GaN gate HEMTs under static and dynamic gate stress

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Dynamic OFF-State Leakage Current (IOFF) in GaN Power HEMTs


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Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric


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Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric

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Conference paper

Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs

Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, p. 33.2.1-33.2.4
Hua, Mengyuan; Wei, Jin; Bao, Qilong; He, Jiabei; Zhang, Zhaofu; Zheng, Zheyang; Lei, Jiacheng; Chen, Jing
Conference paper

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 276-279
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Chen, Jing
Conference paper

SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 411-414
Wei, Jin; Zhang, Meng; Jiang, Huaping; To, Suet; Kim, Sunghan; Kim, Jun Youn; Chen, Jing
Conference paper

Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress


He, Jiabei; Tang, Gaofei; Hua, Mengyuan; Chen, Jing
Conference paper

Understanding the Dynamic Behaviro in GaN-on-Si Power Devices and IC’s


Chen, Kevin Jing
Conference paper
2017 35

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

IEEE Transactions on Device and Materials Reliability, v. 17, (2), June 2017, article number 7898842, p. 432-437
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang
Article

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

IEEE Transactions on Power Electronics, v. 32, (8), August 2017, article number 7592895, p. 6416-6433
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J.
Article

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

IEEE ELECTRON DEVICE LETTERS, v. 38, (9), September 2017, p. 1282-1285
Tang, Gaofei; Kwan, Alex M. H.; Wong, Roy K. Y.; Lei, Jiacheng; Su, R. Y.; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Kevin J.
Article

Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

IEEE Transactions on Electron Devices, v. 64, (6), June 2017, p. 2592-2598
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing
Article

Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7933267, p. 937-940
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing
Article

Enhanced Dielectric Deposition on Single-Layer MoS2 with Low Damage Using Remote N2 Plasma Treatment

Nanotechnology, v. 28, (17), April 2017, article number 175202
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Tang, Gaifei; Lei, Jiacheng; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Jing
Article

GaN-on-Si Power Technology: Devices and Applications

IEEE Transactions on Electron Devices, v. 64, (3), March 2017, p. 779-795, Article number 7862945
Chen, Kevin Jing; Häberlen, Oliver; Lidow, Alex; Tsai, Chun Lin; Ueda, Tetsuzo; Uemoto, Yasuhiro; Wu, Yifeng
Article

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

IEEE Electron Device Letters, v. 38, (8), August 2017, article number 7955040, p. 1075-1078
Liu, Shaofei; Wang, Maojun; Tao, Ming; Yin, Ruiyuan; Gao, Jingnan; Sun, Haozhe; Lin, Wei; Wen, Cheng P.; Wang, Jinyan; Wu, Wengang; Hao, Yilong; Zhang, Zhaofu; Chen, Jing; Shen, Bo
Article

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

IEEE Transactions on Electron Devices, v. 64, (12), December 2017, article number 8093740, p. 5048-5056
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Wei, Jin; Sheng, Kuang; Chen, Jing
Article

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

IEEE Transactions on Power Electronics, v. 32, (7), July 2017, article number 7570254, p. 5539-5549
Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Jing
Article

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7932959, p. 929-932
Hua, Mengyuan; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Cai, Xiangbin; Wang, Ning; Chen, Jing
Article

Remote N2 Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS2 MOSFET

Applied Physics Express, v. 10, (12), December 2017, article number 125201
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Chen, Jing
Article

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

IEEE Transactions on Electron Devices, v. 64, (10), October 2017, p. 4036-4043
Zhang, Zhaofu; Li, Baikui; Qian, Qingkai; Tang, Xi; Hua, Mengyuan; Huang, Baoling; Chen, Kevin J.
Article

SiC Trench MOSFET with Self-biased p-shield for Low RON-SP and Low OFF-state Oxide Field

IET Power Electronnics, v. 10, (10), 18 August 2017, p. 1208-1213
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang
Article

Trapping Mechanisms in Insulated-Gate GaN Power Devices: Understanding and Characterization Techniques

Physica Status Solidi (A) Applications and Materials Science, v. 214, (3), March 2017, article number 1600607
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Chen, Kevin J
Article

Fluorine-Implanted Enhancement-Mode Transistors

Power GaN Devices: Materials, Applications and Reliability / Editors: Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Switzerland : Springer International Publishing, 2017, p. 273-293, Series: Power Electronics and Power Systems
Chen, Kevin Jing
Book chapter

Recent Progress in GaN-on-Si HEMT

Handbook of GaN Semiconductor Materials and Devices / Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen, editors. Boca Raton : CRC Press, 2017, p. 347-366, Book series: Optics and Optoelectronics
Chen, Kevin Jing; Shu, Yang
Book chapter

An Analytical Model for False Turn-on Evaluation of GaN Transistor in Bridge-Leg Configuration

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7854840
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J.
Conference paper

Buffer Trapping-induced RON Degradation in GaN-on-Si Power Transistors: Role of Electron Injection From Si Substrate

Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988903, p. 101-104
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Sheng, Kuang; Chen, Kevinjing
Conference paper

Characterization and analysis of dynamic RON of GaN-on-Si lateral power devices with grounded and floating Si substrate


Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing
Conference paper

Charge Storage Effect in SiC Trench MOSFET with a Floating p-shield and its Impact on Dynamic Performances

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988985, p. 387-390
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing
Conference paper

Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack


He, Jiabei; Hua, Mengyuan; Tang, Gaofei; Zhang, Zhaofu; Chen, Kevin J.
Conference paper

Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique


Bao, Qilong; Li, yang; Zhang, Zhaofu; Qian, Qingkai; Lei, Jiacheng; Tang, Gaofei; Huang, Baoling; Chen, Kevin Jing
Conference paper

High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, p. 89-92
Hua, Mengyuan; Zhang, Zhaofu; Qian, Qingkai; Wei, Jin; Bao, Qilong; Chen, Jing
Conference paper

High-speed Power MOSFET with Low Reverse Transfer Capacitance Using a Trench/planar Gate Architecture

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988956, p. 331-334
Wei, Jin; Wang, Yuru; Zhang, Meng; Jiang, Huaping; Chen, Jing
Conference paper

Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988920, p. 235-238
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing
Conference paper

Integration of LPCVD-SiNx Gate Dielectric with Recessed-Gate E-Mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime

Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838388, p. 10.4.1-10.4.4
Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lei, Jiacheng; Tang, Gaofei; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing
Conference paper

Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer


Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Jing
Conference paper

Maximizing the Performance of 650 v p-GaN Gate HEMTs: Dynamic Ron Characterization and Gate-Drive Design Considerations

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7855231
Wang, Hanxing; Xie, Ruiliang; Liu, Cheng; Wei, Jin; Tang, Gaofei; Chen, Jing
Conference paper

Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform


Tang, Gaofei; Wang, Hanxing; Lei, Jiacheng; Chen, kevin jing
Conference paper

Nitridation of GaN Surface for Power Device Application: A First-Principles Study

Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838552, p. 36.2.1-36.2.4
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Huang, Baoling; Chen, Kevin Jing
Conference paper

PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer


Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Conference paper

Role of Shallow Surface Traps and Polarization Charges in Nitride-based Passivation for AlGaN/GaN Heterojunction FET

2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016 - Conference Proceedings, January 2017, article number 7803763, p. 85-88
Yang, Song; Tang, Zhikai; Lu, Yunyou; Jiang, Qimeng; Zhang, Anping; Chen, Kevin J
Conference paper

Switching Transient Analysis for Normally-off GaN Transistors With p-GaN Gate in a Phase-leg Circuit

2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, v. 2017-January, November 2017, article number 8095810, p. 399-404
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Wang, Hanxing; Tian, Mofan; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing
Conference paper

TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Conference paper
2016 24

Analysis of a four generation family reveals the widespread sequence-dependent maintenance of allelic DNA methylation in somatic and germ cells

Scientific Reports, v. 6, January 2016, article number 19260
Tang, Aifa; Huang, Yi; Li, Zesong; Wan, Shengqing; Mou, Lisha; Yin, Guangliang; Li, Ning; Xie, Jun; Xia, Yudong; Li, Xianxin; Luo, Liya; Zhang, Junwen; Chen, Shen; Wu, Song; Sun, Jihua; Sun, Xiaojuan; Jiang, Zhimao; Chen, Jing; Li, Yingrui; Wang, Jian; Wang, Jun; Cai, Zhiming; Gui, Yaoting
Article

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain

IEEE Transactions on Electron Devices, v. 63, (7), July 2016, Article number 7478098, p. 2831-2837
Tang, Xi; Li, Baikui; Zhang, Zhaofu; Tang, Gaofei; Wei, Jin; Chen, Jing
Article

Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

IEEE Electron Device Letters, v. 37, (3), March 2016, article number 7386610, p. 265-268
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing
Article

Dynamic Gate Stress-induced VTH Shift and its Impact on Dynamic RON in GaN MIS-HEMTs

IEEE Electron Device Letters, v. 37, (2), February 2016, article number 7347343, p. 157-160
Yang, Shu; Lu, Yunyou; Wang, Hanxing; Liu, Shenghou; Liu, Cheng; Chen, Jing
Article

Gate stack engineering for GaN lateral power transistors

Semiconductor Science and Technology, v. 31, (2), February 2016, article number 024001
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Jing
Article

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7590090, p. 1617-1620
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei; Sun, Qian; Zhang, Zhaofu; Chen, Kevin J.
Article

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Scientific Reports, v. 6, June 2016, article number 27676
Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.
Article

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

IEEE Electron Device Letters, v. 37, (11), November 2016, article number 7567511, p. 1458-1461
Wei, Jin; Zhang, Meng; Jiang, Huaping; Cheng, Ching-Hsiang; Chen, Jing
Article

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 13, (5-6), May 2016, p. 365-368
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Jing
Article

Optoelectronic devices on AlGaN/GaN HEMT platform

Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1213-1221
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Jing
Article

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

IEEE Transactions on Electron Devices, v. 63, (6), June 2016, article number 7466844, p. 2469-2473
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing
Article

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

IEEE Photonics Technology Letters, v. 28, (24), December 2016, article number 7725988, p. 2803-2806
Li, Baikui; Tang, Xi; Tang, Gaofei; Wei, Jin; Wang, Jiannong; Chen, Jing
Article

Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices

Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 861-867
Chen, Jing; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan
Article

面向高性能GaN基功率電子的器件物理研究

中國科學:物理學 力學 天文學=Scientia Sinica: Physica, Mechanica et Astronomica, v. 46, (10), July 2016, article number 107307
黃森; 杨树; 唐智凯; 化梦媛; 王鑫華; 魏珂; 包琦龍; 劉新宇; 陳敬
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Comparison of SiNx and AlN Passivations for AlGaN/GaN HEMTs

ECS Meeting Abstracts, v. MA2016-01, (24), 2016, p. 1220
Yang, Song; Lei, Lei; Yu, Kun; Zhang, Anping; Chen, Jing
Conference paper

Compatibility of AlN/SiNx Passivation with High-Temperature Process

CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, article number 9.3, p. 233-236
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing
Conference paper

Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT


Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing
Conference paper

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

Technical Digest - International Electron Devices Meeting, IEDM, 2016-February, February 2016 , article number 7409662, p. 9.4.1-9.4.4
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Zhang, Zhaofu; Tang, Gaofei; Liu, Cheng; Lu, Yunyou; Hua, Mengyuan; Chen, Jing
Conference paper

Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, July 2017, article number 7998839, p. 61-64
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin J
Conference paper

First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom


Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Lei, Jiacheng; Huang, Baoling; Chen, Kevin Jing
Conference paper

Impact of VTH Shift on RON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), v. 2016-July, July 2016, article number 7520828, p. 263-266
Yang, Shu; Lu, Yunyou; Liu, Shenghou; Wang, Hanxing; Liu, Cheng; Chen, Jing
Conference paper

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520770, p. 31-34
Tang, Xi; Li, Baikui; Wang, Hanxing; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing
Conference paper

Performance Enhancement and Characterization Techniques for GaN Power Devices

2016 Compound Semiconductor Week (CSW)[ includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 2016, article number 7528840
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Longobardi, Giorgia; Udrea, Florin; Chen, Jing
Conference paper

Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520787, p. 99-102
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing
Conference paper
2015 36

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

IEEE Transactions on Electron Devices, v. 62, (4), April 2015, article number 7039245, p. 1143-1149
Wang, Han Xing; Kwan, Alex Man Ho; Jiang, Qimeng; Chen, Kevin Jing
Article

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7103310, p. 1870-1878
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Chen, Kevin Jing
Article

An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, v. 34, (9), September 2015, article number 7061385, p. 1401-1414
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin J.; Wu, Xiaowen; Wang, Zhehui; Yang, Peng; Duong, Luan Huu Kinh
Article

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

IEEE Transactions on Electron Devices, v. 62, (10), October 2015, article number 7234887, p. 3215-3222
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen,Jing Kevin
Article

Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Applied Physics Express, v. 8, (6), June 2015, article number 064101
Lu, Yunyou; Jiang, Qimeng; Tang, Zhikai; Yang, Shu; Liu, Cheng; Chen, Kevin Jing
Article

Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation

IEEE Electron Device Letters, v. 36, (8), August 2015, p. 760-762
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J.
Article

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

IEEE Electron Device Letters, v. 36, (5), May 2015, article number 7055356, p. 448-450
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing
Article

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123580, p. 754-756
Huang, Sen; Liu, Xinyu; Zhang, Jinhan; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Zheng, Yingkui; Liu, Honggang; Jin, Zhi; Zhao, Chao; Liu, Cheng; Liu, Shenghou; Yang, Shu; Zhang, Jincheng; Hao, Yue; Chen, Kevin Jing
Article

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters, v. 106, (5), February 2015, article number 051605
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Shen, Bo; Chen, Kevin Jing
Article

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

IEEE Electron Device Letters, v. 36, (12), December 2015, article number 7295542, p. 1287-1290
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Lu, Yunyou; Liu, Cheng; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Article

Normally OFF Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

IEEE Transactions on Electron Devices, v. 62, (3), Mar 2015, article number 7015556, p. 821-827
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin J.
Article

O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied Physics Letters, v. 106, (3), January 2015, article number 033507
Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen,Jing Kevin
Article

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Applied Physics Letters, v. 106, (9), March 2015, article number 093505
Li, Baikui; Tang, Xi; Chen, Kevin J.
Article

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123614, p. 757-759
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Huang, Sen; Chen, Kevin Jing; Shen, Bo
Article

Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7154486, p. 2475-2480
Zhang, Chuan; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo
Article

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

IEEE Electron Device Letters, v. 36, (4), April 2015, article number 7042345, p. 318-320
Liu, Cheng; Yang, Shu; Liu, Shenghou; Tang, Zhikai; Wang, Hanxing; Jiang, Qimeng; Chen, Kevin J.
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650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015-June, June 2015, article number 7123434, p. 241-244
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Lu, Yunyou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
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Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices


Tang, Xi; Li, Baikui; Chen, Kevin J.
Conference paper

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices


Tang, Xi; Li, Baikui; Chen, Kevin J.
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Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study


Yang, Song; Tang, Zhikai; Lu, Yunyou; Zhang, Anping; Chen, Kevin J.
Conference paper

First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line


Yuan, Li; Xiao, Xia; Tang, Longjuan; Li, Huahua; Jiang, Yuanqi; Chen, Kevin J.; Yen, Allen
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Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs


Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing
Conference paper

Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs


Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J.
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High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer


Liu, Shenghou; Yang, Shu; Liu, Cheng; Lu, Yunyou; Chen, Kevin J.
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III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances

2015 IEEE International Electron Devices Meeting (IEDM), The Institute of Electrical and Electronics Engineers, 2015, p. 3531-3534
Tang, Xi; Li, Baikui; Lu, Yunyou; Wang, Hanxing; Liu, Cheng; Wei, Jin; Chen, Jing
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Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier


Liu, Cheng; Wei, Jin; Liu, Shenghou; Wang, Hanxing; Tang, Zhikai; Yang, Shu; Chen, Jing
Conference paper

Improved Thermal Stabilities in Normally-Off GaN MIS-HEMTs

2015 CS ManTech Digest / CS Mantech. Beaverton, USA : CS Mantech, 2015, p. 159-162
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Chen, Jing Kevin
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Nitridation Interfacial-layer Technology for Enhanced Stability in GaN-based Power Devices

RFIT 2015 Proceedings, IEEE Microwave Theory and Techniques Society (IEEE MTT-S), 2015, p. 220-222
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J
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Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015) /IEEE. New York, USA : Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 213-216
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing
Conference paper

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform


Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Kevin J.
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On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015) / IEEE. Piscataway, NJ : Institute of Electrical and Electronics Engineers, 2015, p. 201-204
Tang, Xi; Li, Baikui; Chen, Kevin Jing
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Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment


Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin J.
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Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform

International Electron Devices Meeting, IEDM, v. 2015, February 2015, article number 113077
Li, Baikui; Tang, Xi; Jiang, Qimeng; Lu, Yunyou; Wang, Hanxing; Wang, Jiannong; Chen, Kevin Jing
Conference paper

Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform


Tang, Xi; Jiang, Qimeng; Wang, Hanxing; Li, Baikui; Chen, Kevin J.
Conference paper

Technology Challenges of GaN Heterojunction Power Devices


Chen, Kevin J.
Conference paper

Toward reliable MIS- and MOS-gate structures for GaN power devices


Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Tang, Zhikai
Conference paper
2014 28

900 V/1.6 mΩ · cm2 normally off Al 2O3/GaN MOSFET on silicon substrate

IEEE Transactions on Electron Devices, v. 61, (6), 2014, article number 6807793, p. 2035-2040
Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo
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A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform

IEEE Transactions on Electron Devices, v. 61, (8), 2014, article number 6832561, p. 2970-2976
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin Jing
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A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6722951, p. 762-768
Jiang, Qimeng; Tang, Zhikai; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
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Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer

IEEE Electron Device Letters, v. 35, (7), 2014, article number 6823096, p. 723-725
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing
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AlN/GaN Heteostructure TFTs with Plasma Enhanced Atomic Layer Deposition of Epitaxial AlN Thin Film

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 953-956
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen, Kevin Jing
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Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6716042, p. 755-761
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun
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GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing
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High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications

Solid-State Electronics, v. 91, 2014, p. 19-23
Zhou, Qi; Yang, Shu; Chen, Wanjun; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
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High-fMAX high Johnson's figure-of-merit 0.2-μ m gate algan/gan HEMTs on silicon substrate with AlN}/SiNx passivation

IEEE Electron Device Letters, v. 35, (3), 2014, article number 6710223, p. 315-317
Huang, Sen; Wei, Ke; Liu, Guoguo; Zheng, Yingkui; Wang, Xinhua; Pang, Lei; Kong, Xin; Liu, Xinyu; Tang, Zhikai; Yang, Shu; Jiang, Q.; Chen, Kevin Jing
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Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

IEEE Transactions on Electron Devices, v. 61, (8), August 2014, article number 6851170, p. 2785-2792
Tang, Zhikai; Huang, Sen; Tang, Xi; Li, Baikui; Chen, Kevin Jing
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Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Applied Physics Letters, v. 104, (1), January 2014, article number 013504
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Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Applied Physics Letters, v. 105, (22), December 2014, article number 223508
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
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P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Applied Physics Letters, v. 105, (3), July 2014, article number 032105
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Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

IEEE Transactions on Electron Devices, v. 61, (11), November 2014, article number 6902778, p. 3808-3813
Jiang, Qimeng; Tang, Zhikai; Zhou, Chunhua; Yang, Shu; Chen, Kevin Jing
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Technology for III-N heterogeneous mixed-signal electronics

Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), 2014, p. 769-774
Chen, Kevin Jing; Kwan, Alex Man Ho; Jiang, Qimeng
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A GaN pulse width modulation integrated circuit

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, article number 6856068, p. 430-433
Wang, Hanxing; Ho, Alex Man Kwan; Jiang, Qimeng; Chen, Kevin Jing
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Analytical Modeling for AlGaN/GaN HEMTs


Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun
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Characterizing power delivery systems with on/off-chip voltage regulators for many-core processors

Proceedings -Design, Automation and Test in Europe, DATE, April 2014, article number 6800261
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin Jing; Wu, Xiaowen; Wang, Zhehui
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Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics


Chen, Kevin Jing; Yang, Shu; Tang, Zhikai; Huang, Sen
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High-temperature Low-damage Gate Recess Technique and Ozone-assisted ALD-grown Al2O3 Gate Dielectric for High-performance Normally-off GaN MIS-HEMTs

2014 IEEE International Electron Devices Meeting, v. 2015-February, (February), February 2015, article number 7047071, p. 17.4.1-17.4.4
Huang, Sen; Jiang, Qimeng; Wei, Ke; Liu, Guoguo; Zhang, Jinhan; Wang, Xinhua; Zheng, Yingkui; Sun, Bing; Zhao, Chaorong; Liu, Honggang; Jin, Zhi; Liu, Xinyu; Wang, Hongyue; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Yang, Shu; Tang, Zhikai; Zhang, Jincheng; Hao, Yue; Chen, Jing
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Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer


Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing
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Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode


Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing
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Nitridation Interfacial-layer Technology: Enabling Low Interface Trap Density and High Stability in III-nitride MIS-HEMTs

Proceedings - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), January 2014, article number 7021325
Yang, Shu; Chen, Kevin Jing
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Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, 2014, article number 6856024, p. 253-256
Wang, Maojun; Wang, Ye; Zhang, Chuan; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin Jing
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Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, article number 6856051, p. 362-365
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing
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Stability and Temperature Dependence of Dynamic RON in AlN-passivated AlGaN/GaN HEMT on Si Substrate

CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology 2014, GaAs Mantech, Incorporated, 2014, p. 97-100
Tang, Zhikai; Huang, Sen; Chen, Kevin Jing
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Surface Nitridation for Improved Dielectric/III−Nitride Interfaces in GaN MIS−HEMTs

Physica Status Solidi (A) Applications and Materials Science, v. 212, (5), May 2015, p. 1059-1065
Chen, Kevin J; Yang, Shu; Tang, Zhikai; Huang, Sen; Lu, Yunyou; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Li, Baikui
Conference paper

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

2014 IEEE International Electron Devices Meeting (IEDM 2014), 2014, article number 7047069, p. 17.2.1-17.2.4
Yang, Shu; Liu, Shenghou; Liu, Cheng; Tang, Zhikai; Lu, Yunyou; Chen, Kevin Jing
Conference paper
2013 40

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410335, p. 357-359
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
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5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Electronics Letters, v. 49, (3), January 2013, p. 221-222
Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun
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600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601638, p. 1373-1375
Tang, Zhikai; Jiang, Qimeng; Lu, Yunyou; Huang, Sen; Yang, Shu; Tang, Xi; Chen, Kevin Jing
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A dominant-negative mutation of HSF2 associated with idiopathic azoospermia

Human genetics, v. 132, (2), February 2013, p. 159-165
Mou, Lisha; Wang, Yadong; Li, Honggang; Huang, Yi; Jiang, Tao; Huang, Weiren; Li, Zesong; Chen, Jing; Xie, Jun; Liu, Yuchen; Jiang, Zhimao; Li, Xianxin; Ye, Jiongxian; Cai, Zhiming; Gui, Yaoting
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A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365744, p. 30-32
Kwan, Alex Man Ho; Chen, Kevin Jing
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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

Japanese Journal of Applied Physics, v. 52, (4 PART 2), April 2013, article number 04CF06
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Owen, Man Hon Samuel; Liu, Wei; Chi, Dong Zhi; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia
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AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

Semiconductor Science and Technology, v. 28, (7), July 2013, article number 074015
Chen, Kevin Jing; Huang, Sen
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Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 10, (11), November 2013, p. 1397-1400
Lu, Yunyou; Yang, Shu; Jiang, Qimeng; Tang, Zhikai; Li, Baikui; Chen, Kevin Jing
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Device Technology for GaN Mixed-Signal Integrated Circuits

Japanese Journal of Applied Physics, v. 52, (11S), November 2013, article number 11NH05
Chen, Kevin J.; Kwan, Alex Man Ho
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Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Journal of Applied Physics, v. 114, (14), October 2013, article number 144509
Huang, Sen; Wei, Ke; Tang, Zhikai; Yang, Shu; Liu, Cheng; Guo, Lei; Shen, Bo; Zhang, Jinhan; Kong, Xin; Liu, Guoguo; Zheng, Yingkui; Liu, Xinyu; Chen, Kevin Jing
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Enhancement-Mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN02
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin J.
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Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs

IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6605590, p. 3040-3046
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing
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Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

Journal of Semiconductors, v. 34, (2), February 2013, article number 024003
Chen, W.; Zhang, J.; Zhang, B.; Chen, K.J.
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Genome-wide analysis of microRNAs expression profiling in patients with primary IgA nephropathy

Genome, v. 56, (3), March 2013, p. 161-169
Tan, Kuibi; Chen, Jing; Li, Wuxian; Chen, Yuyu; Sui, Weiguo; Zhang, Yang; Dai, Yong
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High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

Electronics Letters, v. 49, (22), October 2013, p. 1391-1393
Zhou, Qi; Chen, Wanjun; Zhou, Chunhua; Zhang, Bo; Chen, Kevin Jing
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High-performance normally-Off Al2O3 GaN MOSFET using a wet etching-based gate recess technique

IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601679, p. 1370-1372
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo
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High-Quality Interface in Al2O3/GaN/GaNAlGaNGaN MIS Structures with in Situ Pre-Gate Plasma Nitridation

IEEE Electron Device Letters, v. 34, (12), 2013, article number 6656897, p. 1497-1499
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Liu, Cheng; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing
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High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation

IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410341, p. 366-368
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
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Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs

Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN15
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin J.
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Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier

Semiconductor Science and Technology, v. 28, (1), January 2013, article number 015021
Chen, Wanjun; Zhang, Jing; Wang, Zhigang; Wei, Jin; Zhang, Bo; Chen, Jing
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Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

IEEE Electron Device Letters, v. 34, (2), 2013, article number 6403499, p. 193-195
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing
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Overexpression of Cyclooxygenase-1 Correlates with Poor Prognosis in Renal Cell Carcinoma

Asian Pacific journal of cancer prevention, v. 14, (6), 2013, p. 3729-3724
Yu, Zu-Hu; Zhang, Qiang; Wang, Ya-Dong; Chen, Jing; Jiang, Zhi-Mao; Shi, Min; Guo, Xin; Qin, Jie; Cui, Guang-Hui; Cai, Zhi-Ming; Gui, Yao-Ting; Lai, Yong-Qing
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Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

IEEE Electron Device Letters, v. 34, (9), 2013, article number 6556961, p. 1106-1108
Liu, Cheng; Liu, Shenghou; Huang, Sen; Chen, Kevin Jing
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Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

IEEE Transactions on Electron Devices, v. 60, (3), 2013, article number 6449310, p. 1075-1081
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing
Article

600 V High-performance AlGaN/GaN HEMTs with AlN/SiNx Passivation


Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
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600V 1.3mμ·cm2 Low-leakage Low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694478, p. 191-194
Tang, Zhikai; Huang, Edward Seng-jin; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
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AlN/GaN Heterostructure TFTs with the Polarized AlN Barrier Grown by 300 oC Plasma Enhanced Atomic Layer Epitaxy


Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen,Jing Kevin
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Degradation of Transient OFF-State Leakage Current in AlGaN/GaN HEMTs Induced by ON-State Gate Overdrive

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 928-931
Li, Baikui; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
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Device technology for GaN mixed-signal integrated circuits

Japanese Journal of Applied Physics, v. 52, (11 PART 2), November 2013, article number 11NH05
Chen, Kevin Jing
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GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-gating Measurements


Yang, Shu; Lu, Jianbiao; Huang, Sen; Zhou, Chunhua; Huang, Baoling; Chen, Kevin Jing
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GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing
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High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique


Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing
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High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications

ECS Transactions, v. 58, (4), 2013, p. 351-363
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
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High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates

Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa, Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 407-410
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
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Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation


Huang, Sen; Wei, Ke; Liu, Xinyu; Liu, Guoguo; Shen, Bo; Chen, Kevin Jing
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Mapping of Interface Traps in High-performance Al2O 3/AlGaN/GaN MIS-heterostructures Using Frequency- and Temperature-dependent C-V Techniques

Technical Digest - International Electron Devices Meeting, IEDM, 2013, article number 6724573, p. 6.3.1-6.3.4
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing
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Monolithically Integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-standby-power Start-up Circuit for Switched-mode Power Supplies

2013 IEEE International Electron Devices Meeting (IEDM 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 156-159
Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Lu, Yunyou; Yang, Shu; Liu, Cheng; Tang, Xi; Liu, Shenghou; Li, Baikui; Chen, Kevin Jing
Conference paper

Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices

1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 2013, article number 6695570, p. 92-95
Chen, Kevin Jing; Kwan, Man Ho; Tang, Zhikai
Conference paper

Technology for III-N Heterogeneous Mixed-signal Electronics


Chen, Kevin Jing
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Toward GaN-based Power Integrated Circuits


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2012 26

AlGaN/GaN MISHEMTs With High-kappa LaLuO3 Gate Dielectric

IEEE Electron Device Letters, v. 33, (7), July 2012, p. 979-981
Yang, Shu; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Zhou, Qi; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing
Article

AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 m Omega.cm(2) Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

Applied physics express, v. 5, (6), June 2012, article number 066501
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Liu, Wei; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia
Article

Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer

物理学报, v. 61, (24), 2012
Duan, Bao-Xing; Yang, Yin-Tang; Chen, Kevin J.
Article

Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement

Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 923-926
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J.
Article

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE Electron Device Letters, v. 33, (4), April 2012, p. 516-518
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J.
Article

Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs

IEEE Electron Device Letters, v. 33, (3), 2012, p. 354-356
Liu, S.; Cai, Y.; Gu, G.; Wang, J.; Zeng, C.; Shi, W.; Feng, Z.; Qin, H.; Cheng, Z.; Chen, K.J.; Zhang, B.
Article

Fe-doped InN layers grown by molecular beam epitaxy

Applied physics letters, v. 101, (17), October 2012
Wang, Xinqiang; Liu, Shitao; Ma, Dingyu; Zheng, Xiantong; Chen, Guang; Xu, Fujun; Tang, Ning; Shen, Bo; Zhang, Peng; Cao, Xingzhong; Wang, Baoyi; Huang, Sen; Chen, Kevin J.; Zhou, Shengqiang; Yoshikawa, Akihiko
Article

F離子注入新型Al0.25Ga0.75N/GaN HEMT器件耐壓分析

物理学报=Acta Physica Sinica, v. 61, (22), 2012, p. 408-414
段寶興; 楊銀堂; 陳敬
Article

High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy

Applied physics express, v. 5, (1), 2012, article number 015502
Wang, X.; Liu, S.; Ma, N.; Feng, L.; Chen, G.; Xu, F.; Tang, N.; Huang, S.; Chen, K.J.; Zhou, S.; Shen, B.
Article

Low Dynamic ON-Resistance in AlGaN/GaN-on-Si Power HEMTs Obtained by AlN Thin Film Passivation

ECS transactions, v. 50, (3), 2012, p. 343-351
Chen, Kevin Jing; Huang, Sen; Jiang, Qimeng
Article

Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage

IEEE Electron Device Letters, v. 33, (1), 2012, p. 38-40
Zhou, Q.; Chen, H.; Zhou, C.; Feng, Z.H.; Cai, S.J.; Chen, K.J.
Article

Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

Japanese Journal of Applied Physics, v. 51, no. 4S, April 2012, Article no. 04DF02
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
Article

Thermally activated pop-in and indentation size effects in GaN films

Journal of Physics D: Applied Physics, v. 45, (8), February 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
Article

UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction

Physica status solidi. A, Applications and materials science, v. 209, (11), November 2012, p. 2223-2228
Fu, Junxue; Luo, Yuan; Yobas, Levent; Chen, Kevin J.
Article

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1132-1134
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing
Article

AlD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs

27th Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH), Boston, Massachusetts, USA, Apr 23-26 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J.
Conference paper

AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High On-State Current and Low Off-State Leakage

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 417-420
Chen, Kevin Jing; Yuan, Li; Chen, Hongwei
Conference paper

AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

Proceedings of technical papers, 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Teo, K.L.; Chen, K.J.; Yeo, Y.C.
Conference paper

AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

2012 Int. Symp. on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr 23-25 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Chen, Kevin J.; Yeo, Y.C.
Conference paper

Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κ LaLuO3 gate dielectric

Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Yang, Shu; Huang, Sen; Zhao, Qing-Tai; Chen, Kevin Jing
Conference paper

Exploiting nanostructure-thin film interfaces in advanced sensor device configurations

Vacuum, v. 86, (6), 2012, p. 757-760
Jha, S.; Wang, H.E.; Kutsay, O.; Jelenković, E.V.; Chen, K.J.; Bello, I.; Kremnican, V.; Zapien, J.A.
Conference paper

Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology

4th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012), Aichi, Japan, Mar 4-8 2012
Chen, Kevin J.
Conference paper

Integrated Gate-protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs

2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, USA, December 10-12 2012
Kwan, Alex Man Ho; Liu, Xiaosen; Chen, Kevin J.
Conference paper

Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs

Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing
Conference paper

Normally-off AlGaN/GaN power tunnel-junction FETs

Physica status solidi. C, Current topics in solid state physics, v. 9, 2012, p. 871-874
Chen, Hongwei; Yuan, Li; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J.
Conference paper

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures

24th International Symposium on Power Semiconductor Devices and ICs, Bruges, Belgium, 2012, p. 245-248
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing
Conference paper
2011 28

A compact dual-band coupled-line balun with tapped open-ended stubs

Progress in electromagnetics research C. Pier C, v. 22, 2011, p. 109-122
Shao, J.; Zhang, H.; Chen, C.; Tan, S.; Chen, K.J.
Article

Characterization of High-κ LaLuO3 Thin Film Grown on AlGaN/GaN Heterostructure by Molecular Beam Deposition

Applied physics letters, v. 99, (18), October 2011, article number 182103
Yang, Shu; Huang, Sen; Chen, Hongwei; Schnee, Michael; Zhao, Qing-Tai; Schubert, Jurgen; Chen, Kevin Jing
Article

Efficient Parameter Extraction of Microwave Coupled-Resonator Filter Using Genetic Algorithms

International journal of RF and microwave computer-aided engineering, v. 21, (2), March 2011, p. 137-144
Zhang, Hualiang; Bowman, Samuel; Chen, Kevin J.
Article

Enhanced Electroluminescence from the Fluorine-plasma Implanted Ni/Au-AlGaN/GaN Schottky Diode

Applied Physics Letters, v. 99, (6), August 2011, article number 062101
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong
Article

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

Physica status solidi. A, Applications and materials science, v. 208, (2), February 2011, p. 434-438
Chen, Kevin J.; Zhou, Chunhua
Article

Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer

Electrochemical and solid-state letters, v. 14, (6), 2011, p. H229-H231
Chen, Hongwei; Wang, Maojun; Chen, Kevin J.
Article

Fabrication of GaN-based MEMS structures using dry-etch technique

纳米技术与精密工程=Nanotechnology and Precision Engineering, 9, 1, 2011
楊振川; 呂佳楠; 閆桂珍; 陳敬
Article

GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics

IEEE electron device letters, v. 32, (1), January 2011, p. 27-29
Liu, Xiaosen; Chen, Kevin J.
Article

Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor

IEEE electron device letters, v. 32, (9), September 2011, p. 1221-1223
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J.
Article

High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation

Japanese Journal of Applied Physics, v. 50, pt. 2, no. 4, April 2011, Article no. 04DF02
Kwan, Alex Man Ho; Wong, King Yuen; Liu, Xiaosen; Chen, Kevin J.
Article

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices, v. 58, (2), February 2011, article number 5658134, p. 460-465
Wang, Maojun; Chen, Jing
Article

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

IEEE electron device letters, v. 32, (4), April 2011, p. 482-484
Wang, Maojun; Chen, Kevin J.
Article

Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes

Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2479-2482
Fu, J.; Chen, K.J.
Article

Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors

IEEE electron device letters, v. 32, (3), March 2011, p. 303-305
Yuan, Li; Chen, Hongwei; Chen, Kevin J.
Article

ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Journal of applied physics, v. 110, (11), December 2011
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J.
Article

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

AIP Advances, v. 1, (3), August 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
Article

Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: An XPS study

Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2200-2203
Huang, S.; Chen, H.; Chen, K.J.
Article

Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors

Japanese Journal of Applied Physics, v. 50, no. 11R, 2011, Article no. 110202
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J.
Article

A Novel Normally-off GaN Power Tunnel Junction FET

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2011, p. 276-279
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J.
Conference paper

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Key engineering materials, v. 483, 2011, p. 14-17
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J.
Conference paper

Characterization of GaN cantilevers fabricated with GaN-on-silicon platform

Proceedings, IEEE micro electro mechanical systems, 2011, p. 388-391
Lv, J.N.; Yang, Z.C.; Yan, G.Z.; Cai, Y.; Zhang, B.S.; Chen, K.J.
Conference paper

Design of dual-band coupled-line balun

Final Program and Book of Abstracts - iWAT 2011: 2011 IEEE International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials, 2011, p. 332-335
Zhang, H.; Shao, J.; Tan, S.; Chen, K.J.
Conference paper

Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode

AIP Conference Proceedings, v. 1399, (113), December 2011, p. 113-114
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong
Conference paper

Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT

69th Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, S.J.; Chen, Kevin J.
Conference paper

Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology


Chen, Jing; Yuan, Li; Wang, Maojun; Chen, Hongwei; Huang, Sen; Zhou, Qi; Zhou, Chunhua; Li, Baikui; Wang, Jiannong
Conference paper

Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), Washington, DC, December 5-7 2011
Zhou, Qi; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
Conference paper

Stealth Electrode Dielectrophoresis: Microspheres Manipulation by Patterned 2-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterostructures

ISMM 2011 in Conjunction with the KBCS Spring Meeting, Seoul, Korea, from June 2 to 4, 2011. Abstract: F3-056
Fu, Junxue; Yobas, Levent; Chen, Kevin J.
Conference paper

The role of fluorine ions in GaN heterojunction transistors: Applications and stability

Proceedings of SPIE--the international society for optical engineering, v. 7939, 2011
Chen, K.J.
Conference paper
2010 26

18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation

IEEE Electron Device Letters, v. 31, (12), 2010, p. 1386-1388
Feng, Z.H.; Zhou, R.; Xie, S.Y.; Yin, J.Y.; Fang, J.X.; Liu, B.; Zhou, W.; Chen, K.J.; Cai, S.J.
Article

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

IEEE electron device letters, v. 31, (1), 2010, JAN, p. 5-7
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J.
Article

AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

Electronics letters, v. 46, (6), 2010, MAR 18, p. 445-U92
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J.
Article

Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers

IEEE Transactions on Electron Devices, v. 57, (8), 2010, p. 1924-1929
Wong, K.Y.; Chen, W.; Chen, K.J.
Article

Determining phonon deformation potentials of hexagonal GaN with stress modulation

Journal of Applied Physics, v. 108, (12), December 2010, article number 123520
Lu, Junyong; Wang, Zhijia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
Article

Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN/GaN heterostructures

Applied physics letters, v. 96, (23), 2010, JUN 7
Huang, Sen; Chen, Hongwei; Chen, Kevin J.
Article

GaN smart power IC technology

PHYSICA STATUS SOLIDI b-basic SOLID STATE PHYSICS, v. 247, (7), 2010, JUL, p. 1732-1734
Wong, King-Yuen; Chen, Wanjun; Liu, Xiaosen; Zhou, Chunhua; Chen, Kevin J.
Article

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Electronics letters, v. 46, (24), November 2010, p. 1626-1627
Chen, W.; Zhou, C.; Chen, K.J.
Article

Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing

Journal OF PHYSICAL CHEMISTRY C, v. 114, (17), 2010, MAY 6, p. 7999-8004
Jha, Shrawan K.; Liu, Chao Ping; Chen, Zhen Hua; Chen, Kevin J.; Bello, Igor; Zapien, Juan A.; Zhang, Wenjun; Lee, Shuit-Tong
Article

Integrated Voltage Reference Generator for GaN Smart Power Chip Technology

IEEE transactions on electron devices, v. 57, (4), 2010, APR, p. 952-955
Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J.
Article

Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

PHYSICA STATUS SOLIDI a-applications and Materials science, v. 207, (6), 2010, JUN, p. 1332-1334
Wang, Maojun; Cheng, Chung Choi; Beling, Chris D.; Fung, Stevenson; Chen, Kevin J.
Article

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Electronics letters, v. 46, (18), 2010, SEP 2, p. 1280-U63
Chang, C.T.; Hsu, T.H.; Chang, E.Y.; Chen, Y.C.; Trinh, H.D.; Chen, K.J.
Article

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

IEEE transactions on electron devices, v. 57, (7), 2010, JUL, p. 1492-1496
Wang, Maojun; Chen, Kevin J.
Article

Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

IEEE electron device letters, v. 31, (7), 2010, JUL, p. 668-670
Zhou, Chunhua; Chen, W.; Piner, Edwin L.; Chen, Kevin J.
Article

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

IEEE microwave and wireless components letters, v. 20, (5), 2010, MAY, p. 277-279
Zhou, Qi; Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J.
Article

AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J.
Conference paper

Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: Evidence of Fermi level de-pinning at Ni/AlGaN interface

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), July 2010, p. 1961-1963
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong
Conference paper

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology

The 37th Int. Symp. On Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010
Chen, Kevin J.
Conference paper

Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Chen, Hongwei; Wang, Maojun; Chen, Kevin J.
Conference paper

GaN smart discrete power devices

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1303-1306
Chen, K.J.; Zhou, C.
Conference paper

GaN Smart Power IC Technologies

IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010
Chen, Kevin J.
Conference paper

Reliability of Enhancement-mode AlGaN/GaN HEMTs Under ON-State Gate Overdrive

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J.
Conference paper

Residual stress characterization of GaN microstructures using bent-beam strain sensors

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, 2010, p. 138-140
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J.
Conference paper

Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation

Device Research Conference - Conference Digest, DRC, 2010, p. 137-138
Chen, H.; Wang, M.; Chen, K.J.
Conference paper

Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2010, p. 343-346
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J.
Conference paper

Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology

Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium, 2010
Liu, Xiaosen; Chen, Kevin J.
Conference paper
2009 16

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Applied physics letters, v. 94, (6), 2009, FEB 9
Wang, M.J.; Yuan, L.; Cheng, C.C.; Beling, C.D.; Chen, K.J.
Article

Design of dual-band rat-race couplers

IET Microwaves Antennas & Propagation, v. 3, (3), 2009, APR, p. 514-521
Zhang, H.; Chen, K.J.
Article

Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

Journal of applied physics, v. 105, (8), 2009, APR 15
Wang, M.J.; Yuan, L.; Chen, K.J.; Xu, F.J.; Shen, B.
Article

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

IEEE electron device letters, v. 30, (10), 2009, OCT, p. 1045-1047
Lv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Lin, Wenkui; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
Article

Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode

Applied Physics Letters, v. 95, (23), December 2009, article number 232111
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong
Article

Microbridge tests on gallium nitride thin films

Journal of Micromechanics and Microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, Zhiying; Lu, Junyong; Wang, Zhijia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi
Article

Silicon-on-Organic Integration of a 2.4-GHz VCO Using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology

IEEE transactions on components and packaging technologies, v. 32, (1), 2009, MAR, p. 191-196
Huo, Xiao; Xiao, Guo-Wei; Chan, Philip C.H.; Chen, Kevin J.
Article

Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

IEEE electron device letters, v. 30, (5), 2009, MAY, p. 430-432
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J.
Article

Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy

Physica status solidi. C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S952-S955
Wang, M.; Yuan, L.; Xu, F.; Shen, B.; Chen, K.J.
Article

Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits

Solid-state electronics, v. 53, (1), 2009, JAN, p. 1-6
Wang, Ruonan; Cai, Yong; Chen, Kevin J.
Article

Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications

IEEE transactions on electron devices, v. 56, (12), 2009, DEC, p. 2888-2894
Wong, King-Yuen; Chen, Wanjun; Zhou, Qi; Chen, Kevin J.
Article

GaN smart power chip technology

2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, 2009, p. 403-407
Chen, K.J.
Conference paper

HEMT-compatible lateral field-effect rectifier using CF(4) plasma treatment

Physica status solidi C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S948-S951
Chen, Wanjun; Wong, King Yuen; Chen, Kevin J.
Conference paper

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009, 2009
Zhou, Q.; Wong, K.Y.; Chen, W.; Chen, K.J.
Conference paper

Integrated voltage reference and comparator circuits for GaN smart power chip technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2009, p. 57-60
Wong, K.Y.; Chen, W.; Chen, K.J.
Conference paper

Wide bandgap GaN smart power chip technology

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, 2009
Wong, King Yuen; Chen, Wanjun; Chen, Kelvin J.
Conference paper
2008 22

A second-order dual-band bandpass filter using a dual-band admittance inverter

Microwave and optical technology letters, v. 50, (5), 2008, MAY, p. 1184-1187
Zhang, Hualiang; Chen, Kevin J.
Article

Compact broadband dual-band bandpass filters using slotted ground structures

Progress in Electromagnetics research-pier, v. 82, 2008, p. 151-166
Wang, X.H.; Wang, B.Z.; Chen, K.J.
Article

Flip-chip integrated oscillator with reduced phase noise and enhanced output power by using DGS

红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2008, (06), 2008, p. 401-404
程知群; 李進; 毛祥根; 譚松; 陳敬
Article

Fluorine plasma ion implantation in AlGaN/GaN heterostructures: A molecular dynamics simulation study

Applied physics letters, v. 92, (10), 2008, MAR 10
Yuan, L.; Wang, M.J.; Chen, K.J.
Article

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Japanese Journal of Applied Physics, v. 47, pt. 2, no. 4S, Apr 2008, p. 2820-2823
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Article

High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Applied physics letters, v. 92, (25), 2008, JUN 23
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Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Solid-State Electronics, v. 52, (5), May 2008, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E.
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Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures

Journal of applied physics, v. 104, (11), 2008, DEC 1
Yuan, L.; Wang, M.J.; Chen, K.J.
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Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma

Applied Physics Letters, v. 92, (8), February 2008, article number 082105
Li, Baikui; Ge, Weikun; Wang, Jiannong; Chen, Kevinjing
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The effect of physical design parameters on the RF and microwave performance of the BST thin film planar interdigitated varactors

Sensors and Actuators a-physical, v. 141, (2), 2008, FEB 15, p. 231-237
Zhang, J.; Zhang, H.; Lu, S.G.; Xu, Z.; Chen, K.J.
Article

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器

半导体学报=Chinese Journal of Semiconductors, v. 2008, 12, 2008, p. 2297-2300
程知群; 周肖鵬; 陳敬
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Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 543-546
Yuan, Li; Wang, Maojun; Chen, Kevin J.
Conference paper

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong
Conference paper

Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs

2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008, 2008, p. 94-96
Cheng, Z.; Zhou, X.; Chen, K.J.
Conference paper

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

2008 Proceedings of the ASME - 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008, 2008, p. 573-577
Lv, J.; Yang, Z.; Chen, K.J.
Conference paper

Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1074-1077
Chen, K.J.
Conference paper

High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment

9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing (China), 20-23 Oct 2008
Chen, Wanjun; Wong, King Yuen; Huang, Wei; Chen, Kevin J.
Conference paper

High-performance AlGaN/GaN HEMT-compatible lateral field-effect rectifiers

66th DRC Device Research Conference Digest, Santa Barbara, CA, United States, 23-25 June 2008, 2008, p. 287-288
Chen, Wanjun; Huang, Wei; Wong, King Yuen; Chen, Kevin Jing
Conference paper

Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, p. 1090-1093
Yuan, Li; Wang, Maojun; Chen, Kevin J.
Conference paper

Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 1-4
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J.
Conference paper

Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs

IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, USA, 15-17 December 2008, P.1-4
Wang, Maojun; Chen, Kevin J.
Conference paper

Temperature Dependence of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier

EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, p. 96-99
Wong, King-Yuen; Chen, Wanjun; Huang, Wei; Chen, Kevin J.
Conference paper
2007 24

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs

Microwave and Optical Technology Letters, v. 49, (6), June 2007, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing
Article

A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques, v. 55, (1), January 2007, article number 4061040, p. 23-29
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Article

A stub tapped branch-line coupler for dual-band operations

IEEE microwave and wireless components letters, v. 17, (2), 2007, FEB, p. 106-108
Zhang, Hualiang; Chen, Kevin J.
Article

A tunable bandstop resonator based on a compact slotted ground structure

IEEE transactions on microwave theory and techniques, v. 55, (9), 2007, SEP, p. 1912-1918
Wang, Xiao-Hua; Wang, Bing-Zhong; Zhang, Hualiang; Chen, Kevin J.
Article

DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

IEEE Transactions on Electron Devices, v. 54, (1), January 2007, article number 4039701, p. 2-10
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing
Article

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics, v. 46, (4S), April 2007, article number 2330, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

IEEE Electron Device Letters, v. 28, (5), May 2007, article number 4160009, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment

Physica Status Solidi (A) Applications and Materials Science, v. 204, (6), June 2007, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

Chinese Physics, v. 16, (11), November 2007, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing
Article

Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse

IEEE Electron Device Letters, v. 28, (3), March 2007, article number 4114584, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

Novel composite-channel Al0.3Ga0.7N/ Al0.05Ga0.95N/GaN HEMT MMIC VCO with low phase noise

JOURNAL OF INFRARED AND MILLIMETER WAVES, v. 26, (4), 2007, AUG, p. 241-245
Zhi-Qun, Cheng; Yong, Cai; Jie, Liu; Yu-Gang, Zhou; Zhi-Mei, Liu; Jing, Chen
Article

Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers

Applied physics letters, v. 90, (21), May 2007, article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

A microstrip bandpass filter with an electronically reconfigurable transmission zero

Proceedings of the 36th European Microwave Conference, EuMC 2006, 2007, p. 653-656
Zhang, H.; Chen, K.J.
Conference paper

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment

Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May
Conference paper

Fabrication of position-controllable GaN nanostructures

Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing
Conference paper

Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate

2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing
Conference paper

Low noise distributed amplifier using composite-channel Al 0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing
Conference paper

Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing
Conference paper

Microwave performance dependence of BST thin film planar interdigitated varactors on different substrates

Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 678-682
Zhang, J.; Zhang, H.; Chen, K.J.; Lu, S.G.; Xu, Z.
Conference paper

Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure

IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing
Conference paper

Quantum, power, and compound semiconductors - Reliability and characterization of power HEMTs

Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 379
Kizilyalli, I.C.; Chen, K.J.
Conference paper

Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper

SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Conference paper

Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure

2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper
2006 28

A physical model for on-chip spiral inductors with accurate substrate modeling

IEEE Transactions on Electron Devices, v. 53, (12), 2006, p. 2942-2948
Huo, X.; Chan, P.C.H.; Chen, K.J.; Luong, H.C.
Article

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

IEEE Electron Device Letters, v. 27, (1), January 2006, article number 1561439, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing
Article

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

IEEE microwave and wireless components letters, v. 16, (5), 2006, MAY, p. 249-251
Zhang, HL; Chen, KJ
Article

CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate

IEEE transactions on microwave theory and techniques, v. 54, (5), 2006, MAY, p. 2249-2255
Leung, LLW; Chen, KJ
Article

Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate

IEEE Trans. Advanced Packaging,, vol. 29, No. 3, pp. 496-503, Aug. 2006.
Leung, Lydia L.W.; Zhang, J.W.; Hon, W.C.; Chen, Kevin J.
Article

Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

IEEE Transactions on Electron Devices, v. 53, (9), September 2006, article number 1677855, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Article

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

IEEE Transactions on Electron Devices, v. 53, (6), June 2006, article number 1637646, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Article

Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage

IEICE Transactions on Electronics, v. E89-C , (7), July 2006, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Article

Enhancement-mode Si3N4/AlGaN/GaN MISHFETs

IEEE Electron Device Letters, v. 27, (10), October 2006, article number 1704902, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing
Article

Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

Physica Status Solidi (A) Applications and Materials Science, v. 203, (7), May 2006, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Article

GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS

Sensors and Actuators a-physical, v. 130-131, (SI), August 2006, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J.
Article

Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors

Applied Physics Letters, v. 88, (12), March 2006, article number 122113
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May
Article

Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

Applied Physics Letters, v. 88, (4), January 2006, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Article

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IEEE transactions on microwave theory and techniques, v. 54, (3), 2006, MAR, p. 1090-1095
Zhang, HL; Chen, KJ
Article

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment

IEEE Transactions on Electron Devices, v. 53, (9), September 2006, article number 1677857, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

IEEE Electron Device Letters, v. 27, (8), August 2006, article number 1661714, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Article

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper

AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch

Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing
Conference paper

Analysis of SAW filter fabricated on anisotropic substrate using finite-difference time-domain method

Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 96-99
Wong, K.Y.; Tam, W.Y.; Chen, K.J.
Conference paper

Compact on-chip three-dimensional electromagnetic bandgap structure

IEEE MTT-S International Microwave Symposium Digest, 2006, p. 594-597
Leung, L.L.W.; Chen, K.J.
Conference paper

Core Technologies for III-Nitride Integrated Microsensors

6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May
Conference paper

Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique

Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Conference paper

GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching

21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May
Conference paper

GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC

2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper

Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor

Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M.
Conference paper

Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper

Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment

Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Conference paper
2005 27

A tri-section stepped-impedance resonator for cross-coupled bandpass filters

IEEE microwave and wireless components letters, v. 15, (6), 2005, JUN, p. 401-403
Zhang, HL; Chen, KJ
Article

AlGaN-GaN double-channel HEMTs

IEEE Transactions on Electron Devices, v. 52, (4), April 2005, article number 1408143, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May
Article

AlGaN-GaN HEMTs on patterned silicon (111) substrate

IEEE Electron Device Letters, v. 26, (3), March 2005, article number 1397836, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael
Article

Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

IEEE Electron Device Letters, v. 26, (8), August 2005, article number 1468209, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Article

CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF microwave passive components on silicon substrate

Journal of micromechanics and microengineering, v. 15, (2), 2005, FEB, p. 328-335
Zhang, JW; Hon, WC; Leung, LLW; Chen, KJ
Article

Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition

Journal of Electronic Materials, v. 34, (1), January 2005, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lu, Zhengdong; Chen, Kevin Jing; Lau, Kei May
Article

Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates

IEEE Electron Device Letters, v. 26, (12), December 2005, article number 1546137, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May
Article

Highly linear Al0.3Ga0.7N-Al0.05Ga0.95N-GaN composite-channel HEMTs

IEEE Electron Device Letters, v. 26, (3), March 2005, article number 1397841, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Article

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

IEEE Electron Device Letters, v. 26, (7), July 2005, article number 1458948, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Article

III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Applied Physics Letters, v. 86, (3), January 2005, article number 032109
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Article

Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition

Journal of Applied Physics, v. 97, (5), March 2005, article number 056103
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; van Gemmern, Philipp; Lin, Y. C.; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
Article

Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates

IEEE transactions on microwave theory and techniques, v. 53, (8), 2005, AUG, p. 2472-2480
Leung, LLW; Chen, KJ
Article

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

IEEE Electron Device Letters, v. 26, (7), July 2005, article number 1458947, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Article

Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET

Int. Workshop on Future Information Processing Technologies, Porvoo Finland / Sepetember 4-8 1995
Yamamoto, M.; Maezawa, K.; Chen, K.J.
Book chapter

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May
Conference paper

AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)

Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May
Conference paper

Bandpass and bandstop filters using CMOS-compatible micromachined edge-suspended coplanar waveguides

2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 91-94
Zhang, Hualiang; Zhang, Jinwen; Leung, Lydia L.W.; Chen, Kevin J.
Conference paper

Compact bandpass filters using slow-wave coplanar waveguide tri-section stepped-impedance resonators

2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 2298-2301
Hualiang, Zhang; Chen, Kevin J.
Conference paper

Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique

6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May
Conference paper

GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May
Conference paper

GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors

Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May
Conference paper

Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May
Conference paper

MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing
Conference paper

Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs

2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
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Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May
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Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT

6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
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Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May
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2004 18

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL
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Characterization of GaN grown on patterned Si(111) substrates

Journal of Crystal Growth, v. 272, (1-4), December 2004, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; van Gemmern, Philipp; Lin, Y.C.; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael
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CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies

IEEE electron device letters, v. 25, (6), 2004, JUN, p. 363-365
Chen, KJ; Hon, WC; Zhang, JW; Leung, LLW
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High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications

IEEE microwave and wireless components letters, v. 14, (9), 2004, SEP, p. 449-451
Chen, KJ; Chan, KW; Wong, MKW; Fok, NMK; Kwan, KKP; Fan, NCH
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Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate

IEEE transactions on components and packaging technologies, v. 27, (3), 2004, SEP, p. 507-512
Leung, LLW; Hon, WC; Chen, KJ
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Low-loss microwave filters on CMOS-grade standard silicon substrate with low-k BCB dielectric

Microwave and optical technology letters, v. 40, (1), 2004, JAN 5, p. 9-11
Leung, LLW; Chen, KJ; Huo, X.; Chan, PCH
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Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 627-630
Huo, X.; Chen, K.J.; Luong, H.; Chan, P.C.H.
Conference paper

Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
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Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 345-348
Jia, S.; Tsui, K.K.P.; Liao, X.; Chen, K.J.
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Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 1695-1698
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J.
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GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May
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High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate

Conference Proceedings- European Microwave Conference, v. 1, 2004, p. 45-48
Leung, L.L.W.; Zhang, J.; Hon, W.C.; Chen, K.J.
Conference paper

High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates

2004 4th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2004, 2004, p. 586-589
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J.
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High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications

Conference Proceedings- European Microwave Conference, v. 2, 2004, p. 519-522
Wong, M.; Fok, N.; Kwan, K.; Fan, N.; Chan, K.W.; Chen, K.J.
Conference paper

High-Q CMOS-compatible micromachined edge-suspended spiral inductors

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 263-266
Hon, W.C.; Zhang, J.; Leung, L.L.W.; Chen, K.J.
Conference paper

Microwave characterization of high aspect ratio through-wafer interconnect vias in silicon substrates

IEEE MTT-S International Microwave Symposium Digest, v. 2, 2004, p. 1197-1200
Leung, L.L.W.; Chen, K.J.
Conference paper

Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy

2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Wang, De Liang; Jia, S.; Chen, Jing Kevin; Dikme, Y.; Van Gemmern, P.; Lin, Y.C.; Heuken, Michael
Conference paper

Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT

2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May
Conference paper
2003 8

0.5 mu m silicon-on-sapphire metal oxide semiconductor field effect transistor for RF power amplifier applications

Japanese Journal of Applied Physics, v. 42, pt. 1, no. 8, Aug 2003, p. 4982-4986
Tsui, Kenneth; Chen, Kevin J.; Lam, Sang; Chan, Man Sun
Article

Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

IEEE journal of solid-state circuits, v. 38, (2), 2003, FEB, p. 312-318
Chen, KJ; Niu, GF
Article

A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs

International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L.
Conference paper

A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO
Conference paper

Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures

Physica Status Solidi C, v. 0, (7), December 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Conference paper

AlGaN/GaN/Graded-AlGaN double heterostructure HEMT

2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M.
Conference paper

Silicon-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology

Proceedings of the Custom Integrated Circuits Conference, 2003, p. 537-540
Huo, X.; Xiao, G.W.; Chen, K.J.; Chan, P.C.H.
Conference paper

Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors

2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May
Conference paper
2002 5

Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

IEEE electron device letters, v. 23, (9), 2002, SEP, p. 520-522
Huo, X.; Chen, KJ; Chan, PCH
Article

High-performance microwave passive components on silicon substrate

2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, p. 263-266
Chen, KJ; Huo, X.; Leung, LLW; Chan, PCH
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High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2002, p. 403-406
Huo, X.; Chen, KJ; Chan, PCH
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High-Q copper inductors on standard silicon substrate with a low-K BCB dielectric layer

IEEE MTT-S International Microwave Symposium digest, 2002, p. 513-516
Xiao, H.; Chen, KJ; Chan, PCH
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RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET

International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-20, pp. 594-595
Tsui, Kin Pun; Chen, Kevin J.; Lam, Sang; Chan, Mansun
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2001 1

On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer

European Microwave Conference at Milan, Italy
Leung, Lydia L.W.; Chen, Kevin J.; Huo, Xiao; Chan, Philip C.H.
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2000 2

Design and fabrication of reflective nematic displays with only one polarizer

Acta photonica sinica=光子学报, v. 29, (8), August 2000, p. 692-702
Yu, Feihong; Wang, Qian; Pan, Weimin; Chen, Jun; Guo, Haicheng
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Experimental realization of reflective bistable cholesteric liquid crystal displays with new driving scheme and low driving voltage

光子學報=Acta photonica sinica, v. 29, (5), May 2000, p. 420-425
Yu, Feihong; Wang, Qian; Pan, Weimin; Gong, Ye; Chen, Huiguang; Chen, Jun; Guo, Haicheng
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1999 2

A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips

1999 National Symposium on Circuit and Systems (NSCAS'99), November 24 1999
Zhang, Bin; Chen, K.J.; Ruan, Gang; Chen, Richard M.M.
Conference paper

Novel RTD-HEMT-RTD structure based on simulations

Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 1999, p. 178-181
Zhang, Bin; Chen, Kevin J.; Gang, Ruan; Chen, Richard M.M.
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1998 1

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output

IEEE journal of solid-state circuits, v. 33, (2), 1998, p. 268-274
Waho, T.; Chen, K.J.; Yamamoto, M.
Article
1997 5

A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications

Japanese Journal of Applied Physics, v. 36, pt. 1, no.3B, 1997, p. 1818-1821
Waho, Takao; Chen, Kevin J.; Yamamoto, Masafumi
Article

High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMT's)

IEEE Transactions on Electron Devices, v. 44, (11), November 1997, p. 2038-2040
Chen, Jing; Maezawa, Koichi; Yamamoto, Masafumi
Article

Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1628-1631
Niu, G.F.; Chen, K.J.; Chen, R.M.M.; Ruan, G.; Waho, T.; Maezawa, K.; Yamamoto, M.
Conference paper

Microwave-frequency operation of resonant tunneling high electron mobility transistors

Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 106-109
Chen, Kevin J.
Conference paper

Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

Asia-Pacific Microwave Conference Proceedings, APMC, v. 2, 1997, p. 529-532
Chen, Kevin J.
Conference paper
1996 15

A novel multiple-valued logic gate using resonant tunneling devices

IEEE electron device letters, v. 17, (5), 1996, p. 223-225
Waho, T.; Chen, K.J.; Yamamoto, M.
Article

An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices

IEEE electron device letters, v. 17, (6), 1996, p. 309-311
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M.
Article

Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts

IEICE transactions on electronics, v. E79C, (11), 1996, p. 1515-1523
Chen, K.J.; Maezawa, K.; Waho, T.; Yamamoto, M.
Article

Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors

IEEE electron device letters, v. 17, (5), 1996, p. 235-238
Chen, K.J.; Yamamoto, M.
Article

High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried gate technology

IEEE Trans. on Electron Devices, v. 43, (2),1996, Feb, p. 252-257
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, K.; Yamamoto, M.
Article

InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations

Japanese Journal of Applied Physics, v. 35, pt. 1, no. 2B, 1996, p. 1172-1177
Chen, Kevin J.; Maezawa, K.; Yamamoto, M.
Article

InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices

IEEE electron device letters, v. 17, (3), 1996, p. 127-129
Chen, K.J.; Maezawa, K.; Yamamoto, M.
Article

A novel functional logic gate using resonant-tunneling devices for multiple-valued loic applications

Extended Abst.1996 Int. Conf. on Solid State Devices and Materials (SSDM 96), Yokohama Japan, Auguest 1996 p. 740-742
Waho, T.; Chen, K.J.; Yamamoto, M.
Conference paper

A variable function logic gate based on controlled quenching of series connected resonant tunneling devices

Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, Sepetmber 1996, p.111
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M.
Conference paper

High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs)

Extended Abstracts of the 44th Spring Meeting (1996), The Jap. Soc. of Appl. Phys., Saitama Japan, March 1996, p. 1307, vol.3
Chen, K.J.; Maezawa, K.; Yamamoto, M.
Conference paper

InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuitapplications

Proc. of the 1996 IEICE general conference, Tokyo Japan, March 1996, p.123
Chen, K.J.; Akeyoshi, T.; Maezawa, K.
Conference paper

Literal gate using resonant-tunneling devices

International Symposium on Multiple-Valued Logic (ISMVL), 1996, p. 68-73
Waho, T.; Chen, K.J.; Yamamoto, M.
Conference paper

Novel ultrafast functional device: resonant tunneling high electron mobility transistor

Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 60-63
Chen, Kevin J.; Maezawa, K.; Yamamoto, M.
Conference paper

Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Annual Device Research Conference Digest, 1996, p. 170-171
Chen, Kevin J.; Waho, Takao; Maezawa, Koichi; Yamamoto, Masafumi
Conference paper

Quantum functional circuits using series-connected resonant tunneling devices

Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, September 1996, p. 251-252
Yamamoto, M.; Maezawa, K.; Waho, T.; Chen, K.J.
Conference paper
1995 8

Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

Electronics letters, v. 31, (11), 1995, p. 925-927
Chen, K.J.; Maezawa, K.; Arai, K.; Yamamoto, M.; Enoki, T.
Article

Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)

IEEE electron device letters, v. 16, (2), 1995, p. 70-73
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi
Article

Monostable-bistable transition logic elements (MOBILEs) based on monolithic integration of resonant tunneling diodes and FETs

Japanese Journal of Applied Physics, v. 34, pt. 1, no. 2B, 1995, p. 1199-1203
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi
Article

Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor

Applied physics letters, v. 67, 1995, p. 3608-3610
Chen, K.J.; Maezawa, K.; Yamamoto, M.
Article

A Unified BSIM I-V Model for Circuit Simulation

1995 International Device Research Symposium Proceeding, Virginia, December 1995, p. 603-606
Cheng, Y.; Hu,Chenming; Chen, Kevin J.; Chan, Man Sun; Jeng, M.C.; Liu, Z.H.; Huang, J.H.; Ko, Ping Keung
Conference paper

High-performance enhancement-mode InAlAs/InGaAs HEMT's using non-alloyed ohmic contact and Pt-based buried-gate

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1995, p. 428-431
Chen, Kevin J.; Enoki, Takatomo; Maezawa, Koichi; Arai, Kunihiro; Yamamoto, Masafumi
Conference paper

Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Technical digest - International Electron Devices Meeting, 1995, p. 379-382
Chen, Kevin J.; Maezawa, Koichi; Yamamoto, Masafumi
Conference paper

Reset-set flip-flop based on a novel approach to modulating resoant-tunneling current with FETs

Proc. of the 1995 IEICE general conference, Fukuoka Japan, March 1995, p. 130, vol. 2
Chen, K.J.; Akeyoshi, T.; Maezawa, K.
Conference paper
1994 2

Reset-set flipflop based on a novel approach of modulating resonant-tunneling current with FET gates

Electronics letters, v. 30, (21), 1994, p. 1805-1806
Chen, K.J.; Akeyoshi, T.; Maezawa, K.
Article

Monolithic integration of resonant tunneling diodes and FETs for Monostable-Bistable Transition Logic Elements (MOBILEs)

Extended Abstracts of the 55th Autumn Meeting (1994) The Jap. Soc. of Appl. Phys., Nagoya Japan, September 1994, p. 1059, vol. 3
Chen, K.J.; Akeyoshi, T.; Maezawa, K.
Conference paper
1993 2

Single transistor static memory cell: Circuit application of a new quantum transistor

Applied Physics Letters, v. 62, 1993, p. 96-98
Chen, K.J.; Yang, C.H.; Wilson, R.A.; Wood, C.E.C.
Article

Dynamics of energy and phase relaxation in ultrafast resonant tunneling transistors

American Physical Society annualmeeting, Seattle Washington, March, 1993
Chen, K.J.; Yang, C.H.; Wilson, R.A.
Conference paper
1992 5

Modeling of a new field-effect resonant tunneling transistor

Journal of Applied Physics, v. 71, (3), 1992, p. 1537-1539
Chen, K.J.; Yang, C.H.
Article

Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction

Applied Physics Letters, v. 60, (17), 1992, p. 2113-2115
Chen, K.J.; Yang, C.H.; Wilson, R.A.
Article

Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction

American Physical Society annual meeting, Indianapolis Indiana, March 1992
Chen, K.J.; Yang, C.H.; Wilson, R.A.
Conference paper

Resonant tunneling between two- and three-dimensions: modeling of tunneling diodes and tunneling transistors

American Physical Societyannual meeting, Cincinnati Ohio, March, 1991
Chen, K.J.; Yang, C.H.
Conference paper

Single transistor static memory cell: circuit application of a new quantum transistor

1992 International Conference on Solid State Devices and Materials (SSDM 92), Tsukuba Japan, 1992, p. 741-743
Yang, C.H.; Chen, K.J.; Wilson, R.A.; Wood, C.E.C.
Conference paper
1991 2

On the intrinsic bistability in resonant tunneling structures: observation of the area and temperature dependence of hysteresis

Journal of Applied Physics, v. 70, (4), 1991, p. 2473-2475
Chen, J.G.; Chen, K.J.; Wilson, R.A.; Johnson, W.; Yang, C.H.
Article

The I-V characteristics of doublebarrier resonant tunneling diodes: observation and calculation on their temperature dependence and asymmetry

Journal of Applied Physics, v. 70, (6), 1991, p. 3131-3136
Chen, K.J.; Chen, J.G.; Yang, C.H.; Wilson, R.A.
Article
Article 4

An Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps

IEEE Electron Device Letters, v. 44, (1), January 2023, p. 25-28
Wu, Yanlin; Wei, Jin; Wang, Maojun; Nuo, Muqin; Yang, Junjie; Lin, Wei; Zheng, Zheyang; Zhang, Li; Hua, Mengyuan; Yang, Xuelin; Hao, Yilong; Chen, Jing; Shen, Bo

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

IEEE Journal of the Electron Devices Society, v. 11, March 2023, article number 10077731, p. 198-203
Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; Chen, Kevin J.

Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Advanced Materials, v. 35, (12), March 2023, article number 2208960
Chen, Junting; Zhao, Junlei; Feng, Sirui; Zhang, Li; Cheng, Yan; Liao, Hang; Zheng, Zheyang; Chen, Xiaolong; Gao, Zhen; Chen, Kevin J.; Hua, Mengyuan

RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates

IEEE Electron Device Letters, v. 44, (1), January 2023, article number 9941147, p. 29-31
Cheng, Yan; Ng, Yat Hon; Zheng, Zheyang; Chen, Jing
Article 18

650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications

IEEE Transactions on Industrial Electronics, v. 69, (9), September 2022, article number 9552482, p. 8997-9006
Zhong, Kailun; Wang, Yuru; Lyu, Gang; Wei, Jin; Sun, Jiahui; Chen, Kevin J.

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

AIP Advances, v. 12, (4), April 2022, article number 045125
Song, Wenjie; Zhang, Jie; Zheng, Zheyang; Feng, Sirui; Yang, Xuelin; Shen, Bo; Chen, Jing

GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

IEEE Electron Device Letters, v. 43, (5), May 2022, article number 9739008, p. 697-700
Chen, Tao; Zheng, Zheyang; Feng, Sirui; Zhang, Li; Song, Wenjie; Chen, Jing

GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits

IEEE Transactions on Electron Devices, v. 69, (8), August 2022, article number 9789144, p. 4162-4169
Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Feng, Sirui; Chen, Jing

GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

IEEE Electron Device Letters, v. 43, (11), November 2022, article number 9900349, p. 1826-1829
Lyu, Gang; Feng, Sirui; Zhang, Li; Chen, Tao; Wei, Jin; Chen, Jing

Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack

IEEE Electron Device Letters, v. 43, (11), November 2022, article number 9889687, p. 1822-1825
Zhang, Li; Zheng, Zheyang; Song, Wenjie; Chen, Tao; Feng, Sirui; Chen, Junting; Hua, Mengyuan; Chen, Jing

Gate Reliability of Schottky-Type p-GaN Gate HEMTs under AC Positive Gate Bias Stress with a Switching Drain Bias

IEEE Electron Device Letters, v. 43, (9), September 2022, article number 9815302, p. 1404-1407
Cheng, Yan; He, Jiabei; Xu, Han; Zhong, Kailun; Zheng, Zheyang; Sun, Jiahui; Chen, Kevin J.

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

IEEE Transactions on Industrial Electronics, v. 69, (8), August 2022, p. 8387-8395
Zhong, Kailun; Wei, Jin; He, Jiabei; Feng, Sirui; Wang, Yuru; Yang, Song; Chen, Jing

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Applied Physics Letters, v. 120, (12), March 2022, article number 122109
Liao, Yaqiang; Chen, Tao; Wang, Jia; Cai, Wentao; Ando, Yuto; Yang, Xu; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Jing; Amano, Hiroshi

Interfacial band parameters of ultrathin ALD-Al2O3, ALD-HfO2, and PEALD-AlN/ALD-Al2O3 on c-plane, Ga-face GaN through XPS measurements

Journal of Applied Physics, v. 132, (13), 3 October 2022, article number 135302
Gong, Jiarui; Zheng, Zheyang; Vincent, Daniel; Zhou, Jie; Kim, Jisoo; Kim, Donghyeok; Ng, Tien Khee; Ooi, Boon S.; Chen, Kevin J.; Ma, Zhenqiang

Monolithic Integration of Gate Driver and Protection Modules with p-GaN Gate Power HEMTs

IEEE Transactions on Industrial Electronics, v. 69, (7), July 2022, p. 6784-6793
Xu, Han; Tang, Gaofei; Wei, Jin; Zheng, Zheyang; Chen, Jing

Normally-OFF p-GaN Gate Double-Channel HEMT with Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

IEEE Electron Device Letters, v. 43, (9), 1 August 2022, p. 1424-1427
Liao, Hang; Zheng, Zheyang; Chen, Tao; Zhang, Li; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Long; Yuan, Li; Chen, Kevin Jing

ON-Resistance Analysis of GaN Reverse-Conducting HEMT with Distributive Built-In SBD

IEEE Transactions on Electron Devices, v. 69, (2), February 2022, p. 644-649
Wei, Jin; Zhang, Li; Zheng, Zheyang; Song, Wenjie; Yang, Song; Chen, Jing

Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs

IEEE Transactions on Industrial Electronics, v. 69, (7), July 2022, article number 9499957, p. 7340-7348
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE Transactions on Industrial Electronics, v. 69, (12), December 2022, article number 9658266, p. 12773-12783
Lyu, Gang; Sun, Jiahui; Wang, Yuru; Chen, Jing

Strain release in GaN epitaxy on 4° off-axis 4H-SiC

Advanced Materials, v. 34, (23), June 2022, article number 2201169
Feng, Sirui; Zheng, Zheyang; Cheng, Yan; Ng, Yat Hon; Song, Wenjie; Chen, Tao; Zhang, Li; Liu, Kai; Cheng, Kai; Chen, Jing

Substrate and Trench Design for GaN-on-EBUS Power IC Platform

IEEE Transactions on Electron Devices, v. 69, (7), July 2022, article number 9790852, p. 3641-3647
Lyu, Gang; Wei, Jin; Chen, Tao; Zhang, Jie; Chen, Jing

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Applied Physics Letters, v. 120, (15), 11 April 2022, article number 152102
Zheng, Zheyang; Chen, Tao; Zhang, Li; Song, Wenjie; Chen, Kevin J.
Conference paper 5

Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, 2022, article number 9813597, p. 73-76
Sun, Jiahui; Zheng, Zheyang; Zhang, Li; Chen, Jing

Correlation between Pulse I-V Tests and Human Body Model (HBM) Electrostatic Discharge (ESD) Tests for GaN HEMTs


Sun, Jiahui; Zheng, Zheyang; Zhang, Li; Chen, Kevin Jing

Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, May 2022, article number 9813627, p. 325-328
Xu, Han; Zheng, Zheyang; Zhang, Li; Sun, Jiahui; Yang, Song; He, Jiabei; Wei, Jin; Chen, Kevin Jing

Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, 2022, article number 9813687, p. 129-132
Cheng, Yan; Xu, Han; Zhang, Li; Chen, Tao; Chen, Junting; Zheng, Zheyang; Chen, Jing

Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2022-May, 2022, article number 9813683, p. 185-188
Lyu, Gang; Wei, Jin; Ng, Yat Hon; Cheng, Yan; Feng, Sirui; Chen, Jing
Article 23

p-GaN Gate HEMT with Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9253682, p. 22-25
Zhang, Li; Zheng, Zheyang; Yang, Song; Song, Wenjie; He, Jiabei; Chen, Jing

A Physics-Based Empirical Model of Dynamic IOFF under Switching Operation in p-GaN Gate Power HEMTs

IEEE Transactions on Power Electronics, v. 36, (9), September 2021, article number 9364720, p. 9796-9805
Wang, Yuru; Chen, Tao; Hua, Mengyuan; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Zhong, Kailun; Chen, Jing

An ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits

Semiconductor Science and Technology, v. 36, (4), April 2021, article number 044002
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Sun, Qian; Chen, Jing

Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching

IEEE Electron Device Letters, v. 42, (4), April 2021, p. 501-504
Zhong, Kailun; Xu, Han; Zheng, Zheyang; Chen, Junting; Chen, Kevin Jing

Characterization of GaON as a Surface Reinforcement Layer of p-GaN in Schottky-type p-GaN Gate HEMTs

Applied Physics Letters, v. 119, (5), 2 August 2021, article number 053503
Zhang, Lining; Zheng, Zheyang; Yang, Song; Song, Wenjie; Feng, Sirui; Chen, Jing

Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Network

IEEE Transactions on Antennas and Propagation, v. 69, (4), April 2021, article number 9254157, p. 1864-1873
Qiu, Haochuan; Liu, Houfang; Jia, Xiufeng; Jiang, Zhou-Ying; Liu, Yan-Hua; Xu, Jianlong; Lu, Tianqi; Shao, Minghao; Ren, Tian-Ling; Chen, Jing

Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9420748, p. 986-989
Chen, Junting; Hua, Mengyuan; Wang, Chengcai; Liu, Ling; Li, Lingling; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Jing

Dv/Dt-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device

IEEE Transactions on Power Electronics, v. 36, (3), March 2021, article number 9163283, p. 3312-3322
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Chen, Jing

Gallium nitride-based complementary logic integrated circuits

Nature Electronics, v. 4, 19 July 2021, p. 595-603
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Feng, Sirui; Xu, Han; Sun, Jiahui; Yang, Song; Chen, Tao; Wei, Jin; Chen, Jing

GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

IEEE Journal of the Electron Devices Society, v. 9, May 2021, article number 9423527, p. 545-551
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing

GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation

IEEE Electron Device Letters, v. 42, (4), April 2021, p. 489-492
Yang, Song; Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Kevin Jing

Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT

IEEE Electron Device Letters, v. 42, (5), May 2021, article number 9383262, p. 669-672
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhao, Junlei; Yang, Song; Zhang, Li; Zheng, Zheyang; Wei, Jin; Chen, Kevin Jing

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

IEEE Transactions on Power Electronics, v. 36, (11), November 2021, article number 9416882, p. 12158-12162
Sun, Jiahui; Zheng, Zheyang; Zhong, Kailun; Lyu, Gang; Chen, Jing

Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs

IEEE Transactions on Power Electronics, v. 36, (5), May 2021, article number 9222279, p. 5904-5914
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9264210, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing

Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs

Applied Physics Letters, v. 118, (16), April 2021, article number 163502
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Jing

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs

IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 9, (3), June 2021, article number 9144186, p. 3686-3694
Chen, Junting; Hua, Mengyuan; Wei, Jin; He, Jiabei; Wang, Chengcai; Zheng, Zheyang; Chen, Jing

On the Operating Speed and Energy Efficiency of GaN-based Monolithic Complementary Logic Circuits for Integrated Power Conversion Systems

Fundamental Research, v. 1, (6), November 2021, p. 661-671
Zheng, Zheyang; Xu, Han; Zhang, Li; Chen, Jing

Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor

Semiconductor Science and Technology, v. 36, (2), January 2021, article number 024006
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Jing

RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure

IEEE Electron Device Letters, v. 42, (8), August 2021, article number 9449839, p. 1116-1119
Song, Wenjie; Zheng, Zheyang; Chen, Tao; Wei, Jin; Yuan, Li; Chen, Jing

Short Circuit Capability Characterization and Analysis of P-GaN Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

IEEE Transactions on Industrial Electronics, v. 68, (9), September 2021, article number 9145816, p. 8798-8807
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Chen, Jing

Threshold Voltage Instability Of Enhancement-Mode GaN Buried p-Channel MOSFETs

IEEE Electron Device Letters, v. 42, (11), November 2021, p. 1584-1587
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Tao; Feng, Sirui; Ng, Yat Hon; Sun, Jiahui; Xu, Han; Yang, Song; Wei, Jin; Chen, Kevin J.

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Japanese Journal of Applied Physics, v. 60, (7), July 2021, article number 070903
Liao, Yaqiang; Chen, Tao; Wang, Jia; Ando, Yuto; Cai, Wentao; Yang, Xu; Watanabe, Hirotaka; Hirotani, Jun; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Jing; Amano, Hiroshi
Conference paper 9

A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452232, p. 39-42
Zhong, Kailun; Xu, Han; Yang, Song; Zheng, Zheyang; Chen, Junting; Chen, Jing

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Technical Digest - International Electron Devices Meeting, IEDM, v. 2021-December, December 2021, p. 5.2.1-5.2.4
Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Tao; Zhong, Kailun; Liu, Jiapeng; Zeng, Rong; Chen, Jing

Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Device

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452274, p. 223-226
Zhong, Kailun; Sun, Jiahui; Wang, Yuru; Lyu, Gang; Feng, Sirui; Chen, Tao; Chen, Jing

Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452266, p. 207-210
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability

Proceedings of International Conference on ASIC, v. 2021, October 2021, article number 9620369
Hua, Mengyuan; Chen, Junting; Wang, Chengcai; Li, Lingling; Liu, Ling; Zheng, Zheyang; Chen, Jing

Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452204, p. 35-38
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Jing

Impact Of OFF-state Gate Bias On Dynamic RON of p-GaN Gate HEMT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452256, p. 47-50
Jiang, Zuoheng; Hua, Mengyuan; Huang, Xinran; Li, Lingling; Chen, Junting; Chen, Jing

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

Technical Digest - International Electron Devices Meeting, IEDM, v. 2021-December, December 2021, article number 9720653, p. 5.3.1-5.3.4
Zhang, Li; Zheng, Zheyang; Cheng, Yan; Ng, Yat Hon; Feng, Sirui; Song, Wenjie; Chen, Tao; Chen, Jing

Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452259, p. 43-46
Zhang, Li; Yang, Song; Zheng, Zheyang; Song, Wenjie; Liao, Hang; Chen, Jing
Article 15

p-GaN Gate Power Transistor with Distributed Built-in Schottky Barrier Diode for Low-Loss Reverse Conduction

IEEE Electron Device Letters, v. 41, (3), March 2020, p. 341-344
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Xu, Han; Chen, Kevin Jing

A Normally-OFF Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE Transactions on Power Electronics, v. 35, (9), September 2020, p. 9669-9679
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Zhang, Long; Chen, Kevin J.

Characterization and Analysis of Low-Temperature Time-To-Failure Behavior in Forward-Biased Schottky-Type p-GaN Gate HEMTs

Applied Physics Letters, v. 116, (22), June 2020
He, Jiabei; Wei, Jin; Li, Yang; Zheng, Zheyang; Yang, Song; Huang, Baoling; Chen, Jing

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

IEEE Transactions on Industrial Electronics, v. 67, (12), December 2020, article number 8936541, p. 10284-10294
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; He, Jiabei; Lei, Jiacheng; Chen, Jing

E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

IEEE Electron Device Letters, v. 41, (4), April 2020, article number 9017996, p. 545-548
Wang, Chengcai; Hua, Mengyuan; Chen, Junting; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Li; Chen, Kevin Jing

GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage

IEEE Electron Device Letters, v. 41, (9), September 2020, article number 9145684, p. 1304-1307
Zheng, Zheyang; Song, Wenjie; Lei, Jiacheng; Qian, Qingkai; Wei, Jin; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J.

GaN Power IC Technology on p-GaN Gate HEMT Platform

Japanese journal of applied physics, v. 59, (SG), April 2020, article number SG0801
Wei, Jin; Tang, Gaofei; Xie, Ruiliang; Chen, Kevin Jing

High ION and ION/IOFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform

IEEE Electron Device Letters, v. 41, (1), January 2020, article number 8907389, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al2O3 Gate Dielectric and In Situ Si3N4-Cap Passivation

IEEE Transactions on Electron Devices, v. 67, (10), October 2020, article number 9189937, p. 4136-4140
Zhu, Liyang; Zhou, Qi; Yang, Xiu; Lei, Jiacheng; Chen, Kuangli; Luo, Zhihua; Huang, Peng; Zhou, Chunhua; Chen, Jing; Zhang, Bo

High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 8, (1), March 2020, p. 215-222
Sun, Jiahui; Yang, Shu; Xu, Hongyi; Zhang, Long; Wu, Xinke; Sheng, Kuang; Chen, Kevin Jing

Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations

IEEE Transactions on Electron Devices, v. 67, (1), January 2020, article number 8930629, p. 217-223
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing

Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

IEEE Electron Device Letters, v. 41, (5), May 2020, article number 9032129, p. 685-688
Yang, Song; Huang, Sen; Wei, Jin; Zheng, Zheyang; Wang, Yuru; He, Jiabei; Chen, Kevin Jing

Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Journal of the Electron Devices Society, v. 8, April 2020, p. 358-364
Yang, Song; Tang, Zhikai; Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lu, Yunyou; Chen, Kevin Jing

Overcoming the Limitations of Gallium Oxide Through Heterogeneous Integration

Science China Physics, Mechanics & Astronomy, v. 64, (1), 2021, article number 217331
Zhang, Yuhao; Chen, Jing

Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals

IEEE Transactions on Electron Devices, v. 67, (10), 19 August 2020, article number 9171548, p. 4335-4339
Wei, Jin; Zhang, Meng; Chen, Jing
Conference paper 16

700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, v. 2020-September, September 2020, article number 9170075, p. 521-524
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Feng, Sirui; Chen, Kevin J.

A Novel Ultra-Thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-Temperature Reverse Blocking Characteristic

2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278128
Zhu, Liyang; Zhou, Qi; Chen, Kuangli; Yang, Xiu; Lei, Jiacheng; Luo, Zhihua; Zhou, Chunhua; Chen, Kevin J; Zhang, Bo

A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170086, p. 325-328
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; Chen, Kevin J.

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-temperature Power Switching Applications

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360291
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Zhong, Kailun; Chen, Jing

Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170090, p. 498-501
Wei, Jin; Zhang, Meng; Chen, Kevin J.

Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-Septeber, September 2020, article number 9170148, p. 313-316
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Lyu, Gang; Chen, Kevin J.

Dv/Dt-control of 1200-V Co-packaged SiC-JFET/GaN-HEMT Cascode Device

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170127, p. 86-89
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Chen, Kevin J.

Dynamic Vth in p-GaN Gate Power HEMTs and Its Impacts upon Power Switching Circuits

2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278400
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Kevin J

E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability

2020 IEEE International Electron Devices Meeting (IEDM), v. 2020-December, December 2020, article number 9371969, p. 23.1.1-23.1.4
Hua, Mengyuan; Chen, Junting; Wang, Chengcai; Liu, Ling; Li, Lingling; Zhao, Junlei; Jiang, Zuoheng; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Jing

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170039, p. 14-17
Wang, Chengcai; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J.

Enhancement-Mode GaN p-Channel MOSFETs for Power Integration

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, v. 2020-September, September 2020, article number 9170081, p. 525-528
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Xu, Han; Wong, Roy K.-Y.; Wei, Jin; Chen, Kevin J.

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278305
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhang, Li; Zheng, Zheyang; Chen, Kevin J.

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020, September 2020, article number 9170043, p. 18-21
Chen, Junting; Hua, Mengyuan; Jiang, Jiali; He, Jiabei; Wei, Jin; Chen, Kevin J.

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170191, p. 290-293
He, Jiabei; Wei, Jin; Zheng, Zheyang; Yang, Song; Li, Yang; Huang, Baoling; Chen, Kevin J.

Planar GaN Power Integration – The World is Flat

Technical Digest - International Electron Devices Meeting, IEDM, v. 2020, December 2020, article number 9372069, p. 27.1.1-27.1.4
Chen, Kevin Jing; Wei, Jin; Tang, Gaofei; Xu, Han; Zheng, Zheyang; Zhang, Li; Song, Wenjie

Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360273
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing
Article 18

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

npj 2D Materials and Applications, v. 3, (1), 13 June 2019, article number 24
Qian, Qingkai; Lei, Jiacheng; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Zhong, Kailun; Zheng, Zheyang; Chen, Jing Kevin

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

Applied Physics Express, v. 12, (10), October 2019, article number 106505
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Lei, Jiacheng; Song, Wenjie; Zhang, Long; Hua, Mengyuan; Chen, Jing

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Applied Physics Letters, v. 114, (5), February 2019, article number 053109
Cai, Xiangbin; Hua, Mengyuan; Zhang, Zhaofu; Yang, Song; Zheng, Zheyang; Cai, Yuan; Chen, Kevin Jing; Wang, Ning

Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors

Journal of Applied Physics, v. 126, (16), October 2019, article number 164505
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Zhao, Rui; Shi, Wen; Zhang, Yichuan; Fan, Jie; Yin, Haibo; Wei, Ke; Zheng, Yingkui; Shi, Jingyuan; Wang, Xiaolei; Wang, Wenwu; Sun, Qian; Chen, Jing

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8644033, p. 526-529
Wei, Jin; Xie, Ruiliang; Xu, Han; Wang, Hanxing; Wang, Yuru; Zhong, Kailun; Tang, Gaofei; He, Jiabei; Zhang, Meng; Chen, Kevin Jing

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

IEEE Journal of Emerging and Selected Topics in Power Electronics, v.7, (3), Septemeber 2019, article number 8746174, p. 1425-1439
Yang, Shu; Han, Shaowen; Sheng, Kuang; Chen, Jing

Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

ACS Applied Electronic Materials, v. 1, (5), 28 May 2019, p. 642-648
Hua, Mengyuan; Cai, Xiangbin; Yang, Song; Zhang, Zhaofu; Zheng, Zheyang; Wang, Ning; Chen, Jing

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p -GaN Gate HEMTs

IEEE Transactions on Electron Devices, v. 66, (8), August 2019, p. 3453-3458
He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Jing

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

IEEE Transactions on Electron Devices, v. 66, (7), July 2019, p. 3034-3039
Wei, Jin; Zhang, Meng; Jiang, Huaping; Li, Baikui; Chen, Kevin Jing

Investigation of Dynamic IOFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, v. 66, (9), September 2019, article number 8784243, p. 3789-3794
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Kevin Jing

Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs

IEEE Electron Device Letters, v. 40, (10), October 2019, article number 8812703, p. 1658-1661
Zhang, Long; Zhu, Jing; Cao, Shilin; Ma, Jie; Li, Ankang; Wei, Jin; Lyu, Gang; Li, Shaohong; Li, Sheng; Wei, Jiaxing; Wu, Wangran; Sun, Weifeng; Chen, Jing

Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

Applied Physics Express, v. 12, (2), February 2019, article number 024001
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Wang, Yuankun; Fan, Jie; Yang, Shuo; Yin, Haibo; Wei, Ke; Wang, Wenwu; Gao, Hongwei; Zhou, Yu; Sun, Qian; Chen, Jing

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-in Schottky Barrier Diode

IEEE Transactions on Electron Devices, v. 66, (5), May 2019, article number 8672454, p. 2106-2112
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Qian, Qingkai; Hua, Mengyuan; Zheng, Zheyang; Chen, Kevin Jing

Short Circuit Capability and Short Circuit Induced VTH Instability of a 1.2kV SiC Power MOSFET

IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 7, (3), September 2019, article number 8695780, p. 1539-1546
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Wang, Yuru; Chen, Kevin Jing

Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance

IEEE Electron Device Letters, v. 40, (1), January 2019, article number 8534459, p. 79-82
Zhang, Meng; Wei, Jin; Zhou, Xianda; Jiang, Huaping; Li, Baikui; Chen, Jing

Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study

IEEE Electron Device Letters, v. 40, (7), July 2019, p. 1155-1158
Wei, Jin; Zhang, Meng; Jiang, Huaping; Zhou, Xianda; Li, Baikui; Chen, Jing

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Physica Status Solidi (B), November 2019, article number 1900554
Takahashi, Masahiro; Tanaka, Atsushi; Ando, Yuto; Watanabe, Hirotaka; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Shima, Kohei; Kojima, Kazunobu; Chichibu, Shigefusa F.; Chen, Jing; Amano, Hiroshi

Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

IEEE Transactions on Power Electronics, v. 34, (4), April 2019, article number 8401695, p. 3711-3728
Xie, Ruiliang; Yang, Xu; Xu, Guangzhao; Wei, Jin; Wang, Yuru; Wang, Hanxing; Tian, Mofan; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing
Conference paper 17

Characterization of Dynamic IOFF in Schottky-Type p-GaN Gate HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019, May 2019, article number 8757660, p. 463-466
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Kevin Jing

Characterization of Dynamic IOFF in Schottky-Type p-GaN Gate HEMTs

Proceedings of the 31st International Symposium on Power Semiconductor Devices & ICs 19-23 May 2019, Shanghai, China / IEEE. Shanghai, China : IEEE, 2019, p. 463-466
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Jing

Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757606, p. 459-462
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Hua, Mengyuan; Zheng, Zheyang; Wang, Yuru; Chen, Kevin Jing

Development of GaN power Integrated Circuits


Chen, Kevin Jing; Wei, Jin

DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures


Yang, Song; Huang, Sen; Wei, Jin; Wang, Yuru; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications

2019 Compound Semiconductor Week (CSW), May 2019
Song, Wenjie; Zheng, Zheyang; Lei, Jiacheng; Wei, Jin; Yuan, Li; Chen, Jing

Dynamic Threshold Voltage in p-GaN Gate HEMT

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757602, p. 291-294
Wei, Jin; Xu, Han; Xie, Ruiliang; Zhang, Meng; Wang, Hanxing; Wang, Yuru; Zhong, Kailun; Hua, Mengyuan; He, Jiabei; Chen, Jing

Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2019-May, May 2019, article number 8757600, p. 467-470
Hua, Mengyuan; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Zhaofu; Chen, Jing

Identifying the Location of Hole-Induced Gate Degradation in LPCVD−SiNx/GaN MIS-FETs under High Reverse-Bias Stress

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757652, p. 435-438
Zheng, Zheyang; Hua, Mengyuan; Wei, Jin; Zhang, Zhaofu; Chen, Jing

Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757685, p. 275-278
Xu, Han; Tang, Gaofei; Wei, Jin; Chen, Jing

Integration on GaN-on-Si p-GaN gate HEMT platform


Chen, Kevin Jing

Investigations of p-shielded SiC trench IGBT with considerations on IE effect, oxide protection and dynamic degradation

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757642, p. 199-202
Wei, Jin; Zhang, Meng; Jiang, Huaping; Li, Baikui; Zheng, Zheyang; Chen, Jing

Repetitive Short Circuit Energy Dependent VTH Instability of 1.2kV SiC Power MOSFETs

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757639, p. 263-266
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Wang, Yuru; Chen, Jing

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757587, p. 411-414
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Kang, Xuanwu; Fan, Jie; Yang, Shuo; Yin, Haibo; Wei, Ke; Zheng, Yingkui; Wang, Xiaolei; Wang, Wenwu; Shi, Jingyuan; Gao, Hongwei; Sun, Qian; Chen, Jing

Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET

Proceedings of International Conference on ASIC, v. 2019, October 2019, article number 8983535
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1- x Channel

Technical Digest - International Electron Devices Meeting, IEDM, v. 2018-December, January 2019, article number 8614687, p. 30.3.1-30.3.4
Hua, Mengyuan; Cai, Xiangbin; Yang, Song; Zhang, Zhaofu; Zheng, Zheyang; Wei, Jin; Wang, Ning; Chen, Jing

Temperature-Dependent Gate Degradation of p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757574, p. 295-298
He, Jiabei; Wei, Jin; Yang, Song; Hua, Mengyuan; Zhong, Kailun; Chen, Jing
Article 20

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE Electron Device Letters, v. 39, (2), February 2018, article number 8214234, p. 260-263
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Zheng, Zheyang; Hua, Mengyuan; Chen, Jing

Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface

Applied Physics Express, v. 11, (8), August 2018, article number 081003
Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Tang, Gaofei; Qian, Qingkai; Chen, Jing

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

IEEE Transactions on Electron Devices, v. 65, (7), July 2018, p. 2757-2764
Wei, Jin; Zhang, Meng; Li, Baikui; Tang, Xi; Chen, Jing

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Physica Status Solidi (A) Applications and Materials, v. 215, (10), May 2018, article number 1700641
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

IEEE Electron Device Letters, v. 39, (1), January 2018, article number 8101516, p. 59-62
Wei, Jin; Lei, Jiacheng; Tang, Xi; Li, Baikui; Liu, Shenghou; Chen, Jing

Dependence of VTH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

IEEE Electron Device Letters, v. 39, (3), March 2018, p. 413-416
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing

Dynamic OFF-State Current (Dynamic IOFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact

IEEE Electron Device Letters, 39, 9, September 2018, article number 8402216, p. 1366-1369
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Lei, Jiacheng; Zheng, Zheyang; Wei, Jin; Chen, Jing

Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3

Nano Energy, v. 43, January 2018, p. 259-269
Kim, Kwangeun; Hua, Mengyuan; Liu, Dong; Kim, Jisoo; Chen, Kevin J; Ma, Zhenqiang

High-capacitance-density p-Gan gate capacitors for high-frequency power integration

IEEE Electron Device Letters, v. 39, (9), September 2018, article number 8408835, p. 1362-1365
Tang, Gaofei; Kwan, Man Ho; Su, Ru Yi; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Yang, Thomas; Chern, Chan Hong; Tsai, Tom; Tuan, Hsiao Chin; Kalnitsky, Alex; Chen, Jing

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

IEEE Transactions on Electron Devices, v. 65, (9), September 2018, article number 8423427, p. 3831-3838
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zheng, Zheyang; Zhang, Zhaofu; He, Jiabei; Chen, Jing

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study

Langmuir, v. 34, (8), 2018, p. 2882-2889
Qian, Qingkai; Zhang, Zhaofu; Chen, Kevin J.

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

ACS Applied Materials Interfaces, v. 10, (20), May 2018, p. 17419-17426
Zhang, Zhaofu; Qian, Qingkai; Li, baikui; Chen, Jing

Layer-dependent Second-order Raman Intensity of MoS2 and WSe2: Influence of Intervalley Scattering

Physical Review B, v. 97, (16), April 2018, article number 165409
Qian, Qingkai; Zhang, Zhaofu; Chen, Jing

Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially-Recessed MIS-HEMTs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

IEEE Transactions on Electron Devices, v. 65, (8), Aug 2018, article number 8405596, p. 3185-3191
He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Chen, Jing

Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Applied Physics Express, v. 11, (5), May 2018, article number 054101
Tang, Xi; Li, Baikui; Chen, Kevin Jing; Wang, Jiannong

Photon Emission and Current-collapse Suppression of AlGaN/GaN Field-effect Transistors with Photonic-ohmic Drain at High Temperatures

Applied Physics Express, v. 11, (7), July 2018, article number 071003
Tang, Xi; Zhang, Zhaofu; Wei, Jin; Li, Baikui; Wang, Jiannong; Chen, Jing

Reverse-blocking Normally-OFF GaN Double-channel MOS-HEMT with Low Reverse Leakage Current and Low ON-state Resistance

IEEE Electron Device Letters, v. 39, (7), July 2018, p. 1003-1006
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Zheng, Zheyang; Hua, Mengyuan; Chen, Jing

The 2018 GaN power electronics roadmap

Journal of physics. D. Applied physics, v. 51, (16), 26 March 2018, article number 163001
H amano; Y baines; E beam; Matteo borga; T bouchet; Paul r chalker; M charles; Chen, Kevin Jing; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Cioccio, L. Di; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xi; Marcon, Denis; Marz, Martin; McCarthy R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narauyanan, E.M.S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hon, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

IEEE Transactions on Electron Devices, v. 65, (1), January 2018, p. 207-214
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Fan, Jie; Shi, Jingyuan; Wei, Ke; Zheng, Yingkui; Gao, Hongwei; Sun, Qian; Wang, Maojun; Shen, Bo; Chen, Kevin J.

VTH instability of p-GaN gate HEMTs under static and dynamic gate stress

IEEE Electron Device Letters, v. 39, (10), October 2018, article number 8451943, p. 1576-1579
He, Jiabei; Tang, Gaofei; Chen, Jing
Conference paper 18

An Interdigitated GaN MIS-HEMT/SBD Normally-off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss

Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, January 2018, p. 25.2.1-25.2.4
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Qian, Qingkai; Hua, Mengyuan; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing

Dynamic OFF-State Leakage Current (IOFF) in GaN power HEMTs


Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Zheng, Zheyang; Yang, Song; Chen, Jing

Dynamic OFF-State Leakage Current (IOFF) in GaN Power HEMTs


Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Zheng, Zheyang; Yang, Song; Chen, Jing

Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs


Chen, Kevin Jing; Hua, Mengyuan

GaN Power Integrated Circuits


Chen, Kevin Jing; Tang, Gaofei

High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer

International Conference on Digital Signal Processing, DSP, v. 2018-November, January 2019, article number 8631634
Hua, Mengyuan; Chen, Jing

High-speed, high-reliability GaN power device with integrated gate driver

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, 22 June 2018, p. 76-79
Tang, Gaofei; Kwan, M.-H.; Zhang, Zhaofu; He, Jiabei; Lei, Jiacheng; Su, R.-Y.; Yao, F.-W.; Lin, Y.-M.; Yu, J.-L.; Yang, Thomas; Chern, Chan-Hong; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Jing

Modeling the gate driver IC for GaN transistor: A black-box approach

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, v. 2018-March, April 2018, p. 2900-2904
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Tang, Gaofei; Wei, Jin; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing

Modification of amorphous-SiNx/GaN interface trap density by nitridation: A first-principles calculation study


Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Qian, Qingkai; Chen, Jing

Monitoring the Surface Functionalizaion of MoS2 and WSe2 for High-k Integration Using In Situ Resonant Raman Spectroscopy - A First-principle study


Qian, Qingkai; Zhang, Zhaofu; Chen, Jing

Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform


Tang, Xi; Zhou, Q; Qiu, R; Zheng, R; Li, Baikui; Chen, Jing; Wang, Jiannong

Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric


He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing

Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), December 2018, article number 8565824, p. 527-530
Hua, Mengyuan; Chen, Jing

Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs

Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, p. 33.2.1-33.2.4
Hua, Mengyuan; Wei, Jin; Bao, Qilong; He, Jiabei; Zhang, Zhaofu; Zheng, Zheyang; Lei, Jiacheng; Chen, Jing

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 276-279
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Chen, Jing

SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 411-414
Wei, Jin; Zhang, Meng; Jiang, Huaping; To, Suet; Kim, Sunghan; Kim, Jun Youn; Chen, Jing

Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress


He, Jiabei; Tang, Gaofei; Hua, Mengyuan; Chen, Jing

Understanding the Dynamic Behaviro in GaN-on-Si Power Devices and IC’s


Chen, Kevin Jing
Article 15

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

IEEE Transactions on Device and Materials Reliability, v. 17, (2), June 2017, article number 7898842, p. 432-437
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

IEEE Transactions on Power Electronics, v. 32, (8), August 2017, article number 7592895, p. 6416-6433
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J.

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

IEEE ELECTRON DEVICE LETTERS, v. 38, (9), September 2017, p. 1282-1285
Tang, Gaofei; Kwan, Alex M. H.; Wong, Roy K. Y.; Lei, Jiacheng; Su, R. Y.; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Kevin J.

Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

IEEE Transactions on Electron Devices, v. 64, (6), June 2017, p. 2592-2598
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing

Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7933267, p. 937-940
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing

Enhanced Dielectric Deposition on Single-Layer MoS2 with Low Damage Using Remote N2 Plasma Treatment

Nanotechnology, v. 28, (17), April 2017, article number 175202
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Tang, Gaifei; Lei, Jiacheng; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Jing

GaN-on-Si Power Technology: Devices and Applications

IEEE Transactions on Electron Devices, v. 64, (3), March 2017, p. 779-795, Article number 7862945
Chen, Kevin Jing; Häberlen, Oliver; Lidow, Alex; Tsai, Chun Lin; Ueda, Tetsuzo; Uemoto, Yasuhiro; Wu, Yifeng

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

IEEE Electron Device Letters, v. 38, (8), August 2017, article number 7955040, p. 1075-1078
Liu, Shaofei; Wang, Maojun; Tao, Ming; Yin, Ruiyuan; Gao, Jingnan; Sun, Haozhe; Lin, Wei; Wen, Cheng P.; Wang, Jinyan; Wu, Wengang; Hao, Yilong; Zhang, Zhaofu; Chen, Jing; Shen, Bo

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

IEEE Transactions on Electron Devices, v. 64, (12), December 2017, article number 8093740, p. 5048-5056
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Wei, Jin; Sheng, Kuang; Chen, Jing

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

IEEE Transactions on Power Electronics, v. 32, (7), July 2017, article number 7570254, p. 5539-5549
Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Jing

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7932959, p. 929-932
Hua, Mengyuan; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Cai, Xiangbin; Wang, Ning; Chen, Jing

Remote N2 Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS2 MOSFET

Applied Physics Express, v. 10, (12), December 2017, article number 125201
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Chen, Jing

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

IEEE Transactions on Electron Devices, v. 64, (10), October 2017, p. 4036-4043
Zhang, Zhaofu; Li, Baikui; Qian, Qingkai; Tang, Xi; Hua, Mengyuan; Huang, Baoling; Chen, Kevin J.

SiC Trench MOSFET with Self-biased p-shield for Low RON-SP and Low OFF-state Oxide Field

IET Power Electronnics, v. 10, (10), 18 August 2017, p. 1208-1213
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang

Trapping Mechanisms in Insulated-Gate GaN Power Devices: Understanding and Characterization Techniques

Physica Status Solidi (A) Applications and Materials Science, v. 214, (3), March 2017, article number 1600607
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Chen, Kevin J
Book chapter 2

Fluorine-Implanted Enhancement-Mode Transistors

Power GaN Devices: Materials, Applications and Reliability / Editors: Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Switzerland : Springer International Publishing, 2017, p. 273-293, Series: Power Electronics and Power Systems
Chen, Kevin Jing

Recent Progress in GaN-on-Si HEMT

Handbook of GaN Semiconductor Materials and Devices / Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen, editors. Boca Raton : CRC Press, 2017, p. 347-366, Book series: Optics and Optoelectronics
Chen, Kevin Jing; Shu, Yang
Conference paper 18

An Analytical Model for False Turn-on Evaluation of GaN Transistor in Bridge-Leg Configuration

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7854840
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J.

Buffer Trapping-induced RON Degradation in GaN-on-Si Power Transistors: Role of Electron Injection From Si Substrate

Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988903, p. 101-104
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Sheng, Kuang; Chen, Kevinjing

Characterization and analysis of dynamic RON of GaN-on-Si lateral power devices with grounded and floating Si substrate


Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing

Charge Storage Effect in SiC Trench MOSFET with a Floating p-shield and its Impact on Dynamic Performances

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988985, p. 387-390
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing

Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack


He, Jiabei; Hua, Mengyuan; Tang, Gaofei; Zhang, Zhaofu; Chen, Kevin J.

Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique


Bao, Qilong; Li, yang; Zhang, Zhaofu; Qian, Qingkai; Lei, Jiacheng; Tang, Gaofei; Huang, Baoling; Chen, Kevin Jing

High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, p. 89-92
Hua, Mengyuan; Zhang, Zhaofu; Qian, Qingkai; Wei, Jin; Bao, Qilong; Chen, Jing

High-speed Power MOSFET with Low Reverse Transfer Capacitance Using a Trench/planar Gate Architecture

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988956, p. 331-334
Wei, Jin; Wang, Yuru; Zhang, Meng; Jiang, Huaping; Chen, Jing

Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices

Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988920, p. 235-238
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing

Integration of LPCVD-SiNx Gate Dielectric with Recessed-Gate E-Mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime

Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838388, p. 10.4.1-10.4.4
Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lei, Jiacheng; Tang, Gaofei; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing

Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer


Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Jing

Maximizing the Performance of 650 v p-GaN Gate HEMTs: Dynamic Ron Characterization and Gate-Drive Design Considerations

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7855231
Wang, Hanxing; Xie, Ruiliang; Liu, Cheng; Wei, Jin; Tang, Gaofei; Chen, Jing

Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform


Tang, Gaofei; Wang, Hanxing; Lei, Jiacheng; Chen, kevin jing

Nitridation of GaN Surface for Power Device Application: A First-Principles Study

Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838552, p. 36.2.1-36.2.4
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Huang, Baoling; Chen, Kevin Jing

PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer


Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing

Role of Shallow Surface Traps and Polarization Charges in Nitride-based Passivation for AlGaN/GaN Heterojunction FET

2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016 - Conference Proceedings, January 2017, article number 7803763, p. 85-88
Yang, Song; Tang, Zhikai; Lu, Yunyou; Jiang, Qimeng; Zhang, Anping; Chen, Kevin J

Switching Transient Analysis for Normally-off GaN Transistors With p-GaN Gate in a Phase-leg Circuit

2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, v. 2017-January, November 2017, article number 8095810, p. 399-404
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Wang, Hanxing; Tian, Mofan; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing

TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Article 14

Analysis of a four generation family reveals the widespread sequence-dependent maintenance of allelic DNA methylation in somatic and germ cells

Scientific Reports, v. 6, January 2016, article number 19260
Tang, Aifa; Huang, Yi; Li, Zesong; Wan, Shengqing; Mou, Lisha; Yin, Guangliang; Li, Ning; Xie, Jun; Xia, Yudong; Li, Xianxin; Luo, Liya; Zhang, Junwen; Chen, Shen; Wu, Song; Sun, Jihua; Sun, Xiaojuan; Jiang, Zhimao; Chen, Jing; Li, Yingrui; Wang, Jian; Wang, Jun; Cai, Zhiming; Gui, Yaoting

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain

IEEE Transactions on Electron Devices, v. 63, (7), July 2016, Article number 7478098, p. 2831-2837
Tang, Xi; Li, Baikui; Zhang, Zhaofu; Tang, Gaofei; Wei, Jin; Chen, Jing

Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

IEEE Electron Device Letters, v. 37, (3), March 2016, article number 7386610, p. 265-268
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing

Dynamic Gate Stress-induced VTH Shift and its Impact on Dynamic RON in GaN MIS-HEMTs

IEEE Electron Device Letters, v. 37, (2), February 2016, article number 7347343, p. 157-160
Yang, Shu; Lu, Yunyou; Wang, Hanxing; Liu, Shenghou; Liu, Cheng; Chen, Jing

Gate stack engineering for GaN lateral power transistors

Semiconductor Science and Technology, v. 31, (2), February 2016, article number 024001
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Jing

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7590090, p. 1617-1620
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei; Sun, Qian; Zhang, Zhaofu; Chen, Kevin J.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Scientific Reports, v. 6, June 2016, article number 27676
Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

IEEE Electron Device Letters, v. 37, (11), November 2016, article number 7567511, p. 1458-1461
Wei, Jin; Zhang, Meng; Jiang, Huaping; Cheng, Ching-Hsiang; Chen, Jing

On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform

Physica Status Solidi (C) Current Topics in Solid State Physics, v. 13, (5-6), May 2016, p. 365-368
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Jing

Optoelectronic devices on AlGaN/GaN HEMT platform

Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1213-1221
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Jing

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

IEEE Transactions on Electron Devices, v. 63, (6), June 2016, article number 7466844, p. 2469-2473
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

IEEE Photonics Technology Letters, v. 28, (24), December 2016, article number 7725988, p. 2803-2806
Li, Baikui; Tang, Xi; Tang, Gaofei; Wei, Jin; Wang, Jiannong; Chen, Jing

Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices

Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 861-867
Chen, Jing; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan

面向高性能GaN基功率電子的器件物理研究

中國科學:物理學 力學 天文學=Scientia Sinica: Physica, Mechanica et Astronomica, v. 46, (10), July 2016, article number 107307
黃森; 杨树; 唐智凯; 化梦媛; 王鑫華; 魏珂; 包琦龍; 劉新宇; 陳敬
Conference paper 10

Comparison of SiNx and AlN Passivations for AlGaN/GaN HEMTs

ECS Meeting Abstracts, v. MA2016-01, (24), 2016, p. 1220
Yang, Song; Lei, Lei; Yu, Kun; Zhang, Anping; Chen, Jing

Compatibility of AlN/SiNx Passivation with High-Temperature Process

CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, article number 9.3, p. 233-236
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing

Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT


Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

Technical Digest - International Electron Devices Meeting, IEDM, 2016-February, February 2016 , article number 7409662, p. 9.4.1-9.4.4
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Zhang, Zhaofu; Tang, Gaofei; Liu, Cheng; Lu, Yunyou; Hua, Mengyuan; Chen, Jing

Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, July 2017, article number 7998839, p. 61-64
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin J

First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom


Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Lei, Jiacheng; Huang, Baoling; Chen, Kevin Jing

Impact of VTH Shift on RON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), v. 2016-July, July 2016, article number 7520828, p. 263-266
Yang, Shu; Lu, Yunyou; Liu, Shenghou; Wang, Hanxing; Liu, Cheng; Chen, Jing

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520770, p. 31-34
Tang, Xi; Li, Baikui; Wang, Hanxing; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing

Performance Enhancement and Characterization Techniques for GaN Power Devices

2016 Compound Semiconductor Week (CSW)[ includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 2016, article number 7528840
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Longobardi, Giorgia; Udrea, Florin; Chen, Jing

Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520787, p. 99-102
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing
Article 16

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

IEEE Transactions on Electron Devices, v. 62, (4), April 2015, article number 7039245, p. 1143-1149
Wang, Han Xing; Kwan, Alex Man Ho; Jiang, Qimeng; Chen, Kevin Jing

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7103310, p. 1870-1878
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Chen, Kevin Jing

An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, v. 34, (9), September 2015, article number 7061385, p. 1401-1414
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin J.; Wu, Xiaowen; Wang, Zhehui; Yang, Peng; Duong, Luan Huu Kinh

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

IEEE Transactions on Electron Devices, v. 62, (10), October 2015, article number 7234887, p. 3215-3222
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen,Jing Kevin

Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Applied Physics Express, v. 8, (6), June 2015, article number 064101
Lu, Yunyou; Jiang, Qimeng; Tang, Zhikai; Yang, Shu; Liu, Cheng; Chen, Kevin Jing

Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation

IEEE Electron Device Letters, v. 36, (8), August 2015, p. 760-762
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J.

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

IEEE Electron Device Letters, v. 36, (5), May 2015, article number 7055356, p. 448-450
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123580, p. 754-756
Huang, Sen; Liu, Xinyu; Zhang, Jinhan; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Zheng, Yingkui; Liu, Honggang; Jin, Zhi; Zhao, Chao; Liu, Cheng; Liu, Shenghou; Yang, Shu; Zhang, Jincheng; Hao, Yue; Chen, Kevin Jing

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters, v. 106, (5), February 2015, article number 051605
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Shen, Bo; Chen, Kevin Jing

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

IEEE Electron Device Letters, v. 36, (12), December 2015, article number 7295542, p. 1287-1290
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Lu, Yunyou; Liu, Cheng; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing

Normally OFF Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

IEEE Transactions on Electron Devices, v. 62, (3), Mar 2015, article number 7015556, p. 821-827
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin J.

O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied Physics Letters, v. 106, (3), January 2015, article number 033507
Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen,Jing Kevin

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Applied Physics Letters, v. 106, (9), March 2015, article number 093505
Li, Baikui; Tang, Xi; Chen, Kevin J.

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123614, p. 757-759
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Huang, Sen; Chen, Kevin Jing; Shen, Bo

Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7154486, p. 2475-2480
Zhang, Chuan; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

IEEE Electron Device Letters, v. 36, (4), April 2015, article number 7042345, p. 318-320
Liu, Cheng; Yang, Shu; Liu, Shenghou; Tang, Zhikai; Wang, Hanxing; Jiang, Qimeng; Chen, Kevin J.
Conference paper 20

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015-June, June 2015, article number 7123434, p. 241-244
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Lu, Yunyou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices


Tang, Xi; Li, Baikui; Chen, Kevin J.

Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices


Tang, Xi; Li, Baikui; Chen, Kevin J.

Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study


Yang, Song; Tang, Zhikai; Lu, Yunyou; Zhang, Anping; Chen, Kevin J.

First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line


Yuan, Li; Xiao, Xia; Tang, Longjuan; Li, Huahua; Jiang, Yuanqi; Chen, Kevin J.; Yen, Allen

Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs


Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing

Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs


Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J.

High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer


Liu, Shenghou; Yang, Shu; Liu, Cheng; Lu, Yunyou; Chen, Kevin J.

III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances

2015 IEEE International Electron Devices Meeting (IEDM), The Institute of Electrical and Electronics Engineers, 2015, p. 3531-3534
Tang, Xi; Li, Baikui; Lu, Yunyou; Wang, Hanxing; Liu, Cheng; Wei, Jin; Chen, Jing

Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier


Liu, Cheng; Wei, Jin; Liu, Shenghou; Wang, Hanxing; Tang, Zhikai; Yang, Shu; Chen, Jing