755 nm InP/GaAs_0.65P_0.35 quantum dot laser with polarization-dependent emission from type-I and type-II band alignments

980 nm QW Micro-Lasers With Ultra-Low Threshold

Fully Etched Low-Back-Reflection and High-Efficiency Silicon Waveguide Grating Couplers With Minimum Feature Size Above 260 nm

Fully-Vertical GaN-on-SiC Trench MOSFETs

High-Efficiency and Low Back-Reflection Fully Etched TM Mode Silicon Waveguide Grating Coupler

Waveguide Grating Couplers with Over 200 nm Bandwidth

545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs with Thick Bottom Dielectric

Efficient Second-Harmonic Generation with Weak Polarization Sensitivity in Gallium Nitride Metasurfaces via Bound States in the Continuum

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm²

GaAs Microdisk Lasers with Al₂O₃ Passivation Selectively Grown on SOI

GaAs Templates Selectively Grown on Silicon-on-Insulator for Lasers in Silicon Photonics

GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System

In-Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI

Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator

980 nm micro-cavity lasers with sub-milliampere threshold

Design and Demonstration of Lateral DBR Lasers Selectively Grown on SOI

GaN-on-Si Vertical Trench MOSFETs with Low RON.sp and High Vth by Enhanced Channel Conductivity

Investigation of Kink Effect in Quasi-Vertical GaN PiN Diodes on Sapphire

Lateral Epitaxy of InGaAs/InP QW Lasers on (001) SOI Wafers

Lateral Growth of DBR InGaAs/InP Lasers with Sub-Wavelength Thicknesses on (001) SOI by MOCVD

Polarization characteristics and carrier lifetime of DBR lasers grown on SOI with lateral QWs

980 nm electrically pumped continuous lasing of QW lasers grown on silicon

A Fully-Integrated Micro-Display System With Hybrid Voltage Regulator

Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz

Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD

High coupling efficiency waveguide grating couplers on lithium niobate

III-V selective regrowth on SOI for telecom lasers in silicon photonics

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Monolithic integrated all-GaN-based µLED display by selective area regrowth

Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay

Small V_th Shift and Low Dynamic R_on in GaN MOSHEMT With ZrO₂ Gate Dielectric

980 nm QW lasers with GaAsP barriers monolithically grown on (001) Si by MOCVD

Comparison of InP QDs and GaAsP QW lasers grown by MOCVD

CW-lasing 980 nm InGaAs/GaAs/GaAsP QW lasers monolithically grown on (001) Si

CW-lasing 980 nm InGaAs/GaAs/GaAsP QW lasers monolithically grown on (001) Si

Fully Integrated High-resolution Speckle Spectrometer Using Linear Coherent Network of Random Resonators

High Coupling Efficiency Waveguide Grating Couplers for Bound-states-in-the-Continuum waveguide on Lithium Niobate

In-plane 1.5 μm DFB lasers laterally grown on SOI

Large-area InP laterally grown on SOI for Micro-lasers and Fabry-Perot lasers

Sub-wavelength InP lasers selectively grown on SOI

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_xDielectric Layer

Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm

Enhancing ON-and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire with Reduced Interface Charges and a Thick Bottom Dielectric

Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs

GaAs on (001) Si templates for near-infrared InP quantum dot lasers

Gain-switching of 1.55 μ m InP-based Qdash lasers grown on Si

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

High-speed and low dark current silicon-waveguide-coupled III-V photodetectors selectively grown on SOI

Hybrid-integrated Monolithic Active-matrix Blue/Red Dual-color Micro-LED Micro-display

Recent advances in light sources on silicon

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

Vertical GaN trench MOSFETs with step-graded channel doping

Voltage-controlled Micro-LEDs integrated with an AlGaN/GaN High Electron Mobility Transistors

Current Collapse Reduction in Al₂O₃/AlGaN/GaN MOSHEMTs on Si with Sub-bandgap Light Illumination

GaAs micro-disk lasers on membranes grown by lateral MOCVD on SOI platform

GaAs on (001) Si templates for near infrared InP QD lasers

High speed Si-waveguide coupled III-V photodetectors selectively grown on SOI by lateral MOCVD

High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

III-V Micro/Nano-lasers and photodetectors in the Telecom Band Grown on SOI

InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm

Selective regrowth of InGaAs/InP MQWs on SOI for telecom band emission

Telecom micro-lasers grown on SOI by lateral epitaxy

1300 v Normally-OFF p-GaN Gate HEMTs on Si with High ON-State Drain Current

848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production

A monolithic InP/SOI platform for integrated photonics

Active matrix monolithic micro-LED full-color micro-display

Ambipolar Photocarrier Doping and Transport in Monolayer WS by Forming a Graphene/WS/Quantum Dots Heterostructure

C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon

Controlled single-mode emission in quantum dot micro-lasers

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

High-performance III-V photodetectors on a monolithic InP/SOI platform

Lasers on an InP/SOI platform with dislocation-free in-plane InP sub-micron bars and membranes

Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED epilayers

Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology

Optical crosstalk reduction in GaN-on-Si micro-LED display

Optical gain and absorption of 1.55 μ m InAs quantum dash lasers on silicon substrate

Optically-pumped InP Quantum Dot Lasers Grown on (001) Silicon

Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon

Selectively Grown III-V Lasers for Integrated Si-Photonics

Telecom InP-based quantum dash photodetectors grown on Si

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Ultra-low threshold optically pumped single mode InP micro-lasers grown on SOI

Gain switching of 1.55m QDash Lasers directly grown on Silicon

High-performance GaN trench gate MOSFETs

Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm

Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown on Si Substrate

1.55 μm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon

1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm²

Bufferless 1.5 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms

Bufferless III-V photodetectors directly grown on (001) silicon-on-insulators

Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si

Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers

Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods

Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates

GaN Single Nanowire p-i-n Diode for High-Temperature Operations

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

High-resolution monolithic micro-led full-color micro-display

III-V lasers selectively grown on (001) silicon

III-V micro- And nano-lasers deposited on amorphous SiO₂

InAs nano-ridges and thin films grown on (001) silicon substrates

InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition

Leakage Current Reduction in β-Ga₂O₃Schottky Barrier Diodes by CF₄Plasma Treatment

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics

MOCVD growth of InP-based 1.3 μ m quantum dash lasers on (001) Si

Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si

Selective lateral photoelectrochemical wet etching of InGaN nanorods

Ultra-low threshold green InGaN quantum dot microdisk lasers grown on silicon

Vertical β-Ga₂O₃ Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

1.55 µm Quantum Dash CW Lasers on Planar (001) Si

1.6 µm continuous-wave lasing from InAs/AlGaInAs quantum dash micro-disk lasers grown on (001) silicon

Comparison of dynamic characteristics of quantum dash and quantum well lasers on InP

Comparison of Dynamic Characteristics of Quantum Dash and Quantum Well Lasers on InP

Electrically pumped CW Lasing of 1.5 µm QDash lasers grown on (001) Si

III-V micro- And nano-lasers grown on silicon emitting in the telecom band

InP-based Lasers Grown on 220 nm SOI by Lateral/vertical Aspect Ratio Trapping

Quantum dot avalanche photodetector on Si substrate

Self-generated chaos in a free-running Fabry-Perot quantum dot laser

1.55-μm Lasers Epitaxially Grown on Silicon

Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers

Broadband telecom emission from InP/InGaAs nano-ridge lasers on silicon-on-insulator substrate

Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

Electrically injected 1.64µm emitting In_0.65Ga_0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si

Exciton aggregation induced photoluminescence enhancement of monolayer WS₂

High-Voltage p-GaN HEMTs with OFF-State Blocking Capability after Gate Breakdown

III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators

Selective lateral epitaxy of dislocation-free InP on silicon-on-insulator

Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator

Growth of III–V semiconductors and lasers on silicon substrates by MOCVD

Active Matrix Monolithic Full-Color LED Micro Display

Active matrix monolithic full-color LED micro-display

Characteristics of 1.3μm Electrically Pumped InAs/AlGaInAs Quantum Dot Lasers on (001) Silicon

Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate

Electrically Injected 1.64 μm-emitting In_0.65Ga_0.35As 3-QW Laser Diodes Grown on Mismatched Substrates by MOVPE

High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure

III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration

III-V Lasers Emitting at 1.3 to 1.5 \mu \mathrm{m} Grown on (001) Silicon by MOCVD (Invited)

III-V Lasers Emitting at 1.3 to 1.5 μm grown on (001) silicon by MOCVD (invited)

Integrated electrically-pumped quantum-dot micro-lasers with tunable single-mode operation

Mechanism of wavelength tuning over 200 nm range from InP/InGaAs nano-lasers grown on SOI

Micro-LED displays: Can the monolithic approach produce full-color?

Monolithic full-color LED micro-display using dual wavelength LED epi-layers

Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm

Monolithic micro-LED full-color micro-displays

Monolithic μ-LED Full-Color Micro-Displays

Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si

Room-Temperature Electrically Pumped InP-based 1.3μm Quantum Dot Laser on On-axis (001) Silicon

Telecom III-V Nano-Lasers with Distributed Bragg Reflectors Grown on (001) Silicon-on-Insulators

Triple reduction of threshold current for 1.3μm in as quantum dot lasers on patterned, on-axis (001) Si

Vertical Schottky Barrier Diodes Based on a Bulk β-Ga₂O₃ Substrate With High Switching Performance

1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon

A Novel 700 v Monolithically Integrated Si-GaN Cascoded Field Effect Transistor

An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver with GaN FETs and Fully Integrated LED Shunt Protectors

Chemical vapor deposited monolayer MoS₂ top-gate MOSFET with atomic-layer-deposited ZrO₂ as gate dielectric

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiN_x by low pressure chemical vapor deposition

Enhancement-Mode GaN MOS-HEMTs with Recess-Free Barrier Engineering and High-k ZrO₂ Gate Dielectric

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

GaAs solar cells on nanopatterned Si substrates

Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (0 0 1) substrates

High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO₂ Gate Dielectric

InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS₂ and InGaN Quantum Dots

Low Optical Crosstalk Micro-LED Micro-Display with Semi-Sphere Micro-Lens for Light Collimation

Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy

Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate

Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si

Room-temperature inP/InGaAs nano-Ridge lasers grown on Si and emitting at telecom bands

Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters

1.5 μm Room-Temperature Electrically Pumped Quantum Dot Lasers Monolithically Grown on Exact (001) Si

A power inductor integration technology using a silicon interposer for DC-DC converter applications

Comparison of MOCVD Grown GaSb on (001) Si substrates using aspect ratio trapping and interfacial misfit growth methods

Design, fabrication, transfer bonding and active matrix driving of GaN-based micro-LEDs displays

Experimental characterization of the fully integrated Si-GaN cascoded FET

High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy

InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths

Integration of III-V Compounds on Silicon by Hetero-epitaxy

Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation

Room temperature lasing from InP/InGaAs nano-ridges at telecom-bands

Room temperature lasing from InP/InGaAs nano-ridges at telecom-bands

Room-temperature electrically pumped InP-based laser directly grown on on-axis (001) silicon

Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon

1.3 μm submilliamp threshold quantum dot micro-lasers on Si

1.55 lm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) si

1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

A novel Si-GaN monolithic integration technology for a high-voltage cascoded diode

Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths

Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon

Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Fin-Array Tunneling Trigger with Tunable Hysteresis on (001) Silicon Substrate

Fully- and quasi-vertical GaN-on-Si p-i-n diodes: High performance and comprehensive comparison

Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)

Fully-Integrated Active Matrix Programmable UV and Blue Micro-LED Display System-on-Panel (SoP)

High performance monolithically integrated GaN Driving VMOSFET on LED

Investigation of in Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-Free Driver

Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold

Parametric study of high-performance 1.55 μm InAs quantum dot microdisk lasers on Si

Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si

Study of interface traps in AlGaN/GaN MISHEMTs using LPCVD SiN_x as gate dielectric

Switching characteristics of monolithically integrated Si-GaN cascoded rectifiers

Switching performance of quasi-vertical GaN-based p-i-n diodes on Si

Transistors and tunnel diodes enabled by large-scale MoS₂ nanosheets grown on GaN

Tristate Memory Cells Using Double-Peaked Fin-Array III-V Tunnel Diodes Monolithically Grown on (001) Silicon Substrates

Fully-integrated AMLED micro display system with a hybrid voltage regulator

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth

InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

InP/InGaAs nano-ridge array on exact (001) silicon substrate emitting at telecommunication wavelengths

Low leakage high breakdown GaN MOSHEMTs on Si with a ZrO₂ gate dielectric

Quantum dot lasers grown on (001) Si substrate for integration with amorphous Si waveguides

Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon

1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates

Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon

Design and characterization of active matrix LED microdisplays with embedded visible light communication transmitter

Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique

Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique

Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates with Room-Temperature Peak-to-Valley Current Ratio of 5.4

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays

Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode

Mastering the Marriage of III-Vs and Silicon

Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

Monolithic Integration of Tunnel Diode-Based Inverters on Exact (001) Si Substrates

Off-state drain leakage reduction by post metallization annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on Si

Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing

Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates

Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon

Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

Optimization of electrode structure for flip-chip HVLED via two-level metallization

Selectable Synthesis of 2-D MoS₂ and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding

1-μm InAs quantum dot micro-disk lasers directly grown on exact (001) Si

Efficient use of uniform GaN HVLEDs for small-flicker general illumination applications with converter-free LED drivers

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

High voltage low current collapse AlGaN/GaN MISHEMTs with in-situ SiN gate dielectric

Homogeneous and Heterogeneous Integration of GaN-based Light Emitting Diodes and Driving Transistors

InP Nanowire Arrays with Embedded InGaAs Quantum wells Grown on Patterned (001) Si Substrates

Investigation of the interface traps and current collapse in LPCVD SiN_x/AlGaN/GaN MISHEMTs

Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects

Multi-layer InAs/InAlGaAs quantum dots embedded into InP on Si (001) substrate for dislocation filtering

Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si

Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation

Switching Performance of Quasi-Vertical GaN-Based p-i-n Diodes on Si

Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device

Fabrication and characterization of gate-last self-aligned AlN/GaN MISHEMTs with in Situ SiN_x gate dielectric

GaN-based LED micro-displays for wearable applications

Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Hetero-epitaxy of L_g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

High-speed InGaAs photodetectors by selective-area MOCVD toward optoelectronic integrated circuits

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

InAlGaAs/InAlAs MQWs on Si substrate

InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μ m band

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

MOVPE growth of in situ SiN_x/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD

Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology

1.3 µm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition

A low substrate loss, monolithically integrated power inductor for compact LED drivers

An AMLED microdisplay driver SoC with built-in 1.25-Mb/s VLC transmitter

Buffer Structure Optimization of Monolithically Integrated HEMT-LED Using a Metal-Interconnection-Free Integration Scheme

Control of Threshold Voltage in Ultrathin-barrier AlGaN/GaN based MISHEMTs with Low-frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer

Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration

Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition

Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization

Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap

GaAs/In0.2Ga0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping

High Performance Field Effect Transistors Based on Large Area Mos₂ Thin Films

Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment

Off-state Drain Leakage Reduction by Post Metallization Annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on Silicon

Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA

Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films

Characterization of in situ SiN_x thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays

Enhancement-mode L_g = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with f_max surpassing 408 GHz

Growth and characterization of horizontal GaN wires on silicon

Growth of ultra-high mobility In_0.52Al_0.48As/In _xGa_1-xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition

High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer

In situ growth of SiN_xas gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition

In situ SiN_x gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si

L_g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n⁺-GaN layer by MOCVD

Low trap states in in situ SiN_x/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD

Performance enhancements of flip-chip light-emitting diodes with high-density n-type point-contacts

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si

Solid-state lighting with high brightness, high efficiency, and low cost

1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC

Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO₂ Patterned GaN/Si Templates

Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

High performance self-aligned AlN/GaN MISHEMT with in-situ SiN_x gate dielectric and regrown source/drain

High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate

III-V-IV integration toward electronics and photonics convergence on a silicon platform

Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications

Integration scheme toward LED system-on-a-chip (SoC)

LED on silicon (LEDoS) microdisplays

Monolithic integration of III-nitride LEDs and driver HEMT transistors by MOCVD

Monolithically integrated drivers for eco-friendly LED system-on-a-chip applications

Through silicon underfill dispensing for 3D die/interposer stacking

360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays

A GaN-based lamb-wave oscillator on silicon for high-temperature integrated sensors

A novel BLU-free full-color LED projector using LED on silicon micro-displays

A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays

DC and RF performance of gate-last AlN/GaN MOSHEMTs on Si with regrown source/drain

GaN-based S₀-wave sensors on silicon for chemical and biological sensing in liquid environments

High-performance green and yellow LEDs grown on SiO₂ nanorod patterned GaN/Si templates

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

Investigation of forward voltage uniformity in monolithic light-emitting diode arrays

Low leakage current and high-cutoff frequency AlGaN/GaN MOSHEMT using submicrometer-footprint thermal oxidized TiO₂/NiO as Gate Dielectric

Material and device characteristics of metamorphic In_0.53Ga _0.47As MOSHEMTs grown on GaAs and Si substrates by MOCVD

All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications

Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation

Blue, Green, and Yellow LEDs Grown on Si Substrates

Characteristics of submicron-footprint TiO₂ based AlGaN/GaN MOSHEMT on SiC substrate

Cost-effective and eco-friendly LED system-on-a-chip (SoC)

Effects of pre-annealed nickel contact layer on LED device performance using NI/AG-based p-type contacts

Enhancement-mode AlN/GaN MOSHEMTs fabricated by selective area regrowth of AlGaN barrier layer

GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application

30-nm inverted in _0.53Ga _0.47As MOSHEMTs on Si substrate grown by MOCVD with regrown source/drain

Effect of post-gate RTA on leakage current (I _off) in GaN MOSHEMTs

Enhancement-mode AlN/GaN MOSHFETs on Si substrate with regrown source/drain by MOCVD

Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

Fabrication of 100-nm metamorphic AlInAs/GaInAs HEMTs grown on Si substrates by MOCVD

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

High-performance inverted In _0.53Ga _0.47As MOSHEMTs on a GaAs substrate with regrown source/drain by MOCVD

High-speed normal-incidence p-i-n InGaAs photodetectors grown on silicon substrates by MOCVD

Improved crystalline quality and light output power of GaN-based light-emitting diodes grown on Si substrate by buffer optimization

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

In _0.53Ga _0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD

Inverted-type InGaAs metal-oxide-semiconductor high-electron-mobility transistor on Si substrate with maximum drain current exceeding 2A/mm

Low-leakage-current AlN/GaN MOSHFETs Using Al ₂O ₃ for increased 2DEG

Thermally activated pop-in and indentation size effects in GaN films

30nm enhancement-mode In_0.53Ga_0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance

A novel GaN-based monolithic SAW/HEMT oscillator on silicon

Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD

Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

ETB-QW InAs MOSFET with scaled body for improved electrostatics

Growth characteristics of AlGaN/GaN HEMTs on patterned Si (111) substrates using double AIN interlayers by MOCVD

Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD

High-performance AlN/GaN MOSHEMTs with regrown ohmic contacts by MOCVD

Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers

Improved resistivity of GaN with partially Mg-doped grown on Si (111) substrates by MOCVD

Inverted-type InAlAs/InGaAs MOSHEMT with regrown source/drain exhibiting high current and low on-resistance

Progress on the GaN-based LEDs and LDs

Resistivity control in unintentionally doped GaN films grown on Si (111) substrates by MOCVD

Silicon and hybrid silicon photodetectors for photonic integrated circuits

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition

Fabrication of 150-nm T-gate metamorphic Alinas/GaInAs HEMTs on GaAs substrates by MOCVD

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

Improved AlGaN/GaN HEMTs grown on Si substrates using stacked AlGaN/AlN interlayer by MOCVD

Material characteristics of InGaN based light emitting diodes grown on porous Si substrates

Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned si substrate

P-34: Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays

InAlAs/InGaAs metamorphic HEMT and MOS-HEMT with regrown Source/Drain by MOCVD

InGaAs MOS-HEMTs on Si substrates grown by MOCVD

InP lattice-matched HEMT with regrown source/drain by MOCVD

Metamorphic p-i-n InGaAs photodetectors grown by MOCVD

Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate

Determining phonon deformation potentials of hexagonal GaN with stress modulation

Effects of AlGaN/AlN stacked interlayers on GaN growth on Si (111)

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution

Transfer of GaN-based light-emitting diodes from silicon growth substrate to copper

0.3-μm gate-length metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD

Epitaxial growth of III-nitride LEDs on porous Si substrates

GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power

GaN-based lamb-wave mass-sensors on silicon substrates

Hetero-epitaxy of III-V compounds by MOCVD on silicon substrates

High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD

High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display

III-Nitride Devices on Silicon Substrates by MOCVD

III-Nitride LEDs Grown on Porous Si Substrtes

III-nitride LEDs on Si Substrates

Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD

In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition

In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD

Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates

MOCVD of Device Structures

Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD

Will LED on Si become Mainstream Technology

Will LED on Si Become Mainstream Technology?

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN _x mask layer by MOCVD

InP layer transfer with masked implantation

Microbridge tests on gallium nitride thin films

Monolithic LED microdisplay on active matrix substrate using flip-chip technology

GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power

GaN-based monolithic LED micro-arrays

Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications

III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display

Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO₂ nanorod-array patterned sapphire substrate

Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO ₂ nanorod-array patterned sapphire substrates by MOCVD

Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces

AlInAs/GalnAs mHEMTs on silicon substrates grown by MOCVD

Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse

GaN based active matrix light emitting diode array by flip-chip technology

High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD

Investigation of the natural degradation of green LEDs

Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD

Transient leakage current technique for MIS HEMT (A12O3/AlGaN/GaN) dielectric semiconductor interface property characterization

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTS

A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al_0.3Ga_0.7N/Al_0.05Ga _0.95N/GaN HEMTs

Cathodoluminescence study of InGaN/GaN quantum-Well LED structures grown on a Si substrate

Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes

DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Device isolation by plasma treatment for planar integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors

High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates

High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment

Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD

MMIC LNA based novel composite-channel Al_0.3Ga _0.7N/Al_0.05Ga_0.95N/GaNHEMTs

Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Surface acoustic wave device on AlGaNGaN heterostructure using two-dimensional electron gas interdigital transducers

Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF ₄ plasma treatment

Fabrication of position-controllable GaN nanostructures

Fabrication of vertical position-controllable GaN nanowires on (111) si substrate

GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching

Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse

Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure

Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch

Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage

Enhancement-mode Si₃N₄/A1GaNaN MISHFETs

Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS

Influence of oxidation and annealing temperatures on quality of Ga₂O₃ film grown on GaN

Isoelectronic indium-surfactant-doped Al_0.3Ga_0.7N/GaN high electron mobility transistors

Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF₄ plasma treatment

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits

Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes

Core Technologies for III-Nitride Integrated Microsensors

Effects of NO annealing on the characteristics of GaN MIS capacitor

Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique

GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC

Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

High-performance metamorphic InP/GaAsSb/InP "Type-II" DHBTs grown on GaAs substrates

MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment

SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures

AlGaN-GaN double-channel HEMTs

AlGaN-GaN HEMTs on patterned silicon (111) substrate

Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05 Ga_0.95N/GaN HEMTs

Comparison of blue and green InGaNGaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

Correlation of in-situ reflectance spectra and resistivity of GaN/Al ₂O₃ interfacial layer in metalorganic chemical vapor deposition

Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures

Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates

Enhanced-performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates

Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

Highly linear Al_0.3 Ga_0.7 N-Al_0.05 Ga_0.95 N-GaN composite-channel HEMTs

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Low-temperature scanning near-field optical microscope and spectroscopy: Application in quantum well device

Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy

Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

AlGaN/GaN HEMTs on Grooved Sapphire Substrate

Effects of oxidation temperature on Ga₂O₃ film thermally grown on GaN

GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS

GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/ GaN HEMTs

Monolithic integration of enhancement- And depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT

Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices

Al_0.10Ga_0.90As-GaAs microcoolers

Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN composite-channel HEMTs with enhanced linearity

Characterization of GaN grown on patterned Si(1 1 1) substrates

Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

Efficient wet etching of GaN and p-GaN assisted with chopped UV source

Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si₃N₄ surface-passivation-induced strain solidification

GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures

GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors

Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT

Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

AiGaAs superlattice microcoolers

AlGaN/GaN/Graded-AlGaN double heterostructure HEMT

Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs

Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors

OMVPE growth of p-type GaN using solution Cp₂Mg

Study of Schottky barrier of Ni on p-GaN

Characterization of a novel GaAs-based microwave optical switch

Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers

Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells

Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures

Dependence of polarization mode and threshold current on tensile strain in AIGaAs/GaAsP quantum well lasers

Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells

Exciton dynamics and spin-flip in tensile strained quantum wells

Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers

Tensile-strained barrier GaAsP/GaAs single quantum-well lasers

High-Performance 770-nm AlGaAs—GaAsP Tensile-Strained Quantum-Well Laser Diodes

Resonant Tunneling Injection Quantum-Well Lasers

Valence band offsets in strained GaAs_1-xP_x/GaAs heterojunctions

Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

GaAS1-xPx/GaAs Quantum-Well Structures with Tensile-Strained Barriers

Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy

Enhanced stimulated emission of excited states in quantum wells by resonant tunneling

Tensile-strained AlGaAs/GaAsP single quantum-well lasers

Analysis of Slow-Wave Transmission Lines on Multi-Layered Semiconductor Structures Including Conductor Loss

Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells

Field-induced absorption edge merging in tensile strained GaAsP quantum wells

Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements

High-Quality Two-Dimensional Electron Gas in Al_xGa_{1 – x}As/GaAs Heterostructures by LP-OMVPE

Ultrahigh mobility two-dimensional electron gas in Al_xGa _1-xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Valence-band-shape modification due to band coupling in strained quantum wells

Wide-Bandwidth Electron Bolometric Mixers: A 2DEG Prototype and Potential for Low-Noise THz Receivers

Exciton dynamics in 121Å GaAs and GaAsP QWs: Having different valence band structures arising from built-in biaxial stress

Exciton trapping in strained GaAsP quantum wells

Magneto-optical properties of quantum wells under biaxial tensile strain

Optically Pumped Submillimeter Wave Semiconductor Lasers

Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

2DEG electron bolometric mixers: new results and potential for low-noise THz receivers

Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Patterned substrate epitaxy surface shapes

Two-dimensional electron gas hot-electron mixers for millimeter waves and submillimeter waves

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

High mobility hot electron mixers for millimeter waves and submillimeter waves

Solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media

Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs

Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells

In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy

Nondestructive characterization of MOCVD-Grown GaInAs/GaAs using rocking curve and topography

Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition

Saturation of light- and heavy-hole exciton energies in very narrow quantum wells

Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Temperature Dependence and Persistent Conductivity of GaAs MESFET's with Superlattice Buffers

Temperature stability of Al_xGa_1-xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy

Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

Mobility Profiling of GaAs Power FET's by Magnetotransconjuctance Measurements

Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells

Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide Masks

Selective epitaxy of quantum well structures by atmospheric pressure OMCVD

Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures

A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition

IVA-3 Parasitic Corrections for Mobility Profiling of Large-Periphery GaAs Power FET's

ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS.

RELATIONSHIP OF MAGNETOTRANSCONDUCTANCE MOBILITY PROFILES AND RF PERFORMANCE OF GAAS FETS.

Uniform Deposition of GaAs in a Multiwafer Vapor-Phase Epitaxial System

Screw-fastened joints for thermal contact at low temperatures

1.55-μm Lasers Epitaxially Grown on Silicon

Article

Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers

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Broadband telecom emission from InP/InGaAs nano-ridge lasers on silicon-on-insulator substrate

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Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

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Electrically injected 1.64µm emitting In_0.65Ga_0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

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Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si

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Exciton aggregation induced photoluminescence enhancement of monolayer WS₂

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High-Voltage p-GaN HEMTs with OFF-State Blocking Capability after Gate Breakdown

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III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

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Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

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Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators

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Selective lateral epitaxy of dislocation-free InP on silicon-on-insulator

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Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes

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Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

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Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator

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Growth of III–V semiconductors and lasers on silicon substrates by MOCVD

Book chapter

Active Matrix Monolithic Full-Color LED Micro Display

Conference paper

Active matrix monolithic full-color LED micro-display

Conference paper

Characteristics of 1.3μm Electrically Pumped InAs/AlGaInAs Quantum Dot Lasers on (001) Silicon

Conference paper

Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate

Conference paper

Electrically Injected 1.64 μm-emitting In_0.65Ga_0.35As 3-QW Laser Diodes Grown on Mismatched Substrates by MOVPE

Conference paper

High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure

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III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration

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III-V Lasers Emitting at 1.3 to 1.5 \mu \mathrm{m} Grown on (001) Silicon by MOCVD (Invited)

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III-V Lasers Emitting at 1.3 to 1.5 μm grown on (001) silicon by MOCVD (invited)

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Integrated electrically-pumped quantum-dot micro-lasers with tunable single-mode operation

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Mechanism of wavelength tuning over 200 nm range from InP/InGaAs nano-lasers grown on SOI

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Micro-LED displays: Can the monolithic approach produce full-color?

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Monolithic full-color LED micro-display using dual wavelength LED epi-layers

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Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm

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Monolithic micro-LED full-color micro-displays

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Monolithic μ-LED Full-Color Micro-Displays

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Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si

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Room-Temperature Electrically Pumped InP-based 1.3μm Quantum Dot Laser on On-axis (001) Silicon

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Telecom III-V Nano-Lasers with Distributed Bragg Reflectors Grown on (001) Silicon-on-Insulators

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Triple reduction of threshold current for 1.3μm in as quantum dot lasers on patterned, on-axis (001) Si

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Vertical Schottky Barrier Diodes Based on a Bulk β-Ga₂O₃ Substrate With High Switching Performance

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1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon

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A Novel 700 v Monolithically Integrated Si-GaN Cascoded Field Effect Transistor

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An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver with GaN FETs and Fully Integrated LED Shunt Protectors

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Chemical vapor deposited monolayer MoS₂ top-gate MOSFET with atomic-layer-deposited ZrO₂ as gate dielectric

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Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiN_x by low pressure chemical vapor deposition

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Enhancement-Mode GaN MOS-HEMTs with Recess-Free Barrier Engineering and High-k ZrO₂ Gate Dielectric

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Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

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GaAs solar cells on nanopatterned Si substrates

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Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (0 0 1) substrates

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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO₂ Gate Dielectric

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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

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Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

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Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS₂ and InGaN Quantum Dots

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GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth

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1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

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Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB

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Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

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Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon

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Optimization of electrode structure for flip-chip HVLED via two-level metallization

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Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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Efficient use of uniform GaN HVLEDs for small-flicker general illumination applications with converter-free LED drivers

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High voltage low current collapse AlGaN/GaN MISHEMTs with in-situ SiN gate dielectric

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Conference paper

Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects

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Conference paper

Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si

Conference paper

Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation

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MOVPE growth of in situ SiN_x/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

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Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD

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An AMLED microdisplay driver SoC with built-in 1.25-Mb/s VLC transmitter

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Conference paper

Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration

Conference paper

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Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment

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Off-state Drain Leakage Reduction by Post Metallization Annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on Silicon

Conference paper

Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA

Conference paper

Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films

Conference paper

Characterization of in situ SiN_x thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

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Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays

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In situ growth of SiN_xas gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition

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In situ SiN_x gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si

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Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

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Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO₂ Patterned GaN/Si Templates

Conference paper

Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

Conference paper

High performance self-aligned AlN/GaN MISHEMT with in-situ SiN_x gate dielectric and regrown source/drain

Conference paper

High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate

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Conference paper

Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications

Conference paper

Integration scheme toward LED system-on-a-chip (SoC)

Conference paper

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Conference paper

Monolithic integration of III-nitride LEDs and driver HEMT transistors by MOCVD

Conference paper

Monolithically integrated drivers for eco-friendly LED system-on-a-chip applications

Conference paper

Through silicon underfill dispensing for 3D die/interposer stacking

Conference paper

360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays

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A GaN-based lamb-wave oscillator on silicon for high-temperature integrated sensors

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A novel BLU-free full-color LED projector using LED on silicon micro-displays

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A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays

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DC and RF performance of gate-last AlN/GaN MOSHEMTs on Si with regrown source/drain

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GaN-based S₀-wave sensors on silicon for chemical and biological sensing in liquid environments

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High-performance green and yellow LEDs grown on SiO₂ nanorod patterned GaN/Si templates

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Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

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Investigation of forward voltage uniformity in monolithic light-emitting diode arrays

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Low leakage current and high-cutoff frequency AlGaN/GaN MOSHEMT using submicrometer-footprint thermal oxidized TiO₂/NiO as Gate Dielectric

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Material and device characteristics of metamorphic In_0.53Ga _0.47As MOSHEMTs grown on GaAs and Si substrates by MOCVD

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All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications

Conference paper

Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation

Conference paper

Blue, Green, and Yellow LEDs Grown on Si Substrates

Conference paper

Characteristics of submicron-footprint TiO₂ based AlGaN/GaN MOSHEMT on SiC substrate

Conference paper

Cost-effective and eco-friendly LED system-on-a-chip (SoC)

Conference paper

Effects of pre-annealed nickel contact layer on LED device performance using NI/AG-based p-type contacts

Conference paper

Enhancement-mode AlN/GaN MOSHEMTs fabricated by selective area regrowth of AlGaN barrier layer

Conference paper

GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application

Conference paper

30-nm inverted in _0.53Ga _0.47As MOSHEMTs on Si substrate grown by MOCVD with regrown source/drain

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Effect of post-gate RTA on leakage current (I _off) in GaN MOSHEMTs

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Enhancement-mode AlN/GaN MOSHFETs on Si substrate with regrown source/drain by MOCVD

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Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

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Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

Article

Fabrication of 100-nm metamorphic AlInAs/GaInAs HEMTs grown on Si substrates by MOCVD

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High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

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High-performance inverted In _0.53Ga _0.47As MOSHEMTs on a GaAs substrate with regrown source/drain by MOCVD

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High-speed normal-incidence p-i-n InGaAs photodetectors grown on silicon substrates by MOCVD

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Improved crystalline quality and light output power of GaN-based light-emitting diodes grown on Si substrate by buffer optimization

Article

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

Article

In _0.53Ga _0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD

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Inverted-type InGaAs metal-oxide-semiconductor high-electron-mobility transistor on Si substrate with maximum drain current exceeding 2A/mm

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Low-leakage-current AlN/GaN MOSHFETs Using Al ₂O ₃ for increased 2DEG

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Thermally activated pop-in and indentation size effects in GaN films

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30nm enhancement-mode In_0.53Ga_0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance

Conference paper

A novel GaN-based monolithic SAW/HEMT oscillator on silicon

Conference paper

Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD

Conference paper

Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

Conference paper

ETB-QW InAs MOSFET with scaled body for improved electrostatics

Conference paper

Growth characteristics of AlGaN/GaN HEMTs on patterned Si (111) substrates using double AIN interlayers by MOCVD

Conference paper

Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD

Conference paper

High-performance AlN/GaN MOSHEMTs with regrown ohmic contacts by MOCVD

Conference paper

Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers

Conference paper

Improved resistivity of GaN with partially Mg-doped grown on Si (111) substrates by MOCVD

Conference paper

Inverted-type InAlAs/InGaAs MOSHEMT with regrown source/drain exhibiting high current and low on-resistance

Conference paper

Progress on the GaN-based LEDs and LDs

Conference paper

Resistivity control in unintentionally doped GaN films grown on Si (111) substrates by MOCVD

Conference paper

Silicon and hybrid silicon photodetectors for photonic integrated circuits

Conference paper

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition

Article

Fabrication of 150-nm T-gate metamorphic Alinas/GaInAs HEMTs on GaAs substrates by MOCVD

Article

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

Article

Improved AlGaN/GaN HEMTs grown on Si substrates using stacked AlGaN/AlN interlayer by MOCVD

Article

Material characteristics of InGaN based light emitting diodes grown on porous Si substrates

Article

Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD

Article

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned si substrate

Article

P-34: Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays

Article

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper

Article

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Article

Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays

Conference paper

InAlAs/InGaAs metamorphic HEMT and MOS-HEMT with regrown Source/Drain by MOCVD

Conference paper

InGaAs MOS-HEMTs on Si substrates grown by MOCVD

Conference paper

InP lattice-matched HEMT with regrown source/drain by MOCVD

Conference paper

Metamorphic p-i-n InGaAs photodetectors grown by MOCVD

Conference paper

Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate

Conference paper

Determining phonon deformation potentials of hexagonal GaN with stress modulation

Article

Effects of AlGaN/AlN stacked interlayers on GaN growth on Si (111)

Article

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

Article

InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

Article

Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution

Article

Transfer of GaN-based light-emitting diodes from silicon growth substrate to copper

Article

0.3-μm gate-length metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD

Conference paper

Epitaxial growth of III-nitride LEDs on porous Si substrates

Conference paper

GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power

Conference paper

GaN-based lamb-wave mass-sensors on silicon substrates

Conference paper

Hetero-epitaxy of III-V compounds by MOCVD on silicon substrates

Conference paper

High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD

Conference paper

High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display

Conference paper

III-Nitride Devices on Silicon Substrates by MOCVD

Conference paper

III-Nitride LEDs Grown on Porous Si Substrtes

Conference paper

III-nitride LEDs on Si Substrates

Conference paper

Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD

Conference paper

In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition

Conference paper

In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD

Conference paper

Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates

Conference paper

MOCVD of Device Structures

Conference paper

Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD

Conference paper

Will LED on Si become Mainstream Technology

Conference paper

Will LED on Si Become Mainstream Technology?

Conference paper

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

Article

HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice

Article

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN _x mask layer by MOCVD

Article

InP layer transfer with masked implantation

Article

Microbridge tests on gallium nitride thin films

Article

Monolithic LED microdisplay on active matrix substrate using flip-chip technology

Article

GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power

Conference paper

GaN-based monolithic LED micro-arrays

Conference paper

Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications

Conference paper

III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display

Conference paper

Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

Conference paper

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

Article

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO₂ nanorod-array patterned sapphire substrate

Article

Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO ₂ nanorod-array patterned sapphire substrates by MOCVD

Article

Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates

Article

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Article

Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD

Article

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

Article

Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces

Article

AlInAs/GalnAs mHEMTs on silicon substrates grown by MOCVD

Conference paper

Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse

Conference paper

GaN based active matrix light emitting diode array by flip-chip technology

Conference paper

High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD

Conference paper

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD

Conference paper

Investigation of the natural degradation of green LEDs

Conference paper

Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD

Conference paper

Transient leakage current technique for MIS HEMT (A12O3/AlGaN/GaN) dielectric semiconductor interface property characterization

Conference paper

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTS

Article

A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al_0.3Ga_0.7N/Al_0.05Ga _0.95N/GaN HEMTs

Article

Cathodoluminescence study of InGaN/GaN quantum-Well LED structures grown on a Si substrate

Article

Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes

Article

DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Article

Device isolation by plasma treatment for planar integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors

Article

High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates

Article

High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

Article

Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment

Article

Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD

Article

MMIC LNA based novel composite-channel Al_0.3Ga _0.7N/Al_0.05Ga_0.95N/GaNHEMTs

Article

Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

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Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

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Surface acoustic wave device on AlGaNGaN heterostructure using two-dimensional electron gas interdigital transducers

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Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate

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Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF ₄ plasma treatment

Conference paper

Fabrication of position-controllable GaN nanostructures

Conference paper

Fabrication of vertical position-controllable GaN nanowires on (111) si substrate

Conference paper

GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching

Conference paper

Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs

Conference paper

Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Conference paper

Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse

Conference paper

Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure

Conference paper

Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Conference paper

Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure

Conference paper

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

Article

AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch

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Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

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Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

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Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

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Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage

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Enhancement-mode Si₃N₄/A1GaNaN MISHFETs

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Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

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GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS

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Influence of oxidation and annealing temperatures on quality of Ga₂O₃ film grown on GaN

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Isoelectronic indium-surfactant-doped Al_0.3Ga_0.7N/GaN high electron mobility transistors

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Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF₄ plasma treatment

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Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Article

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits

Conference paper

Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes

Conference paper

Core Technologies for III-Nitride Integrated Microsensors

Conference paper

Effects of NO annealing on the characteristics of GaN MIS capacitor

Conference paper

Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique

Conference paper

GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC

Conference paper

Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

Conference paper

High-performance metamorphic InP/GaAsSb/InP "Type-II" DHBTs grown on GaAs substrates

Conference paper

MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

Conference paper

Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment

Conference paper

SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures

Conference paper

AlGaN-GaN double-channel HEMTs

Article

AlGaN-GaN HEMTs on patterned silicon (111) substrate

Article

Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05 Ga_0.95N/GaN HEMTs

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Comparison of blue and green InGaNGaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

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Correlation of in-situ reflectance spectra and resistivity of GaN/Al ₂O₃ interfacial layer in metalorganic chemical vapor deposition

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Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures

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Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates

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Enhanced-performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates

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Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

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Highly linear Al_0.3 Ga_0.7 N-Al_0.05 Ga_0.95 N-GaN composite-channel HEMTs

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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

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III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

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Low-temperature scanning near-field optical microscope and spectroscopy: Application in quantum well device

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Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition

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Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

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Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy

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Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices

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A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

Conference paper

AlGaN/GaN HEMTs on Grooved Sapphire Substrate

Conference paper

Effects of oxidation temperature on Ga₂O₃ film thermally grown on GaN

Conference paper

GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS

Conference paper

GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors

Conference paper

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/ GaN HEMTs

Conference paper

Monolithic integration of enhancement- And depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Conference paper

Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT

Conference paper

Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Conference paper

Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices

Conference paper

Al_0.10Ga_0.90As-GaAs microcoolers

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Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN composite-channel HEMTs with enhanced linearity

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Characterization of GaN grown on patterned Si(1 1 1) substrates

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Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

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Efficient wet etching of GaN and p-GaN assisted with chopped UV source

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Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si₃N₄ surface-passivation-induced strain solidification

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GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

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GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy

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Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Article

Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures

Conference paper

GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors

Conference paper

Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT

Conference paper

Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence

Conference paper

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

Article

AiGaAs superlattice microcoolers

Article

AlGaN/GaN/Graded-AlGaN double heterostructure HEMT

Conference paper

Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs

Conference paper

Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors

Conference paper

OMVPE growth of p-type GaN using solution Cp₂Mg

Article

Study of Schottky barrier of Ni on p-GaN

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Characterization of a novel GaAs-based microwave optical switch

Conference paper

Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers

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Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells

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Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures

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Dependence of polarization mode and threshold current on tensile strain in AIGaAs/GaAsP quantum well lasers

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Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

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Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells

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Exciton dynamics and spin-flip in tensile strained quantum wells

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Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

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Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers

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Tensile-strained barrier GaAsP/GaAs single quantum-well lasers

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High-Performance 770-nm AlGaAs—GaAsP Tensile-Strained Quantum-Well Laser Diodes

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Resonant Tunneling Injection Quantum-Well Lasers

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Valence band offsets in strained GaAs_1-xP_x/GaAs heterojunctions

Article

Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

Conference paper

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

Article

GaAS1-xPx/GaAs Quantum-Well Structures with Tensile-Strained Barriers

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Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy

Article

Enhanced stimulated emission of excited states in quantum wells by resonant tunneling

Conference paper

Tensile-strained AlGaAs/GaAsP single quantum-well lasers

Conference paper

Analysis of Slow-Wave Transmission Lines on Multi-Layered Semiconductor Structures Including Conductor Loss

Article

Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells

Article

Field-induced absorption edge merging in tensile strained GaAsP quantum wells

Article

Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements

Article

High-Quality Two-Dimensional Electron Gas in Al_xGa_{1 – x}As/GaAs Heterostructures by LP-OMVPE

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Ultrahigh mobility two-dimensional electron gas in Al_xGa _1-xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Article

Valence-band-shape modification due to band coupling in strained quantum wells

Article

Wide-Bandwidth Electron Bolometric Mixers: A 2DEG Prototype and Potential for Low-Noise THz Receivers

Article

Exciton dynamics in 121Å GaAs and GaAsP QWs: Having different valence band structures arising from built-in biaxial stress

Article

Exciton trapping in strained GaAsP quantum wells

Article

Magneto-optical properties of quantum wells under biaxial tensile strain

Article

Optically Pumped Submillimeter Wave Semiconductor Lasers

Article

Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

Article

2DEG electron bolometric mixers: new results and potential for low-noise THz receivers

Conference paper

Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Article

Patterned substrate epitaxy surface shapes

Article

Two-dimensional electron gas hot-electron mixers for millimeter waves and submillimeter waves

Article

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Article

High mobility hot electron mixers for millimeter waves and submillimeter waves

Article

Solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media

Article

Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs

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Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells

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In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy

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Nondestructive characterization of MOCVD-Grown GaInAs/GaAs using rocking curve and topography

Article

Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition

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Saturation of light- and heavy-hole exciton energies in very narrow quantum wells

Article

Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Article

Temperature Dependence and Persistent Conductivity of GaAs MESFET's with Superlattice Buffers

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Temperature stability of Al_xGa_1-xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy

Article

Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems

Conference paper

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

Article

Mobility Profiling of GaAs Power FET's by Magnetotransconjuctance Measurements

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Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells

Article

Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide Masks

Article

Selective epitaxy of quantum well structures by atmospheric pressure OMCVD

Article

Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures

Article

A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition

Article

IVA-3 Parasitic Corrections for Mobility Profiling of Large-Periphery GaAs Power FET's

Article

ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS.

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RELATIONSHIP OF MAGNETOTRANSCONDUCTANCE MOBILITY PROFILES AND RF PERFORMANCE OF GAAS FETS.

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Uniform Deposition of GaAs in a Multiwafer Vapor-Phase Epitaxial System

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Screw-fastened joints for thermal contact at low temperatures

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