A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET

Article

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs

Article

Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Article

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

Article

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs With a Low-Voltage GaN HEMT in a Cascode Configuration

Article

Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

Article

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

Article

3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation

Conference paper

A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on Suppression and Gate Reliability Enhancement of SiC MOSFETs

Conference paper

Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress

Conference paper

Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT

Article

Static and Dynamic Characteristics of a 1200-V/22 -mΩ Normally-Off SiC/GaN Cascode Device Built With Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Article

Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type p-GaN Gate HEMTs

Conference paper

Protection of SiC MOSFET from Negative Gate Voltage Spikes with a Low-Voltage GaN HEMT

Conference paper

Suppressing the Reverse Recovery of Si Super-Junction MOSFET with a Low-Voltage GaN HEMT in a Cascode Configuration

Conference paper

650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications

Article

Gate Reliability of Schottky-Type p-GaN Gate HEMTs under AC Positive Gate Bias Stress with a Switching Drain Bias

Article

Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs

Article

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

Article

Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs

Conference paper

Correlation between Pulse I-V Tests and Human Body Model (HBM) Electrostatic Discharge (ESD) Tests for GaN HEMTs

Conference paper

Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation

Conference paper

Gallium nitride-based complementary logic integrated circuits

Article

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

Article

Short Circuit Capability Characterization and Analysis of P-GaN Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Article

Threshold Voltage Instability Of Enhancement-Mode GaN Buried p-Channel MOSFETs

Article

Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs

Conference paper

A Normally-_OFF Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Article

High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Article

Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests

Conference paper

Dv/Dt-control of 1200-V Co-packaged SiC-JFET/GaN-HEMT Cascode Device

Conference paper

Short Circuit Capability and Short Circuit Induced V_TH Instability of a 1.2kV SiC Power MOSFET

Article

Repetitive Short Circuit Energy Dependent V_TH Instability of 1.2kV SiC Power MOSFETs

Conference paper

Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature

Conference paper

Short circuit capability and high temperature channel mobility of SiC MOSFETs

Conference paper

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Conference paper